Infineon Technologies CY7C1423KV18-300BZXCT
- Part No.:
- CY7C1423KV18-300BZXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1423KV18-300BZXCT.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,702
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1423KV18-300BZXCT from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II SIO synchronous SRAM with two-word burst architecture, 300 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It supports 1.5-cycle read latency (DOFF = HIGH) or 1-cycle latency (DOFF = LOW), and features echo clocks CQ/CQ for simplified high-speed data capture in networking and packet buffering systems.
For engineers reviewing the CY7C1423KV18-300BZXCT datasheet, CY7C1423KV18-300BZXCT pinout, CY7C1423KV18-300BZXCT application, or CY7C1423KV18-300BZXCT equivalent, key selection criteria include DDR II SIO timing compliance, dual-clock domain support (K/K and C/C), programmable output impedance via ZQ, and FBGA-165 package compatibility with high-density memory subsystem layouts.
Technical Context
This SRAM implements a pipelined, synchronous architecture with physically separate read and write ports-eliminating bus turnaround delays. It uses rising edges of complementary K/K clocks to latch addresses and write data, and rising edges of C/C clocks (or K/K in single-clock mode) to drive read data, enabling precise DDR timing control.
The device integrates a PLL for accurate data placement, JTAG 1149.1 test access, and on-chip self-timed write circuitry. Echo clocks CQ/CQ are phase-aligned to C/C and referenced to output data Q[17:0], allowing controller-side deskewing without per-device delay calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 300 MHz - defines maximum sustained bandwidth of 1.2 GB/s (DDR, 36-bit effective width) |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth and controller scheduling |
| Core Supply | 1.8 V ± 0.1 V - powers internal logic and PLL; requires low-noise regulation |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V memory interfaces |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - enables high-pin-count routing with controlled impedance and thermal dissipation |
| Output Impedance Control | ZQ pin calibrates Q[17:0] and CQ/CQ outputs to 0.2 × RQ - matches system trace impedance without external termination resistors |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous data input | Latched on rising edges of both K and K; supports full 18-bit parallel writes per burst |
| Q[17:0] | Synchronous data output | Driven on rising edges of C/C (or K/K); aligned with echo clocks CQ/CQ for deterministic capture |
| K / K | Input clock pair | Rising edges sample address, R/W, LD, BWS; define all synchronous input timing references |
| C / C | Output clock pair | Rising edges gate read data output; used with CQ/CQ to compensate for board flight-time skew |
| CQ / CQ | Echo clock outputs | Free-running, phase-synchronized to C/C; provide controller with timing reference for Q[17:0] sampling |
| ZQ | Impedance calibration input | Connects to external resistor to ground; sets output driver strength to match PCB trace impedance |
| DOFF | Read latency mode select | HIGH → 1.5-cycle latency; LOW → 1-cycle latency; configures internal pipeline behavior at power-up |
| BWS[1:0] | Byte write select | Active-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| DDR II Separate I/O Architecture | Eliminates bidirectional bus turnaround delay by dedicating D[17:0] to writes and Q[17:0] to reads |
| Two-Word Burst Access | Each address fetch delivers two consecutive 18-bit words in one clock period - doubles effective throughput vs. single-word SRAM |
| Programmable Output Impedance (ZQ) | Calibrates Q[17:0] and CQ/CQ drivers to 0.2 × RQ - removes need for external series termination resistors |
| Phase-Locked Loop (PLL) | Stabilizes internal timing for consistent data placement across voltage/temperature - critical for >250 MHz operation |
| JTAG 1149.1 Test Access Port | Enables boundary scan testing and in-system programming without dedicated test pads or probes |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/Layer 3 switches operating at 10 Gbps line rates. IC Role / Device Role / Timing Role: Dedicated burst-access SRAM serving as first-level buffer between MAC and switching fabric, synchronized to switch ASIC's DDR clock domain. Use Value: Two-word burst + DDR II SIO delivers 1.2 GB/s bandwidth at 300 MHz, matching ASIC interface requirements while minimizing latency jitter via CQ/CQ echo clocks. |
Use Scenario: Holding forwarding tables and queue state in modular chassis-based routers with distributed line cards. IC Role / Device Role / Timing Role: High-reliability, low-latency memory node in multi-SRAM depth-expanded banks, interfaced via differential K/K and C/C clocks. Use Value: ZQ-calibrated outputs ensure signal integrity across 10+ inch backplane traces; DOFF-selectable latency allows tuning to fabric scheduler constraints. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation results in 4G/5G baseband units. IC Role / Device Role / Timing Role: Synchronous burst SRAM tightly coupled to FPGA-based DSP engine, using C/C clocks for deterministic read alignment. Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides stable timing margin under PVT variation; HSTL I/O ensures compatibility with Xilinx Ultrascale+ memory controllers. |
Use Scenario: Storing high-resolution digital stimulus and expected response patterns in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic, low-jitter memory element in pattern generation path, where echo clocks CQ/CQ eliminate setup/hold uncertainty at comparator inputs. Use Value: Self-timed writes guarantee consistent write completion time; JTAG support enables in-system verification of stored patterns pre-test execution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C336200B-300BIN | 36-Mbit (2M × 18), 300 MHz, but uses common I/O (not SIO) and lacks echo clocks CQ/CQ | Requires bus turnaround management; unsuitable for systems needing simultaneous read/write concurrency | Select only if DDR II SIO and echo clock functionality are not required and cost is primary constraint |
| IS61WV102418BLL-300TQLI | 18-Mbit (512K × 36), 300 MHz, single-ended LVCMOS I/O, no ZQ calibration or PLL | Lower density, no DDR II timing support, limited to ≤200 MHz reliable operation in high-noise environments | Consider only for legacy designs migrating from older SRAMs where footprint change is acceptable and bandwidth demand is ≤600 MB/s |
Compared with AS7C336200B-300BIN and IS61WV102418BLL-300TQLI, CY7C1423KV18-300BZXCT uniquely delivers concurrent read/write via separate I/O, echo-clock–assisted data capture, and on-die impedance tuning - essential for deterministic 1.2 GB/s operation in modern packet-processing hardware.
Availability
CY7C1423KV18-300BZXCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C1423KV18-300BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and test equipment where bus turnaround overhead and timing uncertainty must be eliminated.
FAQ
What is the function of the DOFF pin on CY7C1423KV18-300BZXCT?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin under voltage/temperature variation; when LOW, it configures 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and latched internally - no runtime reconfiguration is supported.
Can CY7C1423KV18-300BZXCT operate with only K and K clocks, without C and C?
Yes - in single-clock mode, the device uses K and K to drive both input sampling and output data (Q[17:0]), eliminating the need for separate C/C clocks. However, echo clocks CQ/CQ remain active and synchronized to K/K, preserving their utility for timing reference even without dedicated output clocks.
How does ZQ pin calibration affect signal integrity in high-speed designs?
ZQ calibration adjusts the output driver strength of Q[17:0] and CQ/CQ pins to match the characteristic impedance of the PCB trace (typically 50 Ω). By connecting an external resistor RQ to ground, the device sets its output impedance to 0.2 × RQ - e.g., 25 Ω for 125 Ω RQ - reducing reflections and improving eye diagram margins at 600 Mbps per pin.
Is CY7C1423KV18-300BZXCT pin-compatible with CY7C1423KV18-333BZXCT?
Yes - both share identical 165-ball FBGA package (13 × 15 × 1.4 mm), identical pinout, and identical electrical interface. The -300 and -333 suffixes denote maximum rated clock frequencies (300 MHz vs. 333 MHz); the -300 variant meets all timing specifications up to 300 MHz and may operate reliably at lower frequencies with relaxed timing margins.
CY7C1423KV18-300BZXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1423KV18-300BZXCT FAQ
1.How can I place an order for CY7C1423KV18-300BZXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1423KV18-300BZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1423KV18-300BZXCT reliable?
The price and inventory of CY7C1423KV18-300BZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1423KV18-300BZXCT is usually 5 days.
3.What payment methods are accepted for CY7C1423KV18-300BZXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1423KV18-300BZXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1423KV18-300BZXCT?
CY7C1423KV18-300BZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1423KV18-300BZXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1423KV18-300BZXCT?
For technical support, including CY7C1423KV18-300BZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1423KV18-300BZXCT requirements.
6.How does Aetrix verify that CY7C1423KV18-300BZXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1423KV18-300BZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1423KV18-300BZXCT meets industry standards.
7.What is the process for return or replacement of CY7C1423KV18-300BZXCT?
All CY7C1423KV18-300BZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1423KV18-300BZXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1423KV18-300BZXCT part is unused and in its original packaging.
Return procedure for CY7C1423KV18-300BZXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1423KV18-300BZXCT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

