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Infineon Technologies CY7C1423KV18-300BZXCT

Part No.:
CY7C1423KV18-300BZXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1423KV18-300BZXCT.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,702

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Product details

Overview

CY7C1423KV18-300BZXCT from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II SIO synchronous SRAM with two-word burst architecture, 300 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It supports 1.5-cycle read latency (DOFF = HIGH) or 1-cycle latency (DOFF = LOW), and features echo clocks CQ/CQ for simplified high-speed data capture in networking and packet buffering systems.

For engineers reviewing the CY7C1423KV18-300BZXCT datasheet, CY7C1423KV18-300BZXCT pinout, CY7C1423KV18-300BZXCT application, or CY7C1423KV18-300BZXCT equivalent, key selection criteria include DDR II SIO timing compliance, dual-clock domain support (K/K and C/C), programmable output impedance via ZQ, and FBGA-165 package compatibility with high-density memory subsystem layouts.

Technical Context

This SRAM implements a pipelined, synchronous architecture with physically separate read and write ports-eliminating bus turnaround delays. It uses rising edges of complementary K/K clocks to latch addresses and write data, and rising edges of C/C clocks (or K/K in single-clock mode) to drive read data, enabling precise DDR timing control.

The device integrates a PLL for accurate data placement, JTAG 1149.1 test access, and on-chip self-timed write circuitry. Echo clocks CQ/CQ are phase-aligned to C/C and referenced to output data Q[17:0], allowing controller-side deskewing without per-device delay calibration.

Key Specifications

Parameter Value and Actual Design Meaning
Density 36 Mbit (2M × 18 configuration)
Max Clock Frequency 300 MHz - defines maximum sustained bandwidth of 1.2 GB/s (DDR, 36-bit effective width)
Read Latency 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth and controller scheduling
Core Supply 1.8 V ± 0.1 V - powers internal logic and PLL; requires low-noise regulation
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V memory interfaces
Package 165-ball FBGA (13 × 15 × 1.4 mm) - enables high-pin-count routing with controlled impedance and thermal dissipation
Output Impedance Control ZQ pin calibrates Q[17:0] and CQ/CQ outputs to 0.2 × RQ - matches system trace impedance without external termination resistors

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous data input Latched on rising edges of both K and K; supports full 18-bit parallel writes per burst
Q[17:0] Synchronous data output Driven on rising edges of C/C (or K/K); aligned with echo clocks CQ/CQ for deterministic capture
K / K Input clock pair Rising edges sample address, R/W, LD, BWS; define all synchronous input timing references
C / C Output clock pair Rising edges gate read data output; used with CQ/CQ to compensate for board flight-time skew
CQ / CQ Echo clock outputs Free-running, phase-synchronized to C/C; provide controller with timing reference for Q[17:0] sampling
ZQ Impedance calibration input Connects to external resistor to ground; sets output driver strength to match PCB trace impedance
DOFF Read latency mode select HIGH → 1.5-cycle latency; LOW → 1-cycle latency; configures internal pipeline behavior at power-up
BWS[1:0] Byte write select Active-low controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write

Key Features

Feature Design Value
DDR II Separate I/O Architecture Eliminates bidirectional bus turnaround delay by dedicating D[17:0] to writes and Q[17:0] to reads
Two-Word Burst Access Each address fetch delivers two consecutive 18-bit words in one clock period - doubles effective throughput vs. single-word SRAM
Programmable Output Impedance (ZQ) Calibrates Q[17:0] and CQ/CQ drivers to 0.2 × RQ - removes need for external series termination resistors
Phase-Locked Loop (PLL) Stabilizes internal timing for consistent data placement across voltage/temperature - critical for >250 MHz operation
JTAG 1149.1 Test Access Port Enables boundary scan testing and in-system programming without dedicated test pads or probes

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/Layer 3 switches operating at 10 Gbps line rates.

IC Role / Device Role / Timing Role: Dedicated burst-access SRAM serving as first-level buffer between MAC and switching fabric, synchronized to switch ASIC's DDR clock domain.

Use Value: Two-word burst + DDR II SIO delivers 1.2 GB/s bandwidth at 300 MHz, matching ASIC interface requirements while minimizing latency jitter via CQ/CQ echo clocks.

Use Scenario: Holding forwarding tables and queue state in modular chassis-based routers with distributed line cards.

IC Role / Device Role / Timing Role: High-reliability, low-latency memory node in multi-SRAM depth-expanded banks, interfaced via differential K/K and C/C clocks.

Use Value: ZQ-calibrated outputs ensure signal integrity across 10+ inch backplane traces; DOFF-selectable latency allows tuning to fabric scheduler constraints.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation results in 4G/5G baseband units.

IC Role / Device Role / Timing Role: Synchronous burst SRAM tightly coupled to FPGA-based DSP engine, using C/C clocks for deterministic read alignment.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides stable timing margin under PVT variation; HSTL I/O ensures compatibility with Xilinx Ultrascale+ memory controllers.

Use Scenario: Storing high-resolution digital stimulus and expected response patterns in automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: Deterministic, low-jitter memory element in pattern generation path, where echo clocks CQ/CQ eliminate setup/hold uncertainty at comparator inputs.

Use Value: Self-timed writes guarantee consistent write completion time; JTAG support enables in-system verification of stored patterns pre-test execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C336200B-300BIN 36-Mbit (2M × 18), 300 MHz, but uses common I/O (not SIO) and lacks echo clocks CQ/CQ Requires bus turnaround management; unsuitable for systems needing simultaneous read/write concurrency Select only if DDR II SIO and echo clock functionality are not required and cost is primary constraint
IS61WV102418BLL-300TQLI 18-Mbit (512K × 36), 300 MHz, single-ended LVCMOS I/O, no ZQ calibration or PLL Lower density, no DDR II timing support, limited to ≤200 MHz reliable operation in high-noise environments Consider only for legacy designs migrating from older SRAMs where footprint change is acceptable and bandwidth demand is ≤600 MB/s

Compared with AS7C336200B-300BIN and IS61WV102418BLL-300TQLI, CY7C1423KV18-300BZXCT uniquely delivers concurrent read/write via separate I/O, echo-clock–assisted data capture, and on-die impedance tuning - essential for deterministic 1.2 GB/s operation in modern packet-processing hardware.

Availability

CY7C1423KV18-300BZXCT is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern memory requiring stable component supply and long-term industrial availability.

Supply support for CY7C1423KV18-300BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1423KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and test equipment where bus turnaround overhead and timing uncertainty must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1423KV18-300BZXCT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin under voltage/temperature variation; when LOW, it configures 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and latched internally - no runtime reconfiguration is supported.

Can CY7C1423KV18-300BZXCT operate with only K and K clocks, without C and C?

Yes - in single-clock mode, the device uses K and K to drive both input sampling and output data (Q[17:0]), eliminating the need for separate C/C clocks. However, echo clocks CQ/CQ remain active and synchronized to K/K, preserving their utility for timing reference even without dedicated output clocks.

How does ZQ pin calibration affect signal integrity in high-speed designs?

ZQ calibration adjusts the output driver strength of Q[17:0] and CQ/CQ pins to match the characteristic impedance of the PCB trace (typically 50 Ω). By connecting an external resistor RQ to ground, the device sets its output impedance to 0.2 × RQ - e.g., 25 Ω for 125 Ω RQ - reducing reflections and improving eye diagram margins at 600 Mbps per pin.

Is CY7C1423KV18-300BZXCT pin-compatible with CY7C1423KV18-333BZXCT?

Yes - both share identical 165-ball FBGA package (13 × 15 × 1.4 mm), identical pinout, and identical electrical interface. The -300 and -333 suffixes denote maximum rated clock frequencies (300 MHz vs. 333 MHz); the -300 variant meets all timing specifications up to 300 MHz and may operate reliably at lower frequencies with relaxed timing margins.

CY7C1423KV18-300BZXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1423KV18-300BZXCT FAQ

1.How can I place an order for CY7C1423KV18-300BZXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1423KV18-300BZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1423KV18-300BZXCT reliable?

The price and inventory of CY7C1423KV18-300BZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1423KV18-300BZXCT is usually 5 days.

3.What payment methods are accepted for CY7C1423KV18-300BZXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1423KV18-300BZXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1423KV18-300BZXCT?

CY7C1423KV18-300BZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1423KV18-300BZXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1423KV18-300BZXCT?

For technical support, including CY7C1423KV18-300BZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1423KV18-300BZXCT requirements.

6.How does Aetrix verify that CY7C1423KV18-300BZXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1423KV18-300BZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1423KV18-300BZXCT meets industry standards.

7.What is the process for return or replacement of CY7C1423KV18-300BZXCT?

All CY7C1423KV18-300BZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1423KV18-300BZXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1423KV18-300BZXCT part is unused and in its original packaging.

Return procedure for CY7C1423KV18-300BZXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1423KV18-300BZXCT Tags

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