Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1424AV18-250BZCT

Part No.:
CY7C1424AV18-250BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1424AV18-250BZCT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,778

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1424AV18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with DDR-II Separate I/O architecture, operating at 250 MHz clock frequency (500 MT/s effective data rate), supporting 2-word burst reads/writes, and featuring dual input clocks (K/K) and dual output clocks (C/C) for precise DDR timing alignment. It serves as high-bandwidth buffer memory in network packet processors and FPGA-based data-path acceleration systems.

For engineers reviewing the CY7C1424AV18 datasheet, CY7C1424AV18 pinout, CY7C1424AV18 application, or CY7C1424AV18 equivalent, key selection criteria include its 1M × 36 organization, 165-ball FBGA package, HSTL I/O compatibility, DLL-assisted data placement, and support for independent read/write ports with echo clocks (CQ/CQ) to simplify high-speed system-level data capture.

Technical Context

This SRAM implements a true separate I/O DDR-II interface: read and write ports share the address bus but use dedicated D[35:0] inputs and Q[35:0] outputs, eliminating bus turnaround delay. Internal pipelining enables one access per clock cycle with 2-word burst transfer per transaction.

Timing is governed by four critical clock domains: K/K for address/control/data input registration, C/C for output data edge alignment, and CQ/CQ echo clocks synchronized to C/C for receiver-side deskewing. The integrated Delay Lock Loop (DLL) ensures ±50 ps data-to-clock alignment under process/voltage/temperature variation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization), enabling single-device storage of two 512K-word × 36-bit data bursts per access.
Maximum Clock Frequency 250 MHz (K/K input), supporting sustained 500 MT/s throughput via double-data-rate transfers on D/Q buses.
Core Supply Voltage 1.8 V ± 0.1 V, compatible with low-power SoC/FPGA I/O domains while maintaining signal integrity at 600 Mbps DDR rates.
I/O Interface Standard HSTL Class I inputs and outputs, with programmable drive strength and expanded VOH range (1.4 V to VDDQ) for robust noise margin in dense PCB layouts.
Burst Length Fixed 2-word burst, reducing address bus toggling frequency by 50% compared to single-word SRAMs at same bandwidth.
Package 165-ball Fine-Pitch BGA (15 mm × 17 mm × 1.4 mm), with 0.8 mm ball pitch and JEDEC-standard footprint for automated assembly.
JTAG Support IEEE 1149.1-compliant test access port (TCK/TMS/TDI/TDO) for boundary-scan testing and in-system diagnostics.

Pinout & Package

165-ball FBGA (15 × 17 × 1.4 mm, 0.8 mm pitch) with HSTL-compatible ball assignments. Pin functions validated per Cypress Document #38-05617 Rev. *D, Page 5–6.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edges of both K and K clocks; supports byte-wise write masking via BWS[3:0].
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of C/C (or K/K in single-clock mode); automatically tri-stated when read port inactive.
K / K Positive/negative input clocks Edge-aligned differential pair controlling all synchronous inputs (address, R/W, LD, BWS); defines access initiation timing.
C / C Positive/negative output clocks Differential pair governing Q[35:0] output timing; used with CQ/CQ to compensate for board flight-time skew in multi-device systems.
CQ / CQ Echo clocks referenced to C/C Free-running copies of C/C, phase-aligned to Q[35:0] output edges-enables source-synchronous capture without external delay calibration.
BWS[3:0] Byte write select (active LOW) Four independent controls masking D[8:0], D[17:9], D[26:18], D[35:27]; preserves unselected bytes during partial writes.
R/W Read/write direction control Sampled with LD to define transaction type: HIGH = read, LOW = write; must meet setup/hold relative to K edge.
ZQ Output impedance calibration reference Connects to external 240 Ω resistor to GND to tune Q[35:0]/CQ/CQ drive strength to match 50 Ω transmission lines.

Key Features

Feature Design Value
DDR-II Separate I/O Architecture Eliminates bidirectional bus turnaround delay by dedicating D[35:0] for writes and Q[35:0] for reads-enabling back-to-back read/write operations without interlock.
Integrated Delay Lock Loop (DLL) Maintains sub-100 ps data-to-clock alignment across PVT variations, ensuring reliable sampling at 500 MT/s without external phase adjustment circuitry.
Programmable HSTL Output Drive Variable drive strength controlled via ZQ calibration, delivering consistent 50 Ω matched output impedance across voltage/temperature for clean 600 Mbps eye diagrams.
Independent Read/Write Clock Domains Supports asynchronous read and write clocking (K/K vs. C/C), allowing memory controller to decouple address generation from data capture timing.
2-Word Burst + Pipelined Access Each LD assertion initiates a 2-word burst; internal pipeline allows new address latching every cycle-achieving 100% bus utilization at full 250 MHz clock rate.

Applications

Network Packet Buffering FPGA-Based Data Acceleration

Use Scenario: Storing ingress/egress packet headers and payloads in 10G Ethernet line cards before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-throughput, low-latency buffer between MAC and traffic manager ASICs, using CQ/CQ echo clocks to align data capture across multiple SRAMs.

Use Value: 500 MT/s bandwidth sustains full 10G line rate (12.5 GB/s) with minimal latency jitter (<150 ps), avoiding packet loss during bursty traffic.

Use Scenario: Serving as local frame buffer for real-time video processing pipelines implemented on Xilinx UltraScale+ FPGAs.

IC Role / Device Role / Timing Role: Dual-port memory resource accessed concurrently by FPGA logic (write) and video DMA engine (read), leveraging separate D/Q buses.

Use Value: 2-word burst reduces address bus activity by half versus single-word SRAMs, lowering FPGA pin count and PCB routing complexity in 4K60 video paths.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband units during FFT/IFFT computation and channel estimation.

IC Role / Device Role / Timing Role: Synchronous burst memory interfaced to TI C66x DSPs via EMIF, using K/K for address strobing and C/C for deterministic read timing.

Use Value: DLL-calibrated data placement ensures <±75 ps timing margin at 250 MHz, meeting strict 3GPP symbol alignment requirements for EVM compliance.

Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation at 500 Mbps vector rates.

IC Role / Device Role / Timing Role: Deterministic-access memory holding stimulus/response vectors, synchronized to ATE pattern generator clocks via JTAG-configurable DLL settings.

Use Value: JTAG 1149.1 support enables in-system boundary scan verification of all 165-ball connections, reducing test fixture development time by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102436BLL-15BLI 1M × 36, 15 ns async access; no DDR, no DLL, no echo clocks; 3.3 V core; 209-pin TQFP. Lower cost for non-burst, non-synchronous designs where 250 MHz clocking and source-synchronous capture are unnecessary. Select when system clock domain is <100 MHz and board layout lacks space for 165-ball FBGA.
Microchip 21SPS136-200BG 1M × 36, 200 MHz DDR-II SIO; identical architecture but lower max frequency; supports only C/C (no CQ/CQ); 165-ball FBGA. Drop-in replacement for bandwidth-constrained systems requiring same pinout but tolerating 20% lower throughput. Choose when existing PCB layout uses CY7C1424AV18 footprint but design does not require 250 MHz operation.

Compared with IS61WV102436BLL-15BLI and 21SPS136-200BG, CY7C1424AV18 delivers 25% higher bandwidth and eliminates system-level timing closure effort via CQ/CQ echo clocks-critical for 10G+ data-path synchronization where deterministic latency matters more than unit cost.

Availability

CY7C1424AV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based data acceleration, telecom baseband processing, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1424AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1424AV18 belongs to the DDR-II SIO SRAM product line, designed specifically for high-bandwidth, low-latency buffering in systems demanding deterministic DDR timing, echo-clock–assisted data capture, and seamless integration with FPGA/DSP memory controllers.

FAQ

What is the minimum supported clock frequency for CY7C1424AV18?

The device operates down to DC (0 Hz) for static operation, but functional burst access requires a minimum K clock frequency of 10 MHz to meet internal timing margins for DLL lock and register setup/hold. Below this, data validity cannot be guaranteed per specification.

Can CY7C1424AV18 operate in single-clock mode without C and C inputs?

Yes. When C and C are tied to K and K respectively, the device enters single-clock mode: Q[35:0] outputs are timed to K/K edges, and CQ/CQ echo clocks track K/K instead of C/C. All timing parameters shift accordingly, with tAC increasing by 1.2 ns versus dual-clock mode.

How is output impedance calibrated using the ZQ pin?

ZQ must be connected to a 240 Ω resistor to ground to calibrate Q[35:0], CQ, and CQ output drivers to 50 Ω. If tied directly to VDDQ, drivers enter minimum-impedance mode (~30 Ω). ZQ must never float or connect to GND-doing so disables calibration and causes signal integrity failure.

Does CY7C1424AV18 support partial writes across all 36 bits?

Yes, via BWS[3:0] signals. Each BWS bit controls an 8-bit byte lane: BWS0 → D[7:0], BWS1 → D[15:8], BWS2 → D[23:16], BWS3 → D[35:24]. Asserting any BWS LOW masks that byte during write; unmasked bytes update, masked bytes retain prior values.

CY7C1424AV18-250BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1424AV18-250BZCT FAQ

1.How can I place an order for CY7C1424AV18-250BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1424AV18-250BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1424AV18-250BZCT reliable?

The price and inventory of CY7C1424AV18-250BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1424AV18-250BZCT is usually 5 days.

3.What payment methods are accepted for CY7C1424AV18-250BZCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1424AV18-250BZCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1424AV18-250BZCT?

CY7C1424AV18-250BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1424AV18-250BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1424AV18-250BZCT?

For technical support, including CY7C1424AV18-250BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1424AV18-250BZCT requirements.

6.How does Aetrix verify that CY7C1424AV18-250BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1424AV18-250BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1424AV18-250BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1424AV18-250BZCT?

All CY7C1424AV18-250BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1424AV18-250BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1424AV18-250BZCT part is unused and in its original packaging.

Return procedure for CY7C1424AV18-250BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1424AV18-250BZCT Tags

  • CY7C1424AV18-250BZCT
  • CY7C1424AV18-250BZCT PDF
  • CY7C1424AV18-250BZCT Datasheet
  • CY7C1424AV18-250BZCT Specifications
  • CY7C1424AV18-250BZCT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1424AV18-250BZCT
  • Buy CY7C1424AV18-250BZCT
  • CY7C1424AV18-250BZCT Price
  • CY7C1424AV18-250BZCT Distributor
  • CY7C1424AV18-250BZCT Supplier
  • CY7C1424AV18-250BZCT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER