Infineon Technologies CY7C1424KV18-250BZC

Overview

CY7C1424KV18-250BZC from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined DDR II SIO SRAM with two-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V or 1.8 V VDDQ. It supports 1-cycle read latency in DDR I mode (DOFF = LOW) and 1.5-cycle latency in DDR II mode (DOFF = HIGH), targeting high-bandwidth buffering in network packet processors.

For engineers reviewing the CY7C1424KV18-250BZC datasheet, CY7C1424KV18-250BZC pinout, CY7C1424KV18-250BZC application, or CY7C1424KV18-250BZC equivalent, key selection criteria include DDR II echo clock timing (CQ/CQ), dual-clock domain support (K/K and C/C), byte-write select granularity (BWS[3:0]), and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements a true separate I/O (SIO) DDR II interface with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of K and K clocks, while write data is registered on both K and K edges, enabling precise timing control for burst-aligned writes.

The device integrates a PLL for accurate data placement, uses echo clocks (CQ/CQ) synchronized to output clocks C/C to simplify system-level data capture, and supports programmable output impedance via ZQ calibration-critical for maintaining signal integrity at 666 MT/s effective data rate.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C336200B-250BIN and IS61WV102436BLL-250TQLI, CY7C1424KV18-250BZC uniquely delivers DDR II SIO with echo clocks and two-word burst-enabling simpler, higher-bandwidth system designs where precise data capture timing is critical.

Availability

CY7C1424KV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, test equipment waveform memory, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1424KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1424KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecom infrastructure where deterministic DDR timing and echo-clock synchronization are essential.

FAQ

What is the function of the DOFF pin on CY7C1424KV18-250BZC?

The DOFF (DDR Off) pin configures the device's read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency and optimized burst timing; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin directly selects internal timing paths and must be held static during operation-it is not dynamically switchable mid-burst.

Can CY7C1424KV18-250BZC operate with only one clock signal (K) instead of K/K?

Yes, CY7C1424KV18-250BZC supports single-clock mode where K is tied to VDDQ and K serves as the sole input clock. In this mode, all synchronous inputs are sampled on K's rising edge, and Q[35:0] outputs are driven on K's rising edge. However, echo clocks CQ/CQ remain functional only if C/C are provided; otherwise, system-level timing margin decreases due to lack of deskew capability.

How does the ZQ pin affect output driver performance?

The ZQ pin enables on-die impedance calibration: when connected to a 240 Ω resistor to ground, it adjusts output driver strength to target 48 Ω (0.2 × RQ), matching typical PCB trace impedance. If tied to VDDQ, minimum impedance (~30 Ω) is selected. Connecting ZQ to GND or leaving it floating violates Absolute Maximum Ratings and may cause output instability or damage.

Is CY7C1424KV18-250BZC pin-compatible with CY7C1423KV18-250BZC?

No-although both use the same 165-ball FBGA package, their pinouts differ significantly. CY7C1424KV18-250BZC uses D[35:0]/Q[35:0] and BWS[3:0], while CY7C1423KV18-250BZC uses D[17:0]/Q[17:0] and BWS[1:0]. Address count also differs (19 vs. 20 pins), and ball assignments for data, byte-select, and control signals are not aligned-requiring separate PCB layouts.