Infineon Technologies CY7C1424KV18-250BZCT

Overview

CY7C1424KV18-250BZCT from Cypress Semiconductor is a 36-Mbit (1M × 36) DDR II synchronous SRAM with separate I/O architecture, operating at 250 MHz clock frequency (500 MT/s effective data rate), 1.8 V core supply, and HSTL-compatible interfaces. It supports two-word burst reads/writes, echo clocks (CQ/CQ), and programmable output impedance via ZQ calibration - deployed in high-speed networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C1424KV18-250BZCT datasheet, CY7C1424KV18-250BZCT pinout, CY7C1424KV18-250BZCT application, or CY7C1424KV18-250BZCT equivalent, key selection criteria include DDR II SIO timing compliance, 165-ball FBGA (13 × 15 mm) mechanical fit, DOFF-configurable read latency (1-cycle vs. 1.5-cycle), and JTAG 1149.1 test port support for system-level validation.

Technical Context

This SRAM implements a true DDR II separate I/O architecture: independent read and write ports eliminate bus turnaround delays, with address latching on alternating rising edges of complementary K/K clocks. Write data is registered on both K and K edges, while read data is driven synchronously to C/C (or K/K in single-clock mode), enabling precise timing control in multi-device memory systems.

The device integrates an on-chip PLL for accurate data placement, echo clocks (CQ/CQ) aligned to C/C for simplified high-speed data capture, and synchronous self-timed write circuitry. DOFF pin selection determines read latency mode: LOW enables DDR I–compatible 1-cycle latency; HIGH configures DDR II–optimized 1.5-cycle latency with improved bandwidth efficiency.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 1.4 mm height, 0.8 mm ball pitch, Pb-free compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C33618A-250BIN and IS61WV102436BLL-250BLI, CY7C1424KV18-250BZCT uniquely delivers DDR II separate I/O, echo clocks, and configurable latency - essential for high-efficiency, low-jitter memory subsystems in modern FPGA and ASIC-based platforms.

Availability

CY7C1424KV18-250BZCT is available at Aetrix Electronics and suitable for high-speed networking packet buffers, FPGA co-processor caches, and telecom baseband processing systems requiring stable component supply, long-term lifecycle assurance, and Pb-free manufacturing compliance.

Supply support for CY7C1424KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1424KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for bandwidth-constrained, low-latency memory subsystems in FPGA- and ASIC-based infrastructure equipment where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1424KV18-250BZCT?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency for optimized bandwidth efficiency; when LOW, it reverts to DDR I–compatible 1-cycle latency. This setting directly affects controller pipeline staging and must be fixed at power-up - it is not dynamically switchable during operation.

Can CY7C1424KV18-250BZCT operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this mode, read data is driven on rising edges of K/K instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, deskew capability and maximum timing margin are reduced compared to dual-clock operation with dedicated C/C.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (typically 240 Ω) tied to ground. During calibration, internal circuitry measures this resistance and adjusts driver strength so that Q[35:0], CQ, and CQ output impedances equal 0.2 × RQ (e.g., 48 Ω). The pin must never be left floating or tied directly to GND - doing so disables calibration and risks signal integrity failure.

Is JTAG boundary scan supported on CY7C1424KV18-250BZCT?

Yes - the device implements IEEE 1149.1 JTAG TAP with TCK, TMS, TDI, and TDO pins fully compliant. It supports instruction register loading, boundary scan register access, and IDCODE readout. JTAG can be disabled via fuse or strap option, but default configuration enables full test access for production ICT and system-level diagnostics.