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Infineon Technologies CY7C1425AV18-200BZC

Part No.:
CY7C1425AV18-200BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1425AV18-200BZC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,117

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Product details

Overview

CY7C1425AV18-200BZC from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR-II™ SRAM with dual independent read/write ports, 200 MHz clock operation (500 Mbps DDR data rate), 1.8V core supply, and HSTL-compatible I/O. It delivers concurrent burst reads/writes in networking packet buffers, high-speed test equipment memory controllers, and FPGA co-processor caches.

For engineers reviewing the CY7C1425AV18-200BZC datasheet, CY7C1425AV18-200BZC pinout, CY7C1425AV18-200BZC application, or CY7C1425AV18-200BZC equivalent, key selection criteria include its 2-word burst architecture, echo-clock–assisted data capture, DLL-enabled timing accuracy, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The device implements a synchronous pipelined QDR-II architecture with physically separate read and write data paths-Q[8:0] outputs and D[8:0] inputs-eliminating bus turnaround overhead. Address latching occurs on rising edges of dedicated K (read) and K (write) clocks, while output data is synchronized to C/C clocks for skew mitigation.

It integrates a Delay Lock Loop (DLL) for precise internal timing alignment, supports JTAG 1149.1 boundary scan, and uses VREF-referenced HSTL I/O with programmable drive strength. Write operations are self-timed and fully synchronous, with byte-level write select (BWS0) enabling partial writes without read-modify-write cycles.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4M × 9 = 36 Mbit; supports 9-bit wide data path for parity-aware systems
Max Clock Frequency 200 MHz; enables 400 MT/s effective throughput per port (DDR)
Data Rate 500 Mbps per port (DDR at 200 MHz); sustains 900 MB/s aggregate bandwidth
Core Supply VDD = 1.8 V ±0.1 V; low-power operation compatible with advanced SoC voltage domains
I/O Supply VDDQ = 1.4 V to 1.8 V; supports HSTL Class I/II signaling with adjustable drive
Package 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, lead-free option available
Timing Architecture DLL-based internal timing; eliminates external phase alignment components

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Designed for high-speed signal integrity with dedicated power/ground ball distribution and impedance-controlled routing support.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data sampled on rising edge of K clock; supports full or partial writes via BWS0
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising edges of C/C clocks; tri-stated when RPS inactive
RPS Read port select Active-low control sampled on K rising edge; initiates 2-word burst read sequence
WPS Write port select Active-low control sampled on K rising edge; enables write access to selected address
BWS0 Byte write select Active-low signal controlling all 9 bits of D[8:0]; deassertion blocks entire write word
K / K Read/write clock inputs Differential pair for address/control latching; rising edges define all synchronous timing references
C / C Output data clocks Differential pair driving Q[8:0]; enables deskewed capture at controller with matched flight time
CQ / CQ Echo clocks Free-running copies of C/C; simplify timing closure by providing deterministic output clock phase
ZQ Impedance calibration input Connects to external 240 Ω resistor to ground; tunes output driver impedance to match 50 Ω trace
VREF Input reference voltage Static 0.9 V reference for HSTL input thresholds and AC measurement points

Key Features

Feature Design Value
Independent dual-port architecture Eliminates data bus contention and turn-around delays-enables true concurrent read/write at full bandwidth
2-word burst transfers Each access delivers two sequential 9-bit words per clock cycle-reducing address overhead and improving efficiency
Integrated Delay Lock Loop (DLL) Provides sub-cycle timing alignment between internal clocks and data paths-removes need for external delay tuning
HSTL Class I/II I/O with ZQ calibration Ensures signal integrity at 500 Mbps with programmable drive strength and on-die impedance matching
JTAG 1149.1 test access port Supports boundary-scan testing and system-level diagnostics without additional test logic

Applications

High-Speed Packet Buffering FPGA-Based Protocol Acceleration

Use Scenario: Line-rate buffering in 10 GbE switch fabric ASICs handling variable-length Ethernet frames.

IC Role / Device Role / Timing Role: Dual-port SRAM acts as ingress/egress FIFO with zero-latency concurrent access-K/K clocks align with packet header/tail arrival timing.

Use Value: 500 Mbps DDR throughput per port sustains full 10 GbE line rate with 9-bit metadata tagging and CRC storage.

Use Scenario: Real-time TCP/IP offload engine implemented on Xilinx Virtex-6 FPGA with embedded PowerPC core.

IC Role / Device Role / Timing Role: Dedicated memory for session state tables and reassembly buffers-RPS/WPS enable lock-free concurrent CPU and DMA access.

Use Value: DLL-synchronized CQ/CQ clocks allow FPGA logic to capture Q[8:0] with single-cycle setup/hold margin at 200 MHz.

Automated Test Equipment (ATE) Memory Controller High-Frequency Trading (HFT) Signal Processing

Use Scenario: Pattern memory for semiconductor wafer testers requiring nanosecond-level timing repeatability across 100+ channels.

IC Role / Device Role / Timing Role: Burst-access memory storing stimulus/response vectors-BWS0 enables selective update of pass/fail flags without disturbing pattern data.

Use Value: VREF-referenced HSTL I/O ensures <±50 ps jitter on D[8:0]/Q[8:0], meeting ATE Class III timing compliance.

Use Scenario: Low-latency order book cache in FPGA-accelerated trading platform processing market data feeds at 500 kMsg/s.

IC Role / Device Role / Timing Role: Co-processor scratchpad for real-time price aggregation-echo clocks (CQ/CQ) eliminate board-level skew between multiple SRAMs.

Use Value: 165-ball FBGA allows dense placement adjacent to FPGA banks, reducing interconnect delay to <120 ps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit QDR-II+, 100 MHz max clock (200 Mbps DDR), 2.5V core, 1.8V I/O Limited to lower frequency; requires level-shifting for 1.8V systems Select when legacy 2.5V infrastructure exists and bandwidth demand ≤ 400 MB/s
ISSI IS61WV102418B 18-Mbit sync SRAM, single port, 166 MHz async interface, 3.3V only No DDR, no dual port, no echo clocks-requires external arbitration logic Select only for cost-sensitive, non-concurrent applications where latency <10 ns is secondary

Compared with IDT72T36120L10BG and IS61WV102418B, CY7C1425AV18-200BZC uniquely delivers 500 Mbps DDR bandwidth at 1.8V with integrated DLL and echo clocks-making it the only choice for new designs targeting ≥200 MHz sustained dual-port throughput without external timing compensation.

Availability

CY7C1425AV18-200BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor caching, and automated test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1425AV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1425AV18 belongs to the QDR-II SRAM product line, engineered specifically for applications demanding deterministic low-latency memory access with concurrent read/write capability-targeting network infrastructure, test instrumentation, and real-time signal processing.

FAQ

What is the minimum supported VDDQ voltage for CY7C1425AV18-200BZC?

The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed-HSTL I/O thresholds and drive strength degrade outside this range, risking setup/hold violations at 200 MHz. Designers must maintain VDDQ ≥1.4 V and use VREF = 0.9 V for proper input switching point calibration.

Can CY7C1425AV18-200BZC operate without the DLL enabled?

Yes-connecting DOFF to ground disables the DLL, reverting to fixed internal delays. However, AC timing parameters change significantly: tAC increases by up to 1.8 ns, and CQ/CQ phase relationship becomes uncontrolled. This mode is only recommended for prototype validation-not production use.

How does BWS0 function in CY7C1425AV18-200BZC compared to NWS signals in CY7C1410AV18?

BWS0 controls all 9 bits of D[8:0] as a single byte-select signal-unlike CY7C1410AV18's NWS0/NWS1 which target nibbles. Deasserting BWS0 blocks the entire 9-bit write; there is no sub-byte granularity. This simplifies control logic but requires full-word writes when parity bits are updated alongside data.

Is the 165-ball FBGA package of CY7C1425AV18-200BZC compatible with standard reflow profiles?

Yes-the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260°C. Recommended profile includes ramp-to-peak ≤3°C/s, time above 217°C of 60–150 s, and peak temperature of 235–245°C for lead-free assembly.

CY7C1425AV18-200BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1425AV18-200BZC FAQ

1.How can I place an order for CY7C1425AV18-200BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1425AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1425AV18-200BZC reliable?

The price and inventory of CY7C1425AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425AV18-200BZC is usually 5 days.

3.What payment methods are accepted for CY7C1425AV18-200BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1425AV18-200BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1425AV18-200BZC?

CY7C1425AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1425AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1425AV18-200BZC?

For technical support, including CY7C1425AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425AV18-200BZC requirements.

6.How does Aetrix verify that CY7C1425AV18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1425AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425AV18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1425AV18-200BZC?

All CY7C1425AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425AV18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1425AV18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1425AV18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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