Infineon Technologies CY7C1425AV18-200BZC
- Part No.:
- CY7C1425AV18-200BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1425AV18-200BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,117
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Product details
Overview
CY7C1425AV18-200BZC from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR-II™ SRAM with dual independent read/write ports, 200 MHz clock operation (500 Mbps DDR data rate), 1.8V core supply, and HSTL-compatible I/O. It delivers concurrent burst reads/writes in networking packet buffers, high-speed test equipment memory controllers, and FPGA co-processor caches.
For engineers reviewing the CY7C1425AV18-200BZC datasheet, CY7C1425AV18-200BZC pinout, CY7C1425AV18-200BZC application, or CY7C1425AV18-200BZC equivalent, key selection criteria include its 2-word burst architecture, echo-clock–assisted data capture, DLL-enabled timing accuracy, and 165-ball FBGA package compatibility with high-density PCB layouts.
Technical Context
The device implements a synchronous pipelined QDR-II architecture with physically separate read and write data paths-Q[8:0] outputs and D[8:0] inputs-eliminating bus turnaround overhead. Address latching occurs on rising edges of dedicated K (read) and K (write) clocks, while output data is synchronized to C/C clocks for skew mitigation.
It integrates a Delay Lock Loop (DLL) for precise internal timing alignment, supports JTAG 1149.1 boundary scan, and uses VREF-referenced HSTL I/O with programmable drive strength. Write operations are self-timed and fully synchronous, with byte-level write select (BWS0) enabling partial writes without read-modify-write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 9 = 36 Mbit; supports 9-bit wide data path for parity-aware systems |
| Max Clock Frequency | 200 MHz; enables 400 MT/s effective throughput per port (DDR) |
| Data Rate | 500 Mbps per port (DDR at 200 MHz); sustains 900 MB/s aggregate bandwidth |
| Core Supply | VDD = 1.8 V ±0.1 V; low-power operation compatible with advanced SoC voltage domains |
| I/O Supply | VDDQ = 1.4 V to 1.8 V; supports HSTL Class I/II signaling with adjustable drive |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, lead-free option available |
| Timing Architecture | DLL-based internal timing; eliminates external phase alignment components |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Designed for high-speed signal integrity with dedicated power/ground ball distribution and impedance-controlled routing support.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit parallel data sampled on rising edge of K clock; supports full or partial writes via BWS0 |
| Q[8:0] | Synchronous read data output | 9-bit parallel data driven on rising edges of C/C clocks; tri-stated when RPS inactive |
| RPS | Read port select | Active-low control sampled on K rising edge; initiates 2-word burst read sequence |
| WPS | Write port select | Active-low control sampled on K rising edge; enables write access to selected address |
| BWS0 | Byte write select | Active-low signal controlling all 9 bits of D[8:0]; deassertion blocks entire write word |
| K / K | Read/write clock inputs | Differential pair for address/control latching; rising edges define all synchronous timing references |
| C / C | Output data clocks | Differential pair driving Q[8:0]; enables deskewed capture at controller with matched flight time |
| CQ / CQ | Echo clocks | Free-running copies of C/C; simplify timing closure by providing deterministic output clock phase |
| ZQ | Impedance calibration input | Connects to external 240 Ω resistor to ground; tunes output driver impedance to match 50 Ω trace |
| VREF | Input reference voltage | Static 0.9 V reference for HSTL input thresholds and AC measurement points |
Key Features
| Feature | Design Value |
|---|---|
| Independent dual-port architecture | Eliminates data bus contention and turn-around delays-enables true concurrent read/write at full bandwidth |
| 2-word burst transfers | Each access delivers two sequential 9-bit words per clock cycle-reducing address overhead and improving efficiency |
| Integrated Delay Lock Loop (DLL) | Provides sub-cycle timing alignment between internal clocks and data paths-removes need for external delay tuning |
| HSTL Class I/II I/O with ZQ calibration | Ensures signal integrity at 500 Mbps with programmable drive strength and on-die impedance matching |
| JTAG 1149.1 test access port | Supports boundary-scan testing and system-level diagnostics without additional test logic |
Applications
| High-Speed Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
|
Use Scenario: Line-rate buffering in 10 GbE switch fabric ASICs handling variable-length Ethernet frames. IC Role / Device Role / Timing Role: Dual-port SRAM acts as ingress/egress FIFO with zero-latency concurrent access-K/K clocks align with packet header/tail arrival timing. Use Value: 500 Mbps DDR throughput per port sustains full 10 GbE line rate with 9-bit metadata tagging and CRC storage. |
Use Scenario: Real-time TCP/IP offload engine implemented on Xilinx Virtex-6 FPGA with embedded PowerPC core. IC Role / Device Role / Timing Role: Dedicated memory for session state tables and reassembly buffers-RPS/WPS enable lock-free concurrent CPU and DMA access. Use Value: DLL-synchronized CQ/CQ clocks allow FPGA logic to capture Q[8:0] with single-cycle setup/hold margin at 200 MHz. |
| Automated Test Equipment (ATE) Memory Controller | High-Frequency Trading (HFT) Signal Processing |
|
Use Scenario: Pattern memory for semiconductor wafer testers requiring nanosecond-level timing repeatability across 100+ channels. IC Role / Device Role / Timing Role: Burst-access memory storing stimulus/response vectors-BWS0 enables selective update of pass/fail flags without disturbing pattern data. Use Value: VREF-referenced HSTL I/O ensures <±50 ps jitter on D[8:0]/Q[8:0], meeting ATE Class III timing compliance. |
Use Scenario: Low-latency order book cache in FPGA-accelerated trading platform processing market data feeds at 500 kMsg/s. IC Role / Device Role / Timing Role: Co-processor scratchpad for real-time price aggregation-echo clocks (CQ/CQ) eliminate board-level skew between multiple SRAMs. Use Value: 165-ball FBGA allows dense placement adjacent to FPGA banks, reducing interconnect delay to <120 ps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR-II+, 100 MHz max clock (200 Mbps DDR), 2.5V core, 1.8V I/O | Limited to lower frequency; requires level-shifting for 1.8V systems | Select when legacy 2.5V infrastructure exists and bandwidth demand ≤ 400 MB/s |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, single port, 166 MHz async interface, 3.3V only | No DDR, no dual port, no echo clocks-requires external arbitration logic | Select only for cost-sensitive, non-concurrent applications where latency <10 ns is secondary |
Compared with IDT72T36120L10BG and IS61WV102418B, CY7C1425AV18-200BZC uniquely delivers 500 Mbps DDR bandwidth at 1.8V with integrated DLL and echo clocks-making it the only choice for new designs targeting ≥200 MHz sustained dual-port throughput without external timing compensation.
Availability
CY7C1425AV18-200BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor caching, and automated test equipment requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1425AV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1425AV18 belongs to the QDR-II SRAM product line, engineered specifically for applications demanding deterministic low-latency memory access with concurrent read/write capability-targeting network infrastructure, test instrumentation, and real-time signal processing.
FAQ
What is the minimum supported VDDQ voltage for CY7C1425AV18-200BZC?
The device supports VDDQ from 1.4 V to 1.8 V. Operation below 1.4 V is not guaranteed-HSTL I/O thresholds and drive strength degrade outside this range, risking setup/hold violations at 200 MHz. Designers must maintain VDDQ ≥1.4 V and use VREF = 0.9 V for proper input switching point calibration.
Can CY7C1425AV18-200BZC operate without the DLL enabled?
Yes-connecting DOFF to ground disables the DLL, reverting to fixed internal delays. However, AC timing parameters change significantly: tAC increases by up to 1.8 ns, and CQ/CQ phase relationship becomes uncontrolled. This mode is only recommended for prototype validation-not production use.
How does BWS0 function in CY7C1425AV18-200BZC compared to NWS signals in CY7C1410AV18?
BWS0 controls all 9 bits of D[8:0] as a single byte-select signal-unlike CY7C1410AV18's NWS0/NWS1 which target nibbles. Deasserting BWS0 blocks the entire 9-bit write; there is no sub-byte granularity. This simplifies control logic but requires full-word writes when parity bits are updated alongside data.
Is the 165-ball FBGA package of CY7C1425AV18-200BZC compatible with standard reflow profiles?
Yes-the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260°C. Recommended profile includes ramp-to-peak ≤3°C/s, time above 217°C of 60–150 s, and peak temperature of 235–245°C for lead-free assembly.
CY7C1425AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1425AV18-200BZC FAQ
1.How can I place an order for CY7C1425AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1425AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1425AV18-200BZC reliable?
The price and inventory of CY7C1425AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425AV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1425AV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1425AV18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1425AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1425AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1425AV18-200BZC?
For technical support, including CY7C1425AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1425AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1425AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1425AV18-200BZC?
All CY7C1425AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1425AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1425AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1425AV18-200BZC Tags

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