Infineon Technologies CY7C1425AV18-250BZXC
- Part No.:
- CY7C1425AV18-250BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1425AV18-250BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1425AV18-250BZXC from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR-II™ SRAM with separate read/write ports, 250-MHz clock operation, DDR interfaces on both ports (500-MHz data rate), and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.
For engineers reviewing the CY7C1425AV18-250BZXC datasheet, CY7C1425AV18-250BZXC pinout, CY7C1425AV18-250BZXC application, or CY7C1425AV18-250BZXC equivalent, key selection criteria include its 2-word burst architecture, HSTL I/O compatibility, DLL-enabled timing accuracy, and dual-clock domain support for skew-critical backplane interfaces.
Technical Context
The device implements a synchronous pipelined QDR-II architecture with physically independent read and write data paths-eliminating bus turnaround and enabling true concurrent access. Address latching occurs on rising edges of dedicated K (read) and K̄ (write) clocks, while output data is synchronized to C/C̄ echo clocks for precise capture in high-speed systems.
It integrates a Delay Lock Loop (DLL) for sub-cycle data alignment, supports variable-drive HSTL output buffers, and uses a single multiplexed address bus shared across both ports. Write operations are self-timed internally, and depth expansion is enabled via independent RPS/WPS and byte-level BWS[0] control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4M × 9 = 36 Mbit; supports 2-word burst transfers per access for sustained 9-Gbps bandwidth at 250 MHz. |
| Operating Frequency | 250 MHz clock; enables 500 MT/s DDR data rate on both read and write ports-critical for OC-192/STM-64 interface buffers. |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V; ensures compatibility with HSTL_18 I/O standards and low-power core operation. |
| Timing Architecture | DLL-synchronized outputs with C/C̄ echo clocks; reduces setup/hold margin requirements by compensating for board trace skew up to ±150 ps. |
| Write Control | Single BWS0 input controls all 9 bits; simplifies byte-mask logic versus nibble-select schemes used in x8 variants. |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm); RoHS-compliant, thermally optimized for multi-layer PCBs in high-density switch fabric modules. |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, lead-free compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | Sampled on rising edge of K̄; 9-bit parallel data path aligned to write port timing-no bus turnaround required. |
| Q[8:0] | Synchronous read data outputs | Driven on rising edges of C/C̄; 9-bit DDR output with echo clocks CQ/CQ̄ for controller-side deskew. |
| RPS | Read port select (active LOW) | Enables read burst; deassertion tri-states Q[8:0] after completion-prevents contention during port switching. |
| WPS | Write port select (active LOW) | Initiates write burst; when deasserted, D[8:0] is ignored-enables clean port arbitration in multi-SRAM systems. |
| BWS0 | Byte write select (active LOW) | Controls all 9 bits in CY7C1425AV18; eliminates need for multiple write-enable signals unlike x8/x18 variants. |
| K, K̄ | Positive/negative input clocks | Rising edges latch RPS, WPS, BWS0, and addresses; K for read, K̄ for write-enables independent port timing. |
| C, C̄ | Positive/negative output clocks | Reference clocks for Q[8:0] output timing; paired with CQ/CQ̄ to compensate flight-time mismatch in point-to-point links. |
| ZQ | Output impedance calibration input | Connects to external 240 Ω resistor to ground; tunes Q[8:0] and CQ/CQ̄ drive strength to match 50 Ω transmission lines. |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay and contention-enables full-duplex memory access essential for real-time packet forwarding. |
| 2-word burst architecture | Delivers two consecutive 9-bit words per clock cycle-reduces address strobe overhead and increases effective bandwidth by 100% vs. single-word SRAM. |
| Delay Lock Loop (DLL) | Aligns internal data launch to C/C̄ edges within ±25 ps-enables reliable 500-MHz DDR operation without external phase alignment circuitry. |
| HSTL-compatible I/O | VDDQ-referenced 1.4–1.8 V outputs with programmable drive strength-ensures signal integrity on long traces in telecom backplanes. |
| JTAG 1149.1 test access | Full boundary-scan support via TDI/TDO/TCK/TMS pins-enables in-system verification of interconnects in dense FPGA+SRAM designs. |
Applications
| Network Packet Buffering | Switch Fabric Lookup Table |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-level buffer between SERDES and traffic manager ASIC-reads next packet while writing current one. Use Value: Concurrent 500-MT/s read/write throughput prevents head-of-line blocking and maintains wire-speed forwarding at OC-192 rates. |
Use Scenario: Holding forwarding table entries in modular chassis switches with distributed control planes. IC Role / Device Role / Timing Role: High-speed lookup engine accessed simultaneously by ingress and egress pipeline stages using independent K/K̄ clocks. Use Value: 250-MHz operation with DLL-aligned outputs ensures deterministic <1.2 ns access latency across temperature and voltage corners. |
| Baseband Processing Memory | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of OFDM symbol data in LTE macrocell baseband units. IC Role / Device Role / Timing Role: Burst-access memory interfacing with dual-DSP cores-one writes processed symbols, the other reads for modulation. Use Value: 9-bit width matches standard soft-decision quantization depth; BWS0 enables selective symbol update without full-word overwrite. |
Use Scenario: Storing high-speed digital stimulus patterns in ATE systems targeting SerDes PHY validation. IC Role / Device Role / Timing Role: Pattern generator memory feeding 500-MHz differential data streams to DUT via HSTL drivers. Use Value: CQ/CQ̄ echo clocks allow tester receiver to lock precisely to data eye center-reducing pattern jitter below 1.5 ps RMS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C33680B-250BIN | 36-Mbit QDR-II+ (not QDR-II); adds dynamic ODT and enhanced DLL-supports 333 MHz operation but requires updated timing constraints. | Targeted at newer switch ASICs with tighter skew budgets; lacks NC/144M pin for legacy footprint compatibility. | Select if migrating to higher-frequency designs and can revise PCB layout for updated power/ground pin distribution. |
| IS61WV102418BLL-250BLI | 1M × 18 sync SRAM with single-port, no DDR; 250 MHz max, but only 250-MT/s (not 500-MT/s) due to shared I/O bus. | Suitable for cost-sensitive control-plane buffers where concurrency is not required-lower pin count (119-TSOPII) but half the bandwidth. | Choose only for non-concurrent use cases; cannot replace CY7C1425AV18-250BZXC in data-path roles without architectural redesign. |
Compared with AS7C33680B-250BIN and IS61WV102418BLL-250BLI, the CY7C1425AV18-250BZXC uniquely delivers true 500-MT/s full-duplex bandwidth in a mature, pin-stable QDR-II implementation-making it optimal for field-deployed telecom infrastructure requiring long-term supply continuity and proven thermal reliability.
Availability
CY7C1425AV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric lookup tables, baseband processing memory, and test equipment pattern memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1425AV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems, with headquarters in San Jose, CA.
The QDR-II SRAM product line targets high-speed networking and datacom applications demanding deterministic latency, concurrent access, and DDR bandwidth-specifically engineered for line card and switch fabric memory subsystems.
FAQ
What is the function of the ZQ pin on CY7C1425AV18-250BZXC?
The ZQ pin calibrates output driver impedance to match the system data bus. When connected to a 240 Ω resistor to ground, it sets Q[8:0] and CQ/CQ̄ output impedance to 48 Ω (0.2 × 240 Ω), ensuring minimal reflection on 50 Ω transmission lines. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited.
Can CY7C1425AV18-250BZXC operate in single-clock mode?
Yes-it supports single-clock mode using only K and C inputs, with K̄ and C̄ tied to appropriate logic levels. In this configuration, K serves as the master clock for both read and write address latching, and C clocks all output data. The DLL remains active, preserving timing accuracy, but echo clock deskew capability is reduced compared to dual-clock operation.
How does the BWS0 signal differ from NWS0/NWS1 in CY7C1410AV18?
BWS0 in CY7C1425AV18 controls all 9 data bits as a single byte-select signal, whereas CY7C1410AV18 uses NWS0/NWS1 to independently enable D[3:0] and D[7:4] nibbles. This simplifies write masking logic for 9-bit interfaces but removes granular 4-bit write capability-making CY7C1425AV18 better suited for parity-inclusive or ECC-enabled systems.
Is the DOFF pin required for normal operation?
No-DOFF is optional. When left unconnected or pulled HIGH, the internal DLL operates normally for precise data alignment. Pulling DOFF LOW disables the DLL, reverting to fixed-delay output timing; this increases setup/hold margin requirements and limits maximum operating frequency to 200 MHz, so it is recommended only for debug or legacy timing validation.
CY7C1425AV18-250BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1425AV18-250BZXC FAQ
1.How can I place an order for CY7C1425AV18-250BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1425AV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1425AV18-250BZXC reliable?
The price and inventory of CY7C1425AV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425AV18-250BZXC is usually 5 days.
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Once your CY7C1425AV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1425AV18-250BZXC?
For technical support, including CY7C1425AV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425AV18-250BZXC requirements.
6.How does Aetrix verify that CY7C1425AV18-250BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1425AV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425AV18-250BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1425AV18-250BZXC?
All CY7C1425AV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425AV18-250BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1425AV18-250BZXC part is unused and in its original packaging.
Return procedure for CY7C1425AV18-250BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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