Infineon Technologies CY7C1425JV18-250BZC

Overview

CY7C1425JV18-250BZC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, 267 MHz maximum clock frequency (250 MHz guaranteed), DDR interfaces on independent read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply. It delivers 534 MT/s data rate per port in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1425JV18-250BZC datasheet, CY7C1425JV18-250BZC pinout, CY7C1425JV18-250BZC application, or CY7C1425JV18-250BZC equivalent, key selection criteria include burst depth (2-word), DLL-enabled 1.5-cycle read latency, HSTL-18 I/O compatibility, 165-ball FBGA package, and support for concurrent read/write operations without bus turnaround.

Technical Context

The device implements true dual-port QDR-II architecture with physically separate read and write data paths, enabling fully independent access to the same memory array. All synchronous inputs are registered on rising edges of K (write) and K (read) clocks, while output data is edge-aligned to C/C clocks with echo clocks CQ/CQ for timing deskew.

It supports both DLL-on mode (1.5-cycle read latency, 267 MHz operation) and DLL-off mode (1-cycle latency, up to 167 MHz, QDR-I timing). Write operations use synchronous self-timed internal control, and byte write selects (BWS0) allow partial 9-bit word updates without disturbing other bits.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with AS7C3364B-250BIN, CY7C1425JV18-250BZC offers higher core voltage margin and mature QDR-II ecosystem support; compared with IS42S32800J-25BLI, it provides deterministic latency and true dual-port operation essential for real-time buffering.

Availability

CY7C1425JV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom line card buffering, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1425JV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's QDR-II SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and telecom infrastructure where concurrent access and timing precision are critical.

FAQ

What is the function of the DOFF pin on CY7C1425JV18-250BZC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled to ground, the device reverts to QDR-I timing mode with 1-cycle read latency and a maximum operating frequency of 167 MHz. For normal QDR-II operation at 250 MHz, DOFF must be pulled up via a ≤10 kΩ resistor to VDDQ.

Can CY7C1425JV18-250BZC operate with different supply voltages on VDD and VDDQ?

Yes - VDD is strictly 1.8 V ± 0.1 V for core logic, while VDDQ may range from 1.4 V to 1.8 V to match HSTL-18 interface standards. This separation allows optimization of I/O signal integrity independently from core timing, and supports mixed-voltage board designs where memory controllers use lower I/O voltage.

How does the BWS0 signal function in CY7C1425JV18-250BZC?

BWS0 is the sole byte write select for the 9-bit data width. When asserted low, it enables writing to all bits of D[8:0]; when high, the entire 9-bit word write is inhibited. Unlike nibble-select variants, this device does not support partial 9-bit updates - BWS0 operates as a full-word gate, preserving data coherency during selective writes.

Is the 165-ball FBGA package of CY7C1425JV18-250BZC compatible with standard reflow profiles?

Yes - the 165-ball FBGA (15 × 17 × 1.4 mm) uses lead-free solder balls and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard Pb-free reflow profiles with peak temperature ≤260°C and time above liquidus of 60–90 seconds are qualified; board layout must observe 0.8 mm ball pitch and recommended pad geometry per Cypress AN98547.