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Infineon Technologies CY7C1425JV18-250BZI

Part No.:
CY7C1425JV18-250BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1425JV18-250BZI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,190

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Product details

Overview

CY7C1425JV18 from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, dual independent read/write ports, 267 MHz operation (534 Mbps DDR data rate), 1.8V core supply, and 165-ball FBGA package. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1425JV18 datasheet, CY7C1425JV18 pinout, CY7C1425JV18 application, or CY7C1425JV18 equivalent, key selection criteria include burst-2 QDR-II timing, HSTL I/O compatibility, DLL-enabled 1.5-cycle read latency, and x9 byte-write select support for partial writes in packet header processing.

Technical Context

The CY7C1425JV18 implements true dual-port synchronous pipelined architecture: separate K/K clocks latch write addresses and data, while C/C clocks control read data output timing. Its Delay Lock Loop (DLL) aligns echo clocks CQ/CQ to input clocks for precise 534 MHz data capture at system level.

All operations are fully synchronous with rising-edge-triggered registers; write port uses self-timed internal circuitry, and read port supports 1-cycle latency (DLL off) or 1.5-cycle latency (DLL on). Address bus is multiplexed, with 21-bit A[20:0] supporting 4M-depth addressing across two 2M×9 arrays.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (4M × 9 organization)
Max Clock Frequency 267 MHz - enables 534 Mbps per data pin via DDR interface on both ports
Read Latency 1.5 cycles with DLL enabled - ensures deterministic timing alignment for high-speed SerDes interfaces
Core Supply 1.8 V ±0.1 V - matches low-voltage ASIC/FPGA I/O domains while minimizing dynamic power
I/O Supply VDDQ = 1.4 V to 1.8 V - supports HSTL Class I/II drive strength and termination matching
Burst Length 2-word fixed burst - delivers two sequential 9-bit words per access, optimizing packet payload throughput
Write Select BWS0 active-low byte write enable - allows selective 9-bit write without disturbing adjacent data in header-modification applications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data sampled on rising edge of K clock; supports full or partial writes via BWS0
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising edges of both C and C clocks; tri-stated when RPS inactive
K / K Write address/data capture clocks Differential pair latching write address A[20:0] and D[8:0]; K rising edge initiates write transaction
C / C Read data output clocks Differential pair controlling Q[8:0] timing; enables deskew across multi-device memory subsystems
CQ / CQ Output echo clocks Free-running copies of C/C synchronized to output clock domain - simplifies FPGA capture logic design
RPS Read port select Active-low signal sampled on K rising edge; enables burst-2 read access and controls Q[8:0] driver state
WPS Write port select Active-low signal sampled on K rising edge; gates write data flow and activates internal write timing path
BWS0 Byte write select Active-low control for 9-bit write mask; permits partial updates without read-modify-write overhead
ZQ Output impedance calibration Connects to external resistor to ground to tune Q[8:0]/CQ/CQ drive strength to match 50 Ω PCB trace impedance
DOFF DLL disable Pull-low disables DLL, reverting to QDR-I mode (167 MHz max, 1-cycle latency) for backward compatibility

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround delay - enables simultaneous 534 Mbps read and write in same cycle for full-duplex packet buffers
DDR interfaces on both ports Doubles effective bandwidth without increasing clock frequency - reduces EMI and timing closure complexity vs. SDR
Delay Lock Loop (DLL) Aligns CQ/CQ echo clocks to C/C with sub-100 ps jitter - enables reliable >500 Mbps data capture in FPGA-based systems
HSTL-compatible I/O Supports 1.4–1.8 V VDDQ with programmable drive strength - interoperates with Xilinx Virtex-5/7 and Intel Stratix IV/V I/O banks
JTAG 1149.1 test port Enables boundary-scan testing of memory interconnects and board-level validation without functional initialization

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero turnaround time between read and write bursts.

Use Value: 267 MHz QDR-II operation sustains 96 Gbps aggregate bandwidth across multiple devices - meets OC-192/STM-64 line-rate requirements.

Use Scenario: Buffering ATM cells and MPLS labels in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: High-reliability memory subsystem providing deterministic 1.5-cycle read latency for real-time traffic shaping.

Use Value: DLL-synchronized CQ/CQ clocks eliminate setup/hold violations at 534 Mbps - reduces FPGA logic resources needed for deserialization.

Baseband Processing Memory High-Speed Test Equipment Buffer

Use Scenario: Temporary storage of IQ samples between ADC/DAC stages in 4G/LTE radio units.

IC Role / Device Role / Timing Role: Burst-2 SRAM interfacing directly with multi-gigabit JESD204B receivers/transmitters via HSTL I/O.

Use Value: x9 data width matches 9-bit ADC resolution; BWS0 enables selective update of metadata fields without corrupting sample data.

Use Scenario: Capturing high-fidelity waveform data during automated semiconductor parametric testing.

IC Role / Device Role / Timing Role: Low-latency memory buffer synchronizing pattern generator outputs with digitizer inputs using matched C/C and CQ/CQ paths.

Use Value: 165-ball FBGA footprint allows dense memory stacking on PXI Express modules - supports >100 MS/s sustained capture rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR-II+ (250 MHz), x9, 165-BGA, but requires 1.5V core and lacks DOFF pin for DLL disable Designed for telecom control plane; no DLL-off fallback mode limits interoperability with legacy QDR-I controllers Select when maximum 250 MHz stability is required over extended temperature range (−40°C to +85°C)
ISSI IS61WV102418B 18-Mbit synchronous SRAM (166 MHz), x18, SOJ-54 - single-port, SDR, no DDR or echo clocks Cost-optimized for non-real-time buffering; lacks concurrent read/write capability and burst-2 efficiency Select only for low-bandwidth, space-constrained designs where QDR-II features are unnecessary

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1425JV18 uniquely supports DLL-on/off mode switching, 267 MHz operation, and full x9 byte-write granularity - making it optimal for upgrade paths from QDR-I and mixed-protocol system integration.

Availability

CY7C1425JV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and high-speed test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1425JV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1425JV18 belongs to Cypress's QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in networking and telecom infrastructure where concurrent read/write bandwidth is critical.

FAQ

What is the function of the DOFF pin on CY7C1425JV18?

The DOFF (DLL Turn Off) pin is an active-low input that disables the internal Delay Lock Loop. When pulled low, the device reverts to QDR-I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. For normal QDR-II operation, DOFF must be pulled up via a ≤10 kΩ resistor to VDDQ.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external precision resistor (typically 100 Ω) to ground, enabling automatic output impedance calibration. This adjusts the drive strength of Q[8:0], CQ, and CQ outputs to precisely 50 Ω (0.2 × RQ), ensuring signal integrity on controlled-impedance PCB traces without manual termination design.

Can CY7C1425JV18 operate with only a single clock domain?

Yes - the device supports single-clock-mode operation where K and C are tied together (and K and C likewise), allowing simplified timing with FPGAs lacking differential clock routing. In this mode, data is clocked on K/K edges for both read and write, and echo clocks CQ/CQ derive from K/K instead of C/C.

What is the purpose of BWS0 in the x9 configuration?

BWS0 is the sole byte write select for the 9-bit data path. When asserted low, it enables writing all 9 bits of D[8:0] to the addressed location; when high, the write is inhibited. Unlike nibble-select variants, BWS0 provides atomic 9-bit write control - essential for error-free header updates in packet-processing pipelines.

CY7C1425JV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1425JV18-250BZI FAQ

1.How can I place an order for CY7C1425JV18-250BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1425JV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1425JV18-250BZI reliable?

The price and inventory of CY7C1425JV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425JV18-250BZI is usually 5 days.

3.What payment methods are accepted for CY7C1425JV18-250BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1425JV18-250BZI transactions.

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4.How is shipping managed for CY7C1425JV18-250BZI?

CY7C1425JV18-250BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1425JV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1425JV18-250BZI?

For technical support, including CY7C1425JV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425JV18-250BZI requirements.

6.How does Aetrix verify that CY7C1425JV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1425JV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425JV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1425JV18-250BZI?

All CY7C1425JV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425JV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1425JV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1425JV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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