Infineon Technologies CY7C1425KV18-250BZCT

Overview

CY7C1425KV18-250BZCT from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 4M × 9 organization, 250 MHz maximum operating frequency (4 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces on both, two-word burst architecture, and echo clocks (CQ/CQ) for timing margin improvement in high-speed memory subsystems used in network packet buffers and switch fabric controllers.

For engineers reviewing the CY7C1425KV18-250BZCT datasheet, CY7C1425KV18-250BZCT pinout, CY7C1425KV18-250BZCT application, or CY7C1425KV18-250BZCT equivalent, key selection considerations include its 250 MHz operation under 1.8 V core, 165-ball FBGA package, DOFF-controlled read latency (1.5-cycle or 1-cycle), and HSTL-compatible output drive for backplane-adjacent memory interfaces.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data capture and C/C for output data strobing, enabling true concurrent read/write operations without bus turnaround. Its internal self-timed write circuitry eliminates external write pulse timing constraints, while the PLL ensures precise data placement relative to echo clocks.

The device supports depth expansion via RPS/WPS and byte-write select (BWS0), maintains full data coherency across ports, and delivers deterministic 1.5-cycle read latency when DOFF = HIGH-critical for pipeline-synchronized packet processing in telecom line cards and FPGA-based accelerators.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36125L10BG and IS61WV102418BLL-250BLI, CY7C1425KV18-250BZCT uniquely combines 36-Mbit density, DOFF-selectable latency, and integrated echo clocks in the industry-standard 165-ball FBGA-making it optimal for space-constrained, high-throughput telecom and networking hardware.

Availability

CY7C1425KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, switch fabric controller memory, and FPGA-based accelerator cache applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1425KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1425KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for ultra-low-latency, high-bandwidth memory interfacing in networking infrastructure equipment where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1425KV18-250BZCT?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for improved timing margin in high-speed systems; when LOW, it enables 1-cycle latency for minimal pipeline delay. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains active until changed.

Can CY7C1425KV18-250BZCT operate with only one clock (K) instead of differential K/K?

Yes-the device supports single-clock mode where K serves as both positive and negative clock input (K = K). In this mode, C and C must also be tied together, and echo clocks CQ/CQ derive from K. However, differential clocking is strongly recommended for 250 MHz operation to suppress common-mode noise and meet setup/hold timing budgets.

How does the BWS0 pin enable partial-word writes?

BWS0 is an active-LOW byte write select that gates D[8:0] during write operations. When deasserted (HIGH), the corresponding 9-bit data byte is ignored and memory contents remain unchanged. This allows atomic partial updates without requiring a read-modify-write sequence-critical for maintaining consistency in multi-threaded packet processing.

Is the 165-ball FBGA package of CY7C1425KV18-250BZCT compatible with standard reflow profiles?

Yes-the 165-ball FBGA (13 × 15 × 1.4 mm) uses SnAgCu (SAC305) solder balls and complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3. Standard lead-free reflow profiles (peak 260°C, 60–90 sec above 217°C) are supported; pre-bake is required if exposed to ambient >30°C/60% RH for >168 hours.