Infineon Technologies CY7C1425KV18-250BZXI
- Part No.:
- CY7C1425KV18-250BZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1425KV18-250BZXI.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1425KV18 from Cypress Semiconductor is a 4M × 9 (36-Mbit), 1.8 V QDR® II SRAM with separate read/write ports, 333 MHz clock operation (666 MHz DDR data rate), 1.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent burst reads/writes for high-bandwidth networking buffers in packet switching ASICs.
For engineers reviewing the CY7C1425KV18 datasheet, CY7C1425KV18 pinout, CY7C1425KV18 application, or CY7C1425KV18 equivalent, key selection criteria include dual-clock DDR timing, echo clock support (CQ/CQ), HSTL-18 I/O compatibility, and synchronous self-timed write architecture.
Technical Context
The CY7C1425KV18 implements a true two-port QDR II architecture: independent K/K clocks latch address and data on rising edges for write operations, while C/C clocks control output timing with echo clocks (CQ/CQ) aligned to output data edges. This eliminates bus turnaround and enables full-duplex memory access.
It uses a pipelined synchronous design with internal address multiplexing (21-bit A[20:0]), DOFF-selectable read latency (1.5-cycle or 1-cycle), and programmable byte write selects (BWS0 only). Core VDD = 1.8 V ±0.1 V; I/O VDDQ supports 1.4–1.8 V, enabling interoperability with both 1.5 V and 1.8 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (4M × 9 configuration) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR bandwidth per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) - balances timing margin and throughput in high-speed switch fabric |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports mixed-voltage board designs with HSTL-18 compliance |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in telecom modules |
| Core Supply | VDD = 1.8 V ± 0.1 V - low-power, noise-sensitive core rail requiring tight regulation |
| Burst Length | Two-word burst - fixed burst mode simplifies controller FIFO management and reduces address overhead |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit wide data bus sampled on rising edge of K clock; supports byte-level writes via BWS0 |
| Q[8:0] | Synchronous read data output | 9-bit wide tristatable outputs driven on rising edges of C/C clocks; automatically disabled when RPS is deasserted |
| K, K | Write/read address & data capture clocks | Differential pair latching all synchronous inputs (A, D, WPS, BWS0); rising-edge triggered only |
| C, C | Read data output clocks | Differential pair controlling Q[8:0] timing; used with CQ/CQ for source-synchronous capture at controller |
| CQ, CQ | Output echo clocks | Free-running copies of C/C, phase-aligned to Q[8:0] edges - enable precise data capture without board trace length matching |
| WPS, RPS | Port select controls | Active-low enables for write/read ports; allow independent port activation and depth expansion with multiple devices |
| DOFF | Read latency mode select | High = 1.5-cycle latency (recommended for 333 MHz operation); Low = 1-cycle latency (for lower-frequency use) |
| ZQ | Impedance calibration reference | Connects to 240 Ω ±1% external resistor to ground for HSTL output driver impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delays - enables full-duplex 666 MT/s sustained bandwidth per port |
| Two-word burst architecture | Reduces address bus toggling by 50% vs. single-word access - lowers controller logic complexity and power |
| Integrated PLL | Ensures sub-100 ps jitter on C/C and CQ/CQ outputs - meets setup/hold timing at 666 MHz DDR |
| JTAG 1149.1 test port | Enables boundary scan testing of interconnects in dense BGA layouts without physical probe access |
| Variable drive HSTL outputs | Programmable strength via ZQ calibration - matches transmission line impedance to minimize reflections on >10 cm traces |
Applications
| Packet Buffer Memory | Network Processor Interface |
|---|---|
Use Scenario: Line-rate buffering of ingress/egress packets in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-level packet buffer with zero-turnaround concurrent read/write. Use Value: 666 MT/s DDR bandwidth per port sustains full line-rate traffic without backpressure, reducing packet loss under burst load. | Use Scenario: High-speed descriptor table storage between network processor cores and DMA engines. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing deterministic 1.5-cycle read latency for descriptor fetches. Use Value: DOFF-configurable latency allows timing closure at 333 MHz while maintaining coherency across parallel descriptor queues. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
Use Scenario: Real-time symbol interleaving/deinterleaving buffers in 4G/5G baseband FPGAs. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with FPGA fabric using echo clocks (CQ/CQ) for source-synchronous capture. Use Value: CQ/CQ alignment eliminates flight-time skew across 16+ signal lanes - enables reliable 666 MT/s operation without trace-length matching. | Use Scenario: High-fidelity waveform pattern storage in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic-latency memory delivering repeatable timing margins for sub-nanosecond edge placement. Use Value: Synchronous self-timed writes guarantee consistent write completion time - critical for jitter-free pattern generation at 333 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PA | 36-Mbit QDR II+, 250 MHz max, ×9, 165-ball FBGA, VDD = 1.8 V, VDDQ = 1.5 V only | Limited to 1.5 V I/O; no DOFF latency selection; lacks ZQ calibration | Choose for cost-sensitive 250 MHz systems where 1.5 V-only I/O is acceptable and echo clock precision is less critical |
| ISSI IS61WV102418BLL-150BLI | 18-Mbit QDR II, 1M × 18, 150 MHz max, 165-ball FBGA, VDD/VDDQ = 1.8 V | Half density, lower speed, no CQ/CQ echo clocks, no JTAG | Choose for legacy 150 MHz designs needing smaller footprint and simpler interface; not suitable for 333 MHz line-rate buffering |
Compared with IDT72T3615L10PA and IS61WV102418BLL-150BLI, the CY7C1425KV18 uniquely supports 333 MHz operation with configurable latency, echo clocks for skew-insensitive capture, and ZQ-calibrated HSTL outputs - making it the only option for new 10G+ switch fabric designs requiring guaranteed timing closure.
Availability
CY7C1425KV18 is available at Aetrix Electronics and suitable for packet switching buffers, network processor descriptor tables, and telecom baseband interleaving requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for CY7C1425KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II SRAM product line was designed specifically for ultra-low-latency, high-throughput buffering in networking and telecom infrastructure - prioritizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.
FAQ
What is the function of the DOFF pin on CY7C1425KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency, which provides additional timing margin for reliable operation at 333 MHz. When LOW, it selects 1-cycle latency for lower-frequency applications. This setting directly affects the C/C clock-to-Q[8:0] output delay and must be set before initialization.
Can CY7C1425KV18 operate with only a single clock domain (K only)?
Yes - the device supports single-clock mode where K serves as both address/data capture and output clock. In this mode, C/C are unused, and CQ/CQ are generated relative to K. However, dual-clock mode (K/K + C/C) is required to achieve full 333 MHz performance with echo clock benefits; single-clock mode limits maximum frequency and forfeits skew compensation.
How does the ZQ pin function during system operation?
ZQ connects to a 240 Ω ±1% external resistor to ground and enables on-die impedance calibration of HSTL output drivers. Calibration occurs automatically at power-up and can be retriggered via JTAG. Proper ZQ termination ensures output driver impedance matches PCB trace impedance (typically 50 Ω), minimizing signal reflections and maintaining signal integrity at 666 MT/s.
Is CY7C1425KV18 pin-compatible with other devices in the CY7C14xxKV18 family?
No - although all share the same 165-ball FBGA package, pin assignments differ significantly across CY7C1425KV18 (×9), CY7C1412KV18 (×18), and CY7C1414KV18 (×36) due to differing data bus widths, byte write select counts (BWS0 only vs. BWS[3:0]), and address bit requirements (A[20:0] vs. A[19:0]/A[18:0]). Board layout is not interchangeable.
CY7C1425KV18-250BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1425KV18-250BZXI FAQ
1.How can I place an order for CY7C1425KV18-250BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1425KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1425KV18-250BZXI reliable?
The price and inventory of CY7C1425KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425KV18-250BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1425KV18-250BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1425KV18-250BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1425KV18-250BZXI?
CY7C1425KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1425KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1425KV18-250BZXI?
For technical support, including CY7C1425KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425KV18-250BZXI requirements.
6.How does Aetrix verify that CY7C1425KV18-250BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1425KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425KV18-250BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1425KV18-250BZXI?
All CY7C1425KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425KV18-250BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1425KV18-250BZXI part is unused and in its original packaging.
Return procedure for CY7C1425KV18-250BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1425KV18-250BZXI Tags

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M24C02-FMC6TG
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