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Infineon Technologies CY7C1425KV18-333BZXC

Part No.:
CY7C1425KV18-333BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1425KV18-333BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,943

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Product details

Overview

CY7C1425KV18-333BZXC from Cypress Semiconductor is a 4M × 9 (36-Mbit), 1.8 V QDR® II SRAM with independent read/write ports, 333 MHz clock frequency, DDR interfaces on both ports (666 MHz data rate), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers concurrent burst reads/writes for high-bandwidth networking buffers in packet forwarding engines.

For engineers reviewing the CY7C1425KV18-333BZXC datasheet, CY7C1425KV18-333BZXC pinout, CY7C1425KV18-333BZXC application, or CY7C1425KV18-333BZXC equivalent, key selection criteria include dual-clock DDR timing, echo clock support (CQ/CQ), DOFF-configurable 1-cycle vs. 1.5-cycle read latency, HSTL-compatible 1.4–1.8 V I/O, and JTAG 1149.1 test access.

Technical Context

This QDR II SRAM implements separate synchronous read and write pipelines with independent address latching on rising edges of K/K clocks and output registration on C/C clocks. Its two-word burst architecture ensures deterministic 2×9-bit data transfers per access without bus turnaround.

The device integrates a PLL for precise data placement, supports programmable impedance via ZQ pin, and uses echo clocks (CQ/CQ) referenced to C/C to simplify high-speed data capture. DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (4M × 9 organization)
Clock Frequency 333 MHz - enables 666 MT/s DDR data rate on both read and write ports
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Supply Voltages Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system interfacing
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing and thermal management
Interface Standard HSTL Class I - ensures signal integrity at 666 MHz with variable drive strength
JTAG Support IEEE 1149.1 compliant TAP controller - enables boundary scan testing and debug in production systems

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free finish (BZXC suffix).

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data inputs Sampled on rising edge of K clock; 9-bit parallel input for burst writes
Q[8:0] Synchronous read data outputs Driven on rising edges of C/C clocks; tristated when RPS is deasserted
WPS Write port select (active LOW) Enables write operation; ignores D[8:0] when deasserted
RPS Read port select (active LOW) Initiates read burst; tristates Q[8:0] after completion when deasserted
K / K Positive/negative input clocks Capture all synchronous inputs (address, control, data); rising edges define timing reference
C / C Positive/negative output clocks Register and drive Q[8:0]; used with CQ/CQ to deskew flight time across PCB traces
CQ / CQ Echo clocks (free-running) Synchronized to C/C; provide receiver-side timing reference for source-synchronous capture
DOFF Read latency mode control HIGH → 1.5-cycle latency; LOW → 1-cycle latency - configures pipeline depth for timing closure
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground for HSTL output driver calibration
TCK/TMS/TDI/TDO JTAG test access port Supports IEEE 1149.1 boundary scan for interconnect and functional test

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround overhead - enables true concurrent access for full-duplex memory traffic
Two-word burst architecture Guarantees 2×9-bit sequential data transfer per address cycle - simplifies burst-length control logic
Programmable read latency (DOFF) Allows trade-off between timing margin (1.5-cycle) and pipeline efficiency (1-cycle) in system-level timing closure
HSTL Class I outputs with ZQ calibration Ensures consistent 25–35 Ω driver impedance across voltage/temperature - critical for signal integrity at 666 MHz
Echo clock support (CQ/CQ) Provides receiver-synchronized timing reference - reduces setup/hold uncertainty in high-speed FPGA-to-SRAM links
JTAG 1149.1 boundary scan Enables automated PCB test coverage for ball-grid array solder joints and interconnect verification

Applications

Network Packet Buffer High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit line cards.

IC Role / Device Role / Timing Role: Dual-port buffer providing simultaneous header read (for classification) and payload write (for buffering) at 666 MT/s.

Use Value: Eliminates arbitration delay between control-plane and data-plane paths, enabling sub-100 ns packet processing latency.

Use Scenario: Capturing real-time waveform samples in automated test equipment with >500 MS/s sampling rates.

IC Role / Device Role / Timing Role: High-throughput acquisition memory accepting interleaved sample streams via write port while feeding analysis logic via read port.

Use Value: Sustains continuous 666 MT/s sustained bandwidth without dead cycles - essential for gap-free long-duration captures.

Baseband Signal Processing Graphics Frame Buffer Interface

Use Scenario: Interfacing FPGA-based digital pre-distortion (DPD) engines with RF transceiver ICs in 5G massive MIMO radios.

IC Role / Device Role / Timing Role: Low-latency coefficient exchange buffer synchronizing transmit/receive path processing pipelines.

Use Value: 1-cycle read latency (DOFF = LOW) minimizes feedback loop delay - directly improving DPD convergence speed and ACLR performance.

Use Scenario: Serving as intermediate frame buffer between GPU render engine and display controller in embedded vision systems.

IC Role / Device Role / Timing Role: Concurrently accepting rendered tiles (write port) while supplying pixel streams to timing controller (read port).

Use Value: Two-word burst + DDR interface delivers 1.2 GB/s effective bandwidth - sufficient for 1080p60 RGB888 with zero wait states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 4M × 9, 100 MHz max clock (200 MT/s DDR), LVDS I/O, no echo clocks or DOFF latency control Limited to lower-bandwidth control-plane buffering; lacks source-synchronous timing features for >500 MT/s links Select when system clock < 200 MHz and cost sensitivity outweighs bandwidth needs.
ISSI IS61WV102418BLL-150BLI 1M × 18, 150 MHz async SRAM, single-port, CMOS I/O, no DDR or burst capability Requires external arbitration logic for concurrent access; unsuitable for deterministic high-throughput streaming Choose only for legacy designs where QDR timing complexity must be avoided and bandwidth ≤ 300 MB/s suffices.

Compared with IDT72T36120L10BG and IS61WV102418BLL-150BLI, CY7C1425KV18-333BZXC uniquely supports 666 MT/s DDR concurrency, echo-clock–assisted timing closure, and configurable read latency - making it the only viable option for new 5G baseband and 10G+ packet processing designs.

Availability

CY7C1425KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, and 5G baseband signal processing requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1425KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

The QDR II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, test equipment, and wireless infrastructure - emphasizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.

FAQ

What is the function of the DOFF pin on CY7C1425KV18-333BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-skew layouts; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of C/C clock cycles between address assertion and valid Q[8:0] output.

How does the CQ/CQ echo clock improve system timing?

CQ and CQ are free-running output clocks synchronized to C and C, respectively. They provide a receiver-side timing reference that tracks board trace skew and jitter, allowing FPGA or ASIC receivers to latch Q[8:0] using source-synchronous timing - reducing setup/hold uncertainty by up to 150 ps compared to system-clock–based capture.

Can CY7C1425KV18-333BZXC operate with only one clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together). In this configuration, all inputs are sampled and outputs driven on K/K edges, eliminating need for separate read/write clock generation but reducing maximum achievable bandwidth by ~15% due to shared clock path constraints.

What is the purpose of the ZQ pin and how must it be connected?

ZQ is the impedance calibration reference terminal. It must be connected to a precision 240 Ω resistor to ground to enable internal calibration of HSTL output drivers. Without this connection, output impedance varies significantly with voltage/temperature, risking signal integrity failure above 400 MT/s.

CY7C1425KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1425KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1425KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1425KV18-333BZXC reliable?

The price and inventory of CY7C1425KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1425KV18-333BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1425KV18-333BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1425KV18-333BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1425KV18-333BZXC?

CY7C1425KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1425KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1425KV18-333BZXC?

For technical support, including CY7C1425KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1425KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1425KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1425KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1425KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1425KV18-333BZXC?

All CY7C1425KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1425KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1425KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1425KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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