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Infineon Technologies CY7C1426AV18-167BZXC

Part No.:
CY7C1426AV18-167BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1426AV18-167BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
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Inventory:3,388

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Product details

Overview

CY7C1426AV18-167BZXC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, operating at 167 MHz (600 Mbps DDR data rate), featuring separate read/write ports, echo clocks (CQ/CQ), and HSTL I/O for high-speed networking buffers and packet memory in telecom line cards.

For engineers reviewing the CY7C1426AV18-167BZXC datasheet, CY7C1426AV18-167BZXC pinout, CY7C1426AV18-167BZXC application, or CY7C1426AV18-167BZXC equivalent, key selection criteria include burst depth (4-word), dual-clock timing (K/K and C/C), DLL-enabled data placement accuracy, and 165-ball FBGA package compatibility with high-density PCB routing.

Technical Context

This device implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Each port uses dedicated DDR interfaces: write data sampled on rising edges of K/K, read data driven on rising edges of C/C, with echo clocks CQ/CQ referenced to output clocks for precise capture timing.

The internal Delay Lock Loop (DLL) aligns output data to C/C edges within ±50 ps jitter, while variable-drive HSTL outputs support impedance-matched signaling at 1.4 VDDQ. Core logic operates at 1.8 V ±0.1 V, I/O at 1.4–1.8 V, and write operations are self-timed with synchronous port selects (WPS/RPS) and byte-level write enables (BWS0).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (4M × 9 configuration)
Maximum Clock Frequency 167 MHz - defines maximum sustained burst throughput of 600 MB/s (4 × 9-bit words per cycle × 167 MHz)
Data Interface Double Data Rate (DDR) on both read and write ports - enables 600 Mbps effective data rate without bus turnaround
Supply Voltages Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL-compatible drivers
Package 165-ball FBGA (15 × 17 × 1.4 mm) - provides thermal and signal integrity for high-speed parallel memory interconnects
Timing Architecture Delay Lock Loop (DLL) synchronized to C/C clocks - ensures sub-cycle data valid window for reliable capture at 600 Mbps
Write Control Synchronous self-timed writes with WPS and BWS0 - guarantees atomic 9-bit word updates without external write pulse timing constraints

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and bottom-side thermal pad (not electrically connected). Pinout optimized for differential clock routing (K/K, C/C), echo clock symmetry (CQ/CQ), and HSTL I/O termination via ZQ calibration.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data input 9-bit parallel data latched on rising edge of K/K; supports full-word or partial-byte writes via BWS0
Q[8:0] Synchronous read data output 9-bit parallel data driven on rising edge of C/C; automatically tri-stated when RPS is deasserted
K, K Positive/negative input clocks Edge-aligned differential pair controlling all synchronous inputs (address, WPS, RPS, BWS0); only rising edges used
C, C Positive/negative output clocks Differential pair clocking Q[8:0] outputs; enables flight-time deskewing across multiple devices on same bus
CQ, CQ Echo clocks Free-running copies of C/C, phase-aligned to output data edges - simplify receiver capture timing in FPGA/ASIC designs
ZQ Output impedance calibration input Connects to external 240 Ω resistor to GND to tune Q[8:0] and CQ/CQ output drive strength to match 50 Ω trace impedance
WPS Write port select Active-low signal enabling write transactions; sampled on K rising edge - controls whether D[8:0] is latched into memory array
RPS Read port select Active-low signal initiating read burst; sampled on K rising edge - triggers 4-word sequential read from addressed location
BWS0 Byte write select Active-low control for 9-bit write mask; when deasserted, entire D[8:0] is ignored - enables partial-word updates without read-modify-write
DOFF DLL disable input Grounding disables internal DLL; shifts output timing to fixed delay mode - used only for debug or low-jitter test modes

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead and data contention - enables concurrent 600 MB/s read+write in telecom packet buffering
4-word burst architecture Reduces address bus toggling frequency by 4× - lowers EMI and simplifies controller address generation logic
HSTL Class I compatible I/O Supports 1.4 V signaling with programmable drive strength - ensures signal integrity on >10 cm traces at 600 Mbps
JTAG 1149.1 test access port Enables boundary-scan testing of SRAM interconnects without functional access - critical for high-reliability telecom PCB validation
On-chip DLL for data alignment Maintains <±50 ps output-to-clock skew across temperature/voltage - removes need for external delay tuning components

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with zero-latency read-after-write requirements.

IC Role / Device Role / Timing Role: Dedicated QDR-II SRAM acting as dual-port FIFO buffer - reads packet headers while simultaneously writing payload fragments.

Use Value: 4M × 9 organization supports 36-Mbit deep buffering; 167 MHz DDR interface delivers 600 MB/s sustained bandwidth for 10Gbps line-rate processing.

Use Scenario: Capturing high-resolution waveform samples from multi-channel ADCs in automated test equipment (ATE) with deterministic latency.

IC Role / Device Role / Timing Role: Synchronous burst memory staging raw digitized data before DSP analysis - write port accepts ADC stream, read port feeds FFT engine.

Use Value: Independent read/write ports enable real-time capture and analysis without pipeline stalls; echo clocks (CQ/CQ) synchronize FPGA capture logic to ±25 ps.

Baseband Signal Processing Optical Transport Network (OTN) Framing

Use Scenario: Temporary storage of IQ samples between digital down-conversion (DDC) and channelization blocks in wireless baseband FPGAs.

IC Role / Device Role / Timing Role: Low-latency memory buffer interfacing between hardened DDC IP and programmable channelizer - K/K clocks aligned to sample clock domain.

Use Value: DLL-aligned CQ/CQ outputs eliminate setup/hold violations at 600 Mbps; 1.8 V core reduces power vs. 2.5 V QDR-I alternatives in dense RF modules.

Use Scenario: Holding OTU2/OTU3 frame overhead and payload segments during multiplexing/demultiplexing in optical line cards.

IC Role / Device Role / Timing Role: Burst-access memory supporting 4-word OTN frame header reads and payload writes in parallel - RPS/WPS controlled by framer ASIC state machine.

Use Value: BWS0 enables selective update of just the BIP-8 byte in OTN frames without full-frame rewrite; ZQ calibration maintains signal fidelity over 15-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit QDR-II+, 100 MHz max, 165-ball FBGA, 1.8 V core, but lacks echo clocks (CQ/CQ) and ZQ calibration Requires external delay tuning for data capture; unsuitable for systems needing guaranteed <100 ps clock-to-data alignment Select when cost sensitivity outweighs timing margin requirements and DLL-free operation is acceptable
ISSI IS61WV102418BLL-167BLI 18-Mbit QDR-II, 167 MHz, 119-ball FBGA, 1.8 V core, no BWS support, single-ended clocks only Half density limits frame buffering depth; no byte-write masking complicates OTN overhead updates Choose only for space-constrained designs where 18-Mbit capacity suffices and BWS functionality is unused

Compared with IDT72T3615L10PA and IS61WV102418BLL-167BLI, CY7C1426AV18-167BZXC uniquely delivers full 36-Mbit depth with echo clocks, ZQ calibration, and BWS0 - essential for telecom systems requiring deterministic timing, long-term signal integrity, and partial-word updates.

Availability

CY7C1426AV18-167BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, baseband signal processing, and optical transport network framing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1426AV18-167BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets, with headquarters in San Jose, CA.

CY7C1426AV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, dual-port memory access in 10G/40G networking infrastructure and high-speed instrumentation.

FAQ

What is the function of the ZQ pin on CY7C1426AV18-167BZXC?

The ZQ pin calibrates output driver impedance for Q[8:0] and CQ/CQ signals. It must be connected to a 240 Ω resistor to ground to set output impedance to 50 Ω (0.2 × RQ), ensuring signal integrity on controlled-impedance PCB traces. Direct connection to VDDQ enables minimum drive strength; floating or grounding ZQ is prohibited and causes undefined behavior.

Can CY7C1426AV18-167BZXC operate with only a single clock (K) instead of differential K/K?

Yes - the device supports single-clock mode where K serves as both positive and negative input clock. In this mode, CQ is generated relative to K, and data is clocked using K for both input sampling and output driving. However, differential K/K is required to achieve full 167 MHz timing margins and minimize jitter-induced setup/hold violations in production systems.

How does the BWS0 signal affect write operations in CY7C1426AV18-167BZXC?

BWS0 is an active-low byte write select that gates the entire 9-bit D[8:0] bus. When asserted (LOW), D[8:0] is written to memory; when deasserted (HIGH), the write operation is ignored and memory contents remain unchanged. Unlike nibble-select variants, BWS0 provides full 9-bit granularity - no partial-byte masking within the 9-bit word is supported.

Is the DOFF pin required to be tied to a specific voltage in normal operation?

In normal operation, DOFF must be tied to VDDQ (1.4–1.8 V) to enable the internal Delay Lock Loop. Leaving DOFF floating or connecting it to ground disables the DLL, shifting output timing to a fixed-delay mode with degraded skew performance (>200 ps variation). For production use, DOFF is always VDDQ-connected unless DLL bypass is explicitly required for test diagnostics.

CY7C1426AV18-167BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1426AV18-167BZXC FAQ

1.How can I place an order for CY7C1426AV18-167BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1426AV18-167BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1426AV18-167BZXC reliable?

The price and inventory of CY7C1426AV18-167BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426AV18-167BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1426AV18-167BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426AV18-167BZXC transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C1426AV18-167BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1426AV18-167BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1426AV18-167BZXC?

For technical support, including CY7C1426AV18-167BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426AV18-167BZXC requirements.

6.How does Aetrix verify that CY7C1426AV18-167BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1426AV18-167BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426AV18-167BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1426AV18-167BZXC?

All CY7C1426AV18-167BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426AV18-167BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1426AV18-167BZXC part is unused and in its original packaging.

Return procedure for CY7C1426AV18-167BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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