Infineon Technologies CY7C1426AV18-200BZXC
- Part No.:
- CY7C1426AV18-200BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1426AV18-200BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1426AV18-200BZXC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, enabling concurrent transactions in high-bandwidth networking and packet buffering applications.
For engineers reviewing the CY7C1426AV18-200BZXC datasheet, CY7C1426AV18-200BZXC pinout, CY7C1426AV18-200BZXC application, or CY7C1426AV18-200BZXC equivalent, key selection criteria include burst depth (4-word), echo clock support (CQ/CQ), HSTL-compatible I/O drive, DLL-based data alignment, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.
Technical Context
The device uses synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its dual-port design ensures full data coherency: write data becomes immediately available for subsequent reads after pipeline latency.
Each access delivers four sequential 9-bit words per port in two clock cycles, leveraging echo clocks (CQ/CQ) to deskew flight time mismatches across memory channels. The integrated Delay Lock Loop (DLL) aligns output data edges to C/C clocks within ±50 ps jitter, critical for 600 Mbps DDR signaling at 200 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (4M × 9 configuration) |
| Max Clock Frequency | 200 MHz - determines maximum sustained bandwidth of 1.44 GB/s (9 bits × 4 words × 200 MHz × 2 edges) |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines minimum power rail stability requirement for internal logic and array operation |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - sets compatible HSTL-18 or SSTL-18 interface voltage for external controller |
| Burst Length | 4-word - reduces address bus toggling frequency by 75% versus single-word access, easing routing and timing closure |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB layouts with controlled impedance trace routing for DDR signals |
| Output Interface | HSTL Class I - provides 25 Ω matched drive strength for point-to-point or fly-by topologies up to 600 Mbps |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | Sampled on rising edge of K/K; 9-bit parallel data path for burst writes |
| Q[8:0] | Synchronous read data outputs | Driven on rising edge of C/C; tri-stated when RPS is deasserted |
| WPS | Write port select (active LOW) | Enables write transaction; ignores D[8:0] when deasserted |
| RPS | Read port select (active LOW) | Initiates 4-word burst read; auto-tri-states Q[8:0] after completion |
| K / K | Positive/negative input clocks | Capture all synchronous inputs (address, WPS, RPS, BWS); define system timing reference |
| C / C | Positive/negative output clocks | Launch Q[8:0] data; used with CQ/CQ for board-level skew compensation |
| CQ / CQ | Echo clocks referenced to C/C | Free-running copies of C/C; enable source-synchronous capture at controller side |
| ZQ | Output impedance calibration input | Connects to 240 Ω resistor to GND to tune Q[8:0]/CQ/CQ drive strength to 48 Ω ±10% |
| DOFF | DLL disable control (active LOW) | Grounding disables DLL; shifts output timing to fixed delay mode (not recommended for 200 MHz operation) |
| TCK/TMS/TDI/TDO | JTAG 1149.1 test access port | Supports boundary scan testing and in-system programming of configuration registers |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead and prevents data contention in full-duplex systems |
| 4-word burst architecture | Reduces effective address bus frequency by factor of 4, simplifying controller address generation logic |
| Double Data Rate (DDR) I/O | Delivers 600 Mbps per data line using 200 MHz clocks - doubles throughput vs. SDR at same frequency |
| Delay Lock Loop (DLL) | Aligns Q[8:0] output edges to C/C clock zero-crossings with < ±50 ps jitter for reliable sampling margin |
| Variable-drive HSTL outputs | Configurable drive strength via ZQ calibration enables optimal signal integrity across varied trace lengths and loads |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks. Use Value: Concurrent read/write capability enables real-time packet modification without stalling either datapath, sustaining 1.44 GB/s aggregate bandwidth at 200 MHz. |
Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-speed acquisition memory interfaced to FPGA-based pattern generator, clocked by precision 200 MHz reference. Use Value: Echo clocks (CQ/CQ) allow FPGA to latch Q[8:0] with deterministic setup/hold margins despite PCB flight time variation across 165-ball array. |
| Telecom Baseband Processing | Avionics Data Recorder Buffer |
|
Use Scenario: Temporary storage of processed channel symbols in LTE/5G baseband units prior to modulation mapping. IC Role / Device Role / Timing Role: Burst-access memory bridging DSP cores and RF front-end controllers, operating in pipelined read-modify-write mode. Use Value: 4-word burst minimizes address bus activity during symbol stream processing, reducing EMI and simplifying timing closure on dense RF-adjacent PCBs. |
Use Scenario: Buffered recording of flight telemetry (ARINC 429, MIL-STD-1553) in certified avionics black boxes requiring deterministic write latency. IC Role / Device Role / Timing Role: Deterministic-latency SRAM with self-timed writes ensuring no data loss during power interruption events. Use Value: Synchronous self-timed write circuitry guarantees completion within 2.5 ns of WPS assertion, meeting DO-254 deterministic timing requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61QW25618A-200TQLI | 256K × 18 organization (4.6 Mbit), 200 MHz, 1.5 V core, LVDS outputs | Limited density and different I/O standard; requires level-shifting for HSTL host interfaces | Use only if lower density suffices and LVDS interface matches controller capability |
| MT47H64M16HR-25E | DDR2 SDRAM (1 Gbit), 250 MHz, 1.8 V, requires refresh and command sequencing | Higher latency, non-deterministic access, and external controller complexity for burst management | Select only when cost-per-bit outweighs determinism and dual-port concurrency needs |
Compared with IS61QW25618A-200TQLI and MT47H64M16HR-25E, CY7C1426AV18-200BZXC offers guaranteed 4M × 9 depth, true dual-port concurrency, and HSTL-native interface-making it uniquely suited for deterministic, low-latency, full-duplex buffering where DDR2 or smaller QDR-II variants fall short.
Availability
CY7C1426AV18-200BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and avionics data recorder buffer applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1426AV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, headquartered in San Jose, CA.
This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth, dual-port buffering in networking infrastructure and real-time signal processing systems.
FAQ
What is the function of the ZQ pin on CY7C1426AV18-200BZXC?
The ZQ pin calibrates output driver impedance for Q[8:0], CQ, and CQ signals. When connected to a 240 Ω resistor to ground, it tunes output resistance to 48 Ω ±10%, matching typical PCB trace impedances. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and causes undefined output behavior.
Can CY7C1426AV18-200BZXC operate with only one clock (K) instead of K/K and C/C pairs?
Yes - the device supports single-clock mode where K serves as both input and output clock, and Q[8:0] is driven on K's rising edge. However, this disables echo clock functionality (CQ/CQ) and eliminates flight-time deskewing capability, reducing timing margin in multi-device systems and limiting maximum reliable data rate to ≤167 MHz per published specs.
How does the 4-word burst architecture affect address bus utilization?
The 4-word burst reduces required address transitions by 75%: a single address initiates four consecutive 9-bit word reads/writes. For example, accessing 16 words requires only four address changes instead of sixteen, lowering address bus toggle rate, EMI, and controller logic complexity while maintaining full 36-Mbit capacity utilization.
Is the DOFF pin required to be tied high in normal operation?
Yes - DOFF must be pulled high (to VDDQ) to enable the internal Delay Lock Loop. Leaving DOFF floating or grounded disables the DLL, reverting output timing to fixed-delay mode with significantly degraded setup/hold margins at 200 MHz. Cypress specifies DLL-enabled operation for all rated speed grades including -200.
CY7C1426AV18-200BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1426AV18-200BZXC FAQ
1.How can I place an order for CY7C1426AV18-200BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1426AV18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1426AV18-200BZXC reliable?
The price and inventory of CY7C1426AV18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426AV18-200BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1426AV18-200BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426AV18-200BZXC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1426AV18-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1426AV18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1426AV18-200BZXC?
For technical support, including CY7C1426AV18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426AV18-200BZXC requirements.
6.How does Aetrix verify that CY7C1426AV18-200BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1426AV18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426AV18-200BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1426AV18-200BZXC?
All CY7C1426AV18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426AV18-200BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1426AV18-200BZXC part is unused and in its original packaging.
Return procedure for CY7C1426AV18-200BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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