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Infineon Technologies CY7C1426AV18-200BZXC

Part No.:
CY7C1426AV18-200BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1426AV18-200BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,669

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Product details

Overview

CY7C1426AV18-200BZXC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, 200 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, enabling concurrent transactions in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1426AV18-200BZXC datasheet, CY7C1426AV18-200BZXC pinout, CY7C1426AV18-200BZXC application, or CY7C1426AV18-200BZXC equivalent, key selection criteria include burst depth (4-word), echo clock support (CQ/CQ), HSTL-compatible I/O drive, DLL-based data alignment, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The device uses synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its dual-port design ensures full data coherency: write data becomes immediately available for subsequent reads after pipeline latency.

Each access delivers four sequential 9-bit words per port in two clock cycles, leveraging echo clocks (CQ/CQ) to deskew flight time mismatches across memory channels. The integrated Delay Lock Loop (DLL) aligns output data edges to C/C clocks within ±50 ps jitter, critical for 600 Mbps DDR signaling at 200 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (4M × 9 configuration)
Max Clock Frequency 200 MHz - determines maximum sustained bandwidth of 1.44 GB/s (9 bits × 4 words × 200 MHz × 2 edges)
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply Range VDDQ = 1.4 V to 1.8 V - sets compatible HSTL-18 or SSTL-18 interface voltage for external controller
Burst Length 4-word - reduces address bus toggling frequency by 75% versus single-word access, easing routing and timing closure
Package 165-ball FBGA (15 × 17 × 1.4 mm) - supports high-density PCB layouts with controlled impedance trace routing for DDR signals
Output Interface HSTL Class I - provides 25 Ω matched drive strength for point-to-point or fly-by topologies up to 600 Mbps

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[8:0] Synchronous write data inputs Sampled on rising edge of K/K; 9-bit parallel data path for burst writes
Q[8:0] Synchronous read data outputs Driven on rising edge of C/C; tri-stated when RPS is deasserted
WPS Write port select (active LOW) Enables write transaction; ignores D[8:0] when deasserted
RPS Read port select (active LOW) Initiates 4-word burst read; auto-tri-states Q[8:0] after completion
K / K Positive/negative input clocks Capture all synchronous inputs (address, WPS, RPS, BWS); define system timing reference
C / C Positive/negative output clocks Launch Q[8:0] data; used with CQ/CQ for board-level skew compensation
CQ / CQ Echo clocks referenced to C/C Free-running copies of C/C; enable source-synchronous capture at controller side
ZQ Output impedance calibration input Connects to 240 Ω resistor to GND to tune Q[8:0]/CQ/CQ drive strength to 48 Ω ±10%
DOFF DLL disable control (active LOW) Grounding disables DLL; shifts output timing to fixed delay mode (not recommended for 200 MHz operation)
TCK/TMS/TDI/TDO JTAG 1149.1 test access port Supports boundary scan testing and in-system programming of configuration registers

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead and prevents data contention in full-duplex systems
4-word burst architecture Reduces effective address bus frequency by factor of 4, simplifying controller address generation logic
Double Data Rate (DDR) I/O Delivers 600 Mbps per data line using 200 MHz clocks - doubles throughput vs. SDR at same frequency
Delay Lock Loop (DLL) Aligns Q[8:0] output edges to C/C clock zero-crossings with < ±50 ps jitter for reliable sampling margin
Variable-drive HSTL outputs Configurable drive strength via ZQ calibration enables optimal signal integrity across varied trace lengths and loads

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks.

Use Value: Concurrent read/write capability enables real-time packet modification without stalling either datapath, sustaining 1.44 GB/s aggregate bandwidth at 200 MHz.

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) with sub-nanosecond timing resolution.

IC Role / Device Role / Timing Role: High-speed acquisition memory interfaced to FPGA-based pattern generator, clocked by precision 200 MHz reference.

Use Value: Echo clocks (CQ/CQ) allow FPGA to latch Q[8:0] with deterministic setup/hold margins despite PCB flight time variation across 165-ball array.

Telecom Baseband Processing Avionics Data Recorder Buffer

Use Scenario: Temporary storage of processed channel symbols in LTE/5G baseband units prior to modulation mapping.

IC Role / Device Role / Timing Role: Burst-access memory bridging DSP cores and RF front-end controllers, operating in pipelined read-modify-write mode.

Use Value: 4-word burst minimizes address bus activity during symbol stream processing, reducing EMI and simplifying timing closure on dense RF-adjacent PCBs.

Use Scenario: Buffered recording of flight telemetry (ARINC 429, MIL-STD-1553) in certified avionics black boxes requiring deterministic write latency.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM with self-timed writes ensuring no data loss during power interruption events.

Use Value: Synchronous self-timed write circuitry guarantees completion within 2.5 ns of WPS assertion, meeting DO-254 deterministic timing requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61QW25618A-200TQLI 256K × 18 organization (4.6 Mbit), 200 MHz, 1.5 V core, LVDS outputs Limited density and different I/O standard; requires level-shifting for HSTL host interfaces Use only if lower density suffices and LVDS interface matches controller capability
MT47H64M16HR-25E DDR2 SDRAM (1 Gbit), 250 MHz, 1.8 V, requires refresh and command sequencing Higher latency, non-deterministic access, and external controller complexity for burst management Select only when cost-per-bit outweighs determinism and dual-port concurrency needs

Compared with IS61QW25618A-200TQLI and MT47H64M16HR-25E, CY7C1426AV18-200BZXC offers guaranteed 4M × 9 depth, true dual-port concurrency, and HSTL-native interface-making it uniquely suited for deterministic, low-latency, full-duplex buffering where DDR2 or smaller QDR-II variants fall short.

Availability

CY7C1426AV18-200BZXC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and avionics data recorder buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1426AV18-200BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications markets, headquartered in San Jose, CA.

This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, high-bandwidth, dual-port buffering in networking infrastructure and real-time signal processing systems.

FAQ

What is the function of the ZQ pin on CY7C1426AV18-200BZXC?

The ZQ pin calibrates output driver impedance for Q[8:0], CQ, and CQ signals. When connected to a 240 Ω resistor to ground, it tunes output resistance to 48 Ω ±10%, matching typical PCB trace impedances. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and causes undefined output behavior.

Can CY7C1426AV18-200BZXC operate with only one clock (K) instead of K/K and C/C pairs?

Yes - the device supports single-clock mode where K serves as both input and output clock, and Q[8:0] is driven on K's rising edge. However, this disables echo clock functionality (CQ/CQ) and eliminates flight-time deskewing capability, reducing timing margin in multi-device systems and limiting maximum reliable data rate to ≤167 MHz per published specs.

How does the 4-word burst architecture affect address bus utilization?

The 4-word burst reduces required address transitions by 75%: a single address initiates four consecutive 9-bit word reads/writes. For example, accessing 16 words requires only four address changes instead of sixteen, lowering address bus toggle rate, EMI, and controller logic complexity while maintaining full 36-Mbit capacity utilization.

Is the DOFF pin required to be tied high in normal operation?

Yes - DOFF must be pulled high (to VDDQ) to enable the internal Delay Lock Loop. Leaving DOFF floating or grounded disables the DLL, reverting output timing to fixed-delay mode with significantly degraded setup/hold margins at 200 MHz. Cypress specifies DLL-enabled operation for all rated speed grades including -200.

CY7C1426AV18-200BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1426AV18-200BZXC FAQ

1.How can I place an order for CY7C1426AV18-200BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1426AV18-200BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1426AV18-200BZXC reliable?

The price and inventory of CY7C1426AV18-200BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426AV18-200BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1426AV18-200BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426AV18-200BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1426AV18-200BZXC?

CY7C1426AV18-200BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1426AV18-200BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1426AV18-200BZXC?

For technical support, including CY7C1426AV18-200BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426AV18-200BZXC requirements.

6.How does Aetrix verify that CY7C1426AV18-200BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1426AV18-200BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426AV18-200BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1426AV18-200BZXC?

All CY7C1426AV18-200BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426AV18-200BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1426AV18-200BZXC part is unused and in its original packaging.

Return procedure for CY7C1426AV18-200BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1426AV18-200BZXC Tags

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