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Infineon Technologies CY7C1426AV18-250BZXC

Part No.:
CY7C1426AV18-250BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1426AV18-250BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,324

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Product details

Overview

CY7C1426AV18-250BZXC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, 250 MHz maximum operating frequency, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, 4-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking packet buffers and switch fabric memory.

For engineers reviewing the CY7C1426AV18-250BZXC datasheet, CY7C1426AV18-250BZXC pinout, CY7C1426AV18-250BZXC application, or CY7C1426AV18-250BZXC equivalent, key selection criteria include synchronous self-timed write timing, HSTL-compatible 165-ball FBGA package, dual-clock domain support (K/K and C/C), DLL-enabled data alignment, and depth expansion via port selects (WPS/RPS) and byte write enables (BWS0).

Technical Context

This device uses QDR-II architecture with fully independent read and write ports sharing a single multiplexed address bus. Address latching occurs on alternate rising edges of K clock, enabling concurrent access without bus turnaround. Each port operates synchronously with dedicated input registers (K/K-controlled) and output registers (C/C-controlled).

The internal Delay Lock Loop (DLL) aligns echo clocks (CQ/CQ) to output data edges, minimizing skew across high-speed PCB traces. Write operations are internally self-timed and synchronized to K clock, while read bursts deliver four sequential 9-bit words per access, achieving 600 MT/s effective data rate at 250 MHz clock.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (4M × 9 configuration)
Max Clock Frequency250 MHz - determines maximum sustained bandwidth of 4.5 Gb/s (9 bits × 4 words × 250 MHz)
Data Rate600 MT/s - double-data-rate transfer on both read and write ports
Core Supply Voltage1.8 V ±0.1 V - defines minimum logic threshold and power integrity requirements
I/O Supply RangeVDDQ = 1.4 V to 1.8 V - supports HSTL_18 I/O standard with adjustable drive strength
Package165-ball FBGA (15 × 17 × 1.4 mm) - enables high-pin-count routing with controlled impedance trace design
Burst Length4-word - reduces address bus toggling frequency by 75% vs. single-word access

Pinout & Package

165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix). Package supports thermal dissipation up to 1.0 W under typical burst operation and meets JEDEC MO-276AB mechanical standards.

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data inputsSampled on rising edge of K clock; 9-bit parallel data path for write port
Q[8:0]Synchronous read data outputsDriven on rising edges of C/C clocks; tri-stated when RPS is deasserted
WPSWrite port select (active LOW)Enables write transaction; ignored if deasserted, preventing unintended writes
RPSRead port select (active LOW)Initiates read burst; output drivers auto-tri-state after completion if deasserted
BWS0Byte write select 0 (active LOW)Controls write enable for full 9-bit word; no nibble-level granularity in x9 config
K / KPositive/negative input clocksEdge-aligned clocks for address/data capture; K only used for timing in single-clock mode
C / CPositive/negative output clocksDeskew-capable clocks for read data; used with CQ/CQ for source-synchronous capture
CQ / CQEcho clocks referenced to C/CFree-running, DLL-aligned clocks matching Q[8:0] output timing; simplify FPGA/ASIC capture logic
ZQOutput impedance calibration inputConnects to external 240 Ω resistor to ground to tune Q[8:0] and CQ/CQ driver impedance to 48 Ω
DOFFDLL disable control (active LOW)Pulling low disables DLL; shifts output timing to fixed delay mode - requires revalidation
TCK/TMS/TDI/TDOJTAG 1149.1 test interfaceSupports boundary scan testing and device identification; requires IEEE 1149.1 compliant controller

Key Features

FeatureDesign Value
Separate read/write portsEliminates data bus turnaround overhead and contention risk in full-duplex systems like switch ASICs
4-word burst + DDR interfaceDelivers 9-bit × 4 = 36 bits per 2-clock cycle, reducing address bus frequency by 75% vs. linear addressing
DLL-aligned echo clocks (CQ/CQ)Enables deterministic setup/hold timing at 600 MT/s without complex PCB length matching
HSTL_18-compatible I/O with ZQ calibrationEnsures signal integrity on high-speed buses; supports impedance tuning to match 50 Ω trace environments
Synchronous self-timed writesRemoves external write pulse timing constraints; internal timing guarantees data retention before next cycle

Applications

Packet Buffer MemorySwitch Fabric Interface

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer with concurrent read/write capability for cut-through switching.

Use Value: 4.5 Gb/s sustained bandwidth and 250 MHz clock enable real-time frame buffering without pipeline stalls.

Use Scenario: Interfacing between traffic manager and scheduler in multi-gigabit network processors.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store to absorb timing mismatches between upstream/downstream blocks.

Use Value: Independent RPS/WPS controls and BWS0 allow precise word-level updates without disturbing adjacent data in scheduler tables.

Telecom Line Card BufferHigh-Speed Test Equipment Memory

Use Scenario: Holding time-division multiplexed (TDM) voice/data streams in carrier-grade DSLAMs or OLTs.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing jitter-free data staging between serializers and backplane interfaces.

Use Value: CQ/CQ echo clocks synchronize FPGA capture logic to SRAM output edges, eliminating dynamic timing closure issues.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory supporting parallel stimulus/response validation at >500 MHz effective rate.

Use Value: 250 MHz K clock and DLL-aligned CQ ensure sub-nanosecond timing correlation between stimulus generation and response sampling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-250BIN250 MHz, 36-Mbit QDR-II+, x9, 1.5 V core, 1.5 V I/O; enhanced DLL and lower IDDRequires 1.5 V supply rails; not drop-in compatible due to voltage and timing differencesSelect if system already uses 1.5 V infrastructure and needs lower power at same speed
IS61WV102418B-250BLI250 MHz, 18-Mbit SSRAM, x18, single-port, 3.3 V I/O; no DDR or echo clocksLacks concurrent read/write; requires external arbitration and bus turnaround logicChoose only for cost-sensitive, non-concurrent applications where bandwidth < 2.25 Gb/s suffices

Compared with AS7C362000B-250BIN and IS61WV102418B-250BLI, CY7C1426AV18-250BZXC uniquely delivers true concurrent dual-port operation at 4.5 Gb/s with source-synchronous echo clocks - essential for deterministic latency in packet processing pipelines.

Availability

CY7C1426AV18-250BZXC is available at Aetrix Electronics and suitable for packet buffer memory, switch fabric interface, telecom line card buffer, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1426AV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

The QDR-II SRAM product line targets high-bandwidth, low-latency memory subsystems in switch fabric, packet processing, and baseband infrastructure - optimized for deterministic timing and concurrent access.

FAQ

What is the function of the ZQ pin on CY7C1426AV18-250BZXC?

The ZQ pin calibrates the output driver impedance of Q[8:0] and echo clocks CQ/CQ to match the system data bus. It must be connected to a 240 Ω resistor to ground to set output impedance to 48 Ω (0.2 × RQ); connecting directly to VDDQ enables minimum impedance mode. Leaving ZQ unconnected or tied to GND violates specification and causes undefined drive strength.

Can CY7C1426AV18-250BZXC operate in single-clock mode?

Yes - it supports single-clock mode using only K and C inputs (K and C are unused). In this mode, K serves as both address/data capture clock and output timing reference, while C clocks read data. CQ is generated relative to K instead of C. All timing parameters shift accordingly, and DLL remains active unless disabled via DOFF.

What does "BZXC" in the part number signify?

The "BZXC" suffix denotes a 165-ball FBGA package (15 × 17 mm), lead-free (Pb-free) finish, commercial temperature range (0 °C to +70 °C), and tape-and-reel packaging. The "B" indicates FBGA, "ZX" specifies Pb-free compliance per JEDEC J-STD-609, and "C" designates commercial grade - distinct from industrial (I) or extended (E) variants.

How many address bits are required for CY7C1426AV18-250BZXC?

CY7C1426AV18-250BZXC requires 20 address bits (A[19:0]) to access its full 4M × 9 memory space. Internally organized as four 1M × 9 arrays, the device multiplexes address inputs for both read and write ports, reducing pin count versus discrete address buses. Address latching occurs on rising edges of K clock during active RPS/WPS cycles.

CY7C1426AV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1426AV18-250BZXC FAQ

1.How can I place an order for CY7C1426AV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1426AV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1426AV18-250BZXC reliable?

The price and inventory of CY7C1426AV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426AV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1426AV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426AV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1426AV18-250BZXC?

CY7C1426AV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1426AV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1426AV18-250BZXC?

For technical support, including CY7C1426AV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426AV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1426AV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1426AV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426AV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1426AV18-250BZXC?

All CY7C1426AV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426AV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1426AV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1426AV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1426AV18-250BZXC Tags

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