Infineon Technologies CY7C1426AV18-300BZXC
- Part No.:
- CY7C1426AV18-300BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1426AV18-300BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1426AV18-300BZXC from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 4M × 9 organization, 300 MHz clock frequency, DDR interfaces on independent read/write ports, and 165-ball FBGA (15 × 17 × 1.4 mm) packaging. It delivers 600 MT/s data transfer rate per port and supports concurrent read/write operations in high-bandwidth networking buffers and packet processing ASIC/FPGA interfaces.
For engineers reviewing the CY7C1426AV18-300BZXC datasheet, CY7C1426AV18-300BZXC pinout, CY7C1426AV18-300BZXC application, or CY7C1426AV18-300BZXC equivalent, key selection criteria include burst depth (4-word), I/O voltage (VDDQ = 1.4–1.8 V), HSTL-compatible output drive, DLL-enabled timing accuracy, and JTAG 1149.1 test access support.
Technical Context
The device implements true dual-port synchronous pipelined architecture with physically separate read and write data paths-no bus turnaround required. Address latching occurs on alternating rising edges of K/K clocks, enabling full concurrency between ports while sharing one multiplexed address bus.
Each port uses DDR signaling: data transfers occur on both rising edges of C/C for reads and K/K for writes, achieving effective 600 MHz data rates at 300 MHz clock input. Echo clocks CQ/CQ are phase-aligned to C/C to simplify high-speed capture at the controller, and the internal Delay Lock Loop (DLL) ensures precise data-to-clock alignment under process/voltage/temperature variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (4M × 9 configuration) |
| Maximum Clock Frequency | 300 MHz - enables 600 MT/s DDR throughput per port |
| Data Bus Width | 9-bit bidirectional write (D[8:0]), 9-bit read (Q[8:0]) - supports byte-aligned packet payload storage |
| Core Supply Voltage | VDD = 1.8 V ±0.1 V - defines low-power 1.8V logic domain operation |
| I/O Supply Voltage | VDDQ = 1.4 V to 1.8 V - sets HSTL Class I output drive level and input threshold |
| Burst Length | 4-word burst - reduces address bus toggling frequency by 4× versus single-word access |
| Timing Architecture | Internal DLL + echo clocks (CQ/CQ) - eliminates board-level skew compensation requirements |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXC suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | Latched on rising edge of K/K; supports full 9-bit parallel write bursts |
| Q[8:0] | Synchronous read data outputs | Driven on rising edges of C/C; tri-stated when RPS is deasserted |
| K, K | Positive/negative input clocks | Control all synchronous inputs; used for write address/data capture and single-clock mode output |
| C, C | Positive/negative output clocks | Source-synchronous read data strobes; enable deskewing across multiple devices |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, DLL-aligned copies of C/C - simplify controller data capture timing |
| RPS, WPS | Read/Write Port Select (active LOW) | Enable independent port activation; allow depth expansion via port-select stacking |
| BWS0 | Byte Write Select 0 | Controls D[8:0] write enable; allows partial 9-bit word updates without read-modify-write |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q[8:0]/CQ/CQ driver impedance to 0.2 × RQ |
| DOFF | DLL disable control | Pulling LOW disables DLL - used only in systems requiring deterministic fixed-latency mode |
| TCK/TMS/TDI/TDO | JTAG 1149.1 boundary scan interface | Supports IEEE-compliant testing, programming, and debug visibility of I/O pins |
Key Features
| Feature | Design Value |
|---|---|
| Independent Read/Write Ports | Eliminates data bus turnaround delay and contention - enables true simultaneous access in packet buffering |
| 4-Word Burst Architecture | Reduces address bus switching frequency by 75% versus single-word access - lowers EMI and routing complexity |
| HSTL Class I Output Drivers | Variable drive strength configurable via ZQ calibration - ensures signal integrity on 50 Ω PCB traces |
| Delay Lock Loop (DLL) | Maintains <±50 ps data-to-clock alignment across PVT - removes need for manual timing margining |
| JTAG 1149.1 Test Access | Enables production-level boundary scan testing without custom test fixtures - reduces manufacturing test cost |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Interface |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-in-first-out (FIFO) buffer with concurrent write (ingress) and read (egress) access. Use Value: 300 MHz clock + 4-word burst delivers 2.16 Gbps sustained bandwidth per port - meets 10G Ethernet line-rate buffering needs. | Use Scenario: Interfacing between traffic manager ASIC and switch fabric controller in modular chassis systems. IC Role / Device Role / Timing Role: High-throughput memory bridge synchronizing asynchronous data streams between clock domains. Use Value: Independent RPS/WPS signals and echo clocks (CQ/CQ) enable deterministic latency and eliminate inter-port timing dependency. |
| FPGA-Based Protocol Acceleration | Telecom Line Card Control Memory |
Use Scenario: Offloading TCP/IP checksum, encryption, or header parsing tasks in FPGA-accelerated NICs. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for FPGA soft-core processors executing real-time protocol stacks. Use Value: DLL-aligned CQ/CQ outputs reduce FPGA input setup/hold timing closure effort by >30% versus non-echo clocked SRAMs. | Use Scenario: Storing configuration tables, statistics counters, and alarm logs in carrier-grade SDH/SONET line cards. IC Role / Device Role / Timing Role: Nonvolatile-configurable working memory for microcontroller-based management subsystems. Use Value: JTAG 1149.1 support enables in-system firmware update verification and field diagnostics without physical probe access. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10PF | 36-Mbit QDR-II+ (enhanced DLL, 10 ns tAA), 165-BGA, 1.8 V core | Higher speed grade (10 ns access vs. 11 ns for CY7C1426AV18-300BZXC); tighter hold time spec | Select for designs requiring sub-10 ns random access or extended temperature range (−40°C to +85°C industrial) |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, single-port, 150 MHz max, SOJ package, 3.3 V only | No DDR, no echo clocks, no DLL - simpler interface but half bandwidth and higher power per bit | Select only for cost-sensitive, lower-bandwidth control-plane memory where QDR-II features are unnecessary |
Compared with IDT72T3615L10PF and IS61WV102418B, CY7C1426AV18-300BZXC offers optimal balance of 300 MHz operation, proven QDR-II interoperability with Xilinx/Altera FPGAs, and mature production availability - making it preferred for volume networking equipment.
Availability
CY7C1426AV18-300BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric interfaces, FPGA-based protocol acceleration, and telecom line card control memory requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1426AV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
The QDR-II SRAM product line targets high-throughput, low-latency memory interfacing in networking ASICs, FPGAs, and packet-processing systems where concurrent read/write bandwidth is critical.
FAQ
What is the minimum VDDQ voltage supported for reliable operation?
The CY7C1426AV18-300BZXC specifies VDDQ = 1.4 V to 1.8 V. Operation below 1.4 V is not characterized or guaranteed - HSTL Class I output drive strength and input threshold margins degrade outside this range, risking setup/hold violations at 300 MHz. Always maintain VDDQ ≥ 1.4 V with ≤ ±3% ripple.
Can C and C be driven from the same differential clock source as K and K?
Yes - C and C may share the same differential clock generator as K and K, provided board layout maintains matched trace lengths and controlled impedance. The device internally separates clock domains; however, using independent sources improves jitter tolerance and simplifies timing closure in multi-device systems.
Is ZQ calibration required before normal operation?
Yes - ZQ calibration must be performed once at power-up by connecting ZQ to an external 120 Ω resistor to ground. This configures output drivers to match 50 Ω transmission lines. Skipping calibration results in excessive signal overshoot/undershoot and fails HSTL compliance, especially above 200 MHz.
Does the device support single-ended clocking on K/K or C/C inputs?
No - K/K and C/C inputs require true differential signaling per HSTL specification. Driving only K or only C violates AC timing parameters and causes metastability in internal registers. Single-ended use is unsupported and invalidates all published timing specs including tSKO and tDSH.
CY7C1426AV18-300BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1426AV18-300BZXC FAQ
1.How can I place an order for CY7C1426AV18-300BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1426AV18-300BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1426AV18-300BZXC reliable?
The price and inventory of CY7C1426AV18-300BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426AV18-300BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1426AV18-300BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426AV18-300BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1426AV18-300BZXC?
CY7C1426AV18-300BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1426AV18-300BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1426AV18-300BZXC?
For technical support, including CY7C1426AV18-300BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426AV18-300BZXC requirements.
6.How does Aetrix verify that CY7C1426AV18-300BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1426AV18-300BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426AV18-300BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1426AV18-300BZXC?
All CY7C1426AV18-300BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426AV18-300BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1426AV18-300BZXC part is unused and in its original packaging.
Return procedure for CY7C1426AV18-300BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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