Infineon Technologies CY7C1426JV18-300BZC
- Part No.:
- CY7C1426JV18-300BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1426JV18-300BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1426JV18-300BZC from Cypress Semiconductor is a 4M × 9 (36-Mbit) QDR-II SRAM with separate read/write ports, 300 MHz clock operation, DDR interfaces on both ports (600 MT/s effective data rate), and 1.8 V core / 1.4 V I/O supply. It delivers concurrent read-write capability for high-throughput packet buffering in network line cards and telecom switching fabric.
For engineers reviewing the CY7C1426JV18-300BZC datasheet, CY7C1426JV18-300BZC pinout, CY7C1426JV18-300BZC application, or CY7C1426JV18-300BZC equivalent, key selection criteria include QDR-II burst timing, DLL-enabled 1.5-cycle read latency, HSTL-18 I/O compatibility, and 165-ball FBGA (15 × 17 mm) mechanical fit in space-constrained routing layouts.
Technical Context
The device implements true dual-port synchronous pipelined architecture: independent K/K clocks latch write addresses and data, while C/C clocks control read data output timing. Echo clocks CQ/CQ are phase-aligned to C/C to enable source-synchronous capture at the controller.
It supports two operational modes: DLL-enabled mode (1.5-cycle read latency, 300 MHz max) and DLL-disabled mode (1-cycle latency, ≤167 MHz, QDR-I timing). Write operations are internally self-timed, and depth expansion uses dedicated port selects (RPS/WPS) and byte write enables (BWS0).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (4M × 9 organization) |
| Max Clock Frequency | 300 MHz - enables 600 MT/s DDR transfers per port |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DLL disabled |
| I/O Voltage | VDDQ = 1.4 V - compatible with HSTL-18 Class I receivers |
| Core Voltage | VDD = 1.8 V ±0.1 V - defines internal logic timing and power consumption |
| Burst Length | 4-word burst - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - supports fine-pitch PCB routing and thermal dissipation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data input | 9-bit parallel data sampled on rising edge of K/K; supports full 9-bit word writes |
| Q[8:0] | Synchronous read data output | 9-bit parallel data driven on rising edges of C/C; tri-stated when RPS deasserted |
| RPS | Read port select | Active-low signal enabling read burst; sampled on rising edge of K |
| WPS | Write port select | Active-low signal initiating write burst; sampled on rising edge of K |
| BWS0 | Byte write select | Active-low control for all 9 bits (D[8:0]); no partial-byte masking support |
| C, C | Output data clocks | Differential pair controlling Q[8:0] timing; used with CQ/CQ for deskewed capture |
| K, K | Input clocks | Differential pair latching D[8:0], A[19:0], RPS, WPS, BWS0 on rising edges |
| CQ, CQ | Echo clocks | Free-running outputs synchronized to C/C; provide deterministic data strobe at receiver |
| ZQ | Impedance calibration | Connects to external 240 Ω resistor to ground to tune Q[8:0]/CQ/CQ output drive strength |
| DOFF | DLL disable | Pulled low disables Delay Lock Loop, reverting to QDR-I timing and 167 MHz max frequency |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay and contention - enables true concurrent access without arbitration logic |
| DDR interfaces on both ports | Doubles effective bandwidth per clock cycle - achieves 600 MT/s on 300 MHz clock without doubling pin count |
| Programmable DLL | Enables 1.5-cycle read latency at 300 MHz; DOFF pin allows fallback to 1-cycle QDR-I mode for timing margin |
| HSTL-18 compatible I/O | Meets JEDEC JESD8-15A for 1.4 V VDDQ - ensures signal integrity with standard FPGA/ASIC memory controllers |
| JTAG 1149.1 test port | Supports boundary scan testing and in-system diagnostics without additional test fixtures |
Applications
| Network Packet Buffering | Telecom Switch Fabric |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G line interface cards. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between SerDes PHY and traffic manager ASIC. Use Value: Concurrent read/write eliminates pipeline stalls during back-to-back packet processing, sustaining 600 MT/s throughput per port. | Use Scenario: Interconnecting multiple switch ASICs in modular chassis-based routers. IC Role / Device Role / Timing Role: Shared memory resource for crossbar arbitration tables and cell forwarding descriptors. Use Value: 4-word burst reduces address bus loading by 75%, easing timing closure on high-speed backplane traces. |
| Baseband Processing Memory | High-Speed Test Equipment |
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE eNodeB baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to multi-core DSP clusters. Use Value: DLL-enabled 1.5-cycle read latency meets tight 300 MHz timing budget for real-time signal processing loops. | Use Scenario: Capturing high-resolution waveform samples in automated test systems with >1 GSPS sampling rates. IC Role / Device Role / Timing Role: Deep FIFO buffer between ADC front-end and PCIe host interface. Use Value: Echo clocks CQ/CQ provide deterministic source-synchronous strobes, eliminating setup/hold uncertainty at 600 MT/s. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-300BIN | Same 4M × 9 density, 300 MHz, but uses SSTL-18 I/O (not HSTL-18); no echo clocks | Lacks CQ/CQ - requires tighter board-level skew control; incompatible with Cypress reference designs | Select only if existing system uses SSTL-18 and can tolerate higher timing margin risk |
| IS45S32800J-300BLI | 32Mbit QDR-II+ (4M × 8), 333 MHz, integrated DLL bypass, but no BWS0 support for 9-bit writes | Requires external bit-width adaptation for 9-bit data path; not drop-in for CY7C1426JV18's native 9-bit interface | Consider only for new designs targeting higher frequency and willing to redesign data path logic |
Compared with AS7C362000B-300BIN and IS45S32800J-300BLI, CY7C1426JV18-300BZC provides native 9-bit I/O alignment, HSTL-18 compatibility, and echo clocks - critical for legacy telecom and networking platforms requiring proven timing closure at 300 MHz.
Availability
CY7C1426JV18-300BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, baseband processing memory, and high-speed test equipment requiring stable component supply across extended production lifecycles.
Supply support for CY7C1426JV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed packet infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1426JV18-300BZC?
The DOFF pin disables the internal Delay Lock Loop when pulled low. In this state, the device operates in QDR-I mode with 1-cycle read latency and a maximum frequency of 167 MHz. For full 300 MHz operation and 1.5-cycle latency, DOFF must be tied high via a ≤10 kΩ pull-up resistor to VDDQ.
Can CY7C1426JV18-300BZC interface directly with Xilinx Virtex-5 FPGAs?
Yes - its HSTL-18-compatible I/O (VDDQ = 1.4 V) matches Virtex-5 HP bank voltage requirements. The device's C/C and CQ/CQ timing aligns with Xilinx's source-synchronous capture methodology, and JTAG pins comply with IEEE 1149.1 for boundary scan integration.
How does the 4-word burst architecture reduce system-level complexity?
By transferring four consecutive 9-bit words per address cycle, the burst cuts required address transitions by 75%. This lowers address bus toggle rate, reduces PCB trace count, eases timing closure on long interconnects, and eliminates need for external burst counters or address sequencers in the memory controller.
Is the ZQ pin mandatory for reliable operation?
Yes - ZQ must be connected to a 240 Ω resistor to ground to calibrate output driver impedance for Q[8:0], CQ, and CQ signals. Leaving ZQ unconnected or tying it to GND violates JEDEC HSTL specifications and causes signal integrity failures at 600 MT/s due to mismatched termination.
CY7C1426JV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 4M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1426JV18-300BZC FAQ
1.How can I place an order for CY7C1426JV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1426JV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1426JV18-300BZC reliable?
The price and inventory of CY7C1426JV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426JV18-300BZC is usually 5 days.
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CY7C1426JV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1426JV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1426JV18-300BZC?
For technical support, including CY7C1426JV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426JV18-300BZC requirements.
6.How does Aetrix verify that CY7C1426JV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1426JV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426JV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1426JV18-300BZC?
All CY7C1426JV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426JV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1426JV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1426JV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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