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Infineon Technologies CY7C1426KV18-250BZC

Part No.:
CY7C1426KV18-250BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1426KV18-250BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,876

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Product details

Overview

CY7C1426KV18-250BZC from Cypress Semiconductor is a 4 M × 9 (36-Mbit) QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), echo clocks (CQ/CQ), and PLL-based timing control for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1426KV18-250BZC datasheet, CY7C1426KV18-250BZC pinout, CY7C1426KV18-250BZC application, or CY7C1426KV18-250BZC equivalent, key selection criteria include 9-bit data width, 20-bit address bus support, DOFF-controlled read latency (1 or 1.5 cycles), HSTL-compatible output drive, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1426KV18-250BZC implements a synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.

It uses dual input clocks (K/K for addressing/control, C/C for output timing) plus echo clocks (CQ/CQ) to align data capture at the receiver. The internal PLL ensures precise data placement relative to echo clocks, supporting reliable 500 Mbps DDR transfers under 250 MHz clock conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (4 M × 9 organization)
Max Clock Frequency250 MHz - sets maximum sustained bandwidth of 4.5 Gbps (9 bits × 2 edges × 250 MHz)
Core Supply Voltage1.8 V ±0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply Range1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-18/15 systems
Read Latency1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read-to-read timing in pipeline mode
Burst LengthFour-word - reduces effective address bus toggling rate by 4× versus single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - specifies mechanical footprint, thermal profile, and signal integrity constraints

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZC suffix).

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Write data inputs9-bit synchronous data sampled on rising edge of K clock; drives memory array during active WPS assertion
Q[8:0]Read data outputs9-bit DDR outputs driven on rising edges of C/C clocks; aligned with CQ/CQ echo clocks for receiver capture
K, KInput clocksDual-phase system clock inputs controlling all synchronous inputs; only rising edges used for latching
C, COutput clocksSeparate output timing clocks minimizing skew between Q[8:0] and CQ/CQ; enable source-synchronous capture
CQ, CQEcho clocksDelayed copies of C/C clocks routed alongside Q[8:0]; simplify high-speed data capture at FPGA/ASIC receiver
A[19:0]Address inputs20-bit multiplexed address bus latched on K rising edge for both read and write port access
WPSWrite port selectActive-low synchronous enable; deassertion disables write data sampling and prevents unintended writes
BWS0Byte write selectActive-low control for entire 9-bit word; when LOW, D[8:0] is written; when HIGH, current contents retained
DOFFRead latency controlStatic configuration pin: LOW → 1-cycle latency; HIGH → 1.5-cycle latency; sets internal pipeline depth
VDD, VDDQ, VSSPower/groundVDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; dedicated VSS balls per bank reduce switching noise coupling
ZQImpedance calibrationConnects to external 240 Ω resistor to ground; calibrates HSTL output driver impedance for signal integrity
TCK/TMS/TDI/TDOJTAG interfaceIEEE 1149.1 compliant test access port for boundary scan, device ID, and production testing

Key Features

FeatureDesign Value
Separate read/write portsEnables true concurrent read and write operations without bus contention or turnaround delay
Four-word burst architectureReduces required address transition rate by 75%, lowering EMI and simplifying controller address generation
HSTL Class I compatible outputsProvides programmable drive strength and on-die termination matching for clean 500 Mbps DDR signaling
Integrated PLL with echo clocksEliminates need for external clock forwarding ICs; enables deterministic data capture at receiver with <10 ps jitter margin
Synchronous self-timed writesGuarantees write completion within fixed clock cycles regardless of process/voltage/temperature variation

Applications

Network Packet BufferHigh-Speed Test Equipment

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress packet buffer with zero-turnaround read-write concurrency.

Use Value: 4.5 Gbps bandwidth and 1-cycle read latency enable full-duplex 10 GbE frame buffering without pipeline stalls.

Use Scenario: Capturing high-fidelity digital waveforms from multi-channel ATE systems at >500 MS/s.

IC Role / Device Role / Timing Role: High-throughput acquisition memory interfacing directly to FPGA-based pattern generators and comparators.

Use Value: Echo clocks (CQ/CQ) and DDR outputs ensure sub-nanosecond timing alignment across 9-bit parallel capture paths.

Telecom Line CardReal-Time Video Processing

Use Scenario: Buffering time-division multiplexed (TDM) voice channels in carrier-grade DSLAMs and optical line terminals.

IC Role / Device Role / Timing Role: Synchronous FIFO replacement with deterministic latency for TDM channel aggregation/distribution.

Use Value: DOFF-selectable 1/1.5-cycle latency allows precise synchronization with SONET/SDH frame boundaries.

Use Scenario: Frame buffering between video encoder and transport stream multiplexer in broadcast encoders.

IC Role / Device Role / Timing Role: Dual-port memory staging uncompressed YUV422 video lines for real-time compression pipelines.

Use Value: 9-bit × 4-word burst matches standard video pixel packing, reducing external bus width and controller complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-250BIN250 MHz QDR II+ SRAM, 4 M × 9, same 165-ball FBGA but supports 1.35 V VDDQ min and enhanced PLL jitter specsDesigned for next-gen telecom infrastructure requiring tighter timing margins and lower voltage operationSelect if system requires extended voltage range or improved jitter performance beyond CY7C1426KV18 spec
IS42S32800J-25BLI250 MHz DDR2 SDRAM, 4 M × 32, asynchronous command interface, no echo clocks or separate portsLower cost alternative where concurrent R/W not required and controller can manage refresh and command schedulingSelect only if application tolerates higher latency, refresh overhead, and lacks strict zero-turnaround requirements

Compared with AS7C362000B-250BIN, CY7C1426KV18-250BZC offers identical timing and pinout but lacks QDR II+ enhancements like reduced setup/hold windows; compared with IS42S32800J-25BLI, it delivers deterministic latency and true concurrency at the cost of higher power and design complexity.

Availability

CY7C1426KV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, high-speed test instrumentation, telecom line card design, and real-time video processing requiring stable component supply across long product lifecycles.

Supply support for CY7C1426KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The QDR® II SRAM product line targets high-bandwidth, low-latency buffer applications in networking equipment and test systems where deterministic timing and concurrent access are critical.

FAQ

What is the function of the DOFF pin on CY7C1426KV18-250BZC?

The DOFF (Data Output OFFset) pin configures read latency: when held LOW, the device operates with 1-cycle read latency; when HIGH, it uses 1.5-cycle latency. This setting is sampled at power-up and remains static during operation. It affects internal pipeline depth and must match system timing budget-no dynamic switching is supported.

Can CY7C1426KV18-250BZC operate with only one clock (K) instead of dual K/K inputs?

Yes-the device supports single-clock mode where K and K are tied together. In this configuration, C and C must also be tied, and echo clocks CQ/CQ remain functional. All synchronous inputs are latched on the rising edge of the single K clock, simplifying clock distribution at the cost of reduced timing margin versus true differential K/K operation.

How does the ZQ pin affect signal integrity in high-speed layouts?

The ZQ pin connects to an external 240 Ω resistor to ground and calibrates the output driver impedance of all Q[8:0] pins to match transmission line characteristics. Proper ZQ calibration ensures consistent HSTL Class I output swing and edge rates, minimizing reflections and crosstalk on 500 Mbps DDR traces-critical for maintaining eye opening in dense PCB routing.

Is JTAG boundary scan supported on CY7C1426KV18-250BZC, and what functions does it enable?

Yes-CY7C1426KV18-250BZC implements IEEE 1149.1 JTAG with TCK, TMS, TDI, and TDO pins. It supports device identification, boundary scan testing of interconnects, and basic register access. JTAG is enabled by default at power-up and does not require external configuration; it is fully functional in all operating modes including during active memory access.

CY7C1426KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1426KV18-250BZC FAQ

1.How can I place an order for CY7C1426KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1426KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1426KV18-250BZC reliable?

The price and inventory of CY7C1426KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1426KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1426KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1426KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1426KV18-250BZC?

CY7C1426KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1426KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1426KV18-250BZC?

For technical support, including CY7C1426KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1426KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1426KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1426KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1426KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1426KV18-250BZC?

All CY7C1426KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1426KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1426KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1426KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1426KV18-250BZC Tags

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