Infineon Technologies CY7C1426KV18-250BZCT

Overview

CY7C1426KV18-250BZCT from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 4 M × 9 organization, 250 MHz maximum operating frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces, four-word burst architecture, and echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1426KV18-250BZCT datasheet, CY7C1426KV18-250BZCT pinout, CY7C1426KV18-250BZCT application, or CY7C1426KV18-250BZCT equivalent, key selection criteria include concurrent read/write bandwidth, DOFF-configurable read latency (1-cycle or 1.5-cycle), HSTL-compatible output drive, JTAG 1149.1 test support, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

This QDR II SRAM uses dual independent clock domains: K/K for address/data input timing and C/C for output timing, enabling precise DDR edge alignment without bus turnaround. Its internal self-timed write circuitry eliminates external write pulse control, while the PLL ensures accurate data placement relative to echo clocks.

The device supports depth expansion via RPS/WPS port selects and byte-level write masking via BWS0 (active-low), allowing selective 9-bit word updates without disturbing adjacent memory locations. DOFF pin configures read latency between 1 cycle (LOW) and 1.5 cycles (HIGH), directly affecting system timing closure in pipeline-constrained designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with CY7C1426KV18-300BZCT, the -250BZCT offers lower power and relaxed timing margins; compared with AS7C336818A-250BIN, it delivers superior concurrency, deterministic latency control, and simplified high-speed capture via CQ/CQ - making it preferable for new designs targeting >200 MHz sustained throughput.

Availability

CY7C1426KV18-250BZCT is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom baseband processing, and FPGA-based protocol acceleration requiring stable component supply across long production lifecycles.

Supply support for CY7C1426KV18-250BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1426KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed networking and signal processing infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1426KV18-250BZCT?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in systems with longer clock-to-data flight times; when LOW, it selects 1-cycle latency for minimal pipeline delay. This setting directly affects the number of clock cycles between address assertion and valid Q[8:0] output, and must be fixed at power-up based on system-level timing analysis.

Can CY7C1426KV18-250BZCT operate with only a single clock domain?

Yes - the device supports single-clock mode where K/K and C/C are tied together, simplifying clock tree design. In this configuration, all synchronous inputs and outputs are referenced to the same clock pair, and echo clocks (CQ/CQ) still function as delayed copies for capture timing. However, dual-clock mode provides superior skew management and is recommended for >200 MHz operation.

How does byte write select (BWS0) work for the 9-bit data width?

BWS0 is an active-low signal that gates the entire 9-bit D[8:0] bus during write operations. When BWS0 is HIGH, no data is written regardless of WPS state; when LOW, all 9 bits are written to the addressed location. Unlike nibble-select variants, CY7C1426KV18 uses BWS0 for full-word masking - it does not support partial-byte writes within the 9-bit word.

Is the 165-ball FBGA package of CY7C1426KV18-250BZCT compatible with standard reflow profiles?

Yes - the Pb-free 165-ball FBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. Thermal resistance (θ_JA) is 25.5 °C/W, requiring standard 4-layer PCB with thermal vias under the package and adequate copper pour for heatsinking in continuous 250 MHz operation.