Infineon Technologies CY7C1426KV18-300BZCT

Overview

CY7C1426KV18-300BZCT from Cypress Semiconductor is a 4 M × 9 (36-Mbit) QDR® II SRAM with four-word burst architecture, 300 MHz clock operation, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (600 Mbps effective data rate), echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers and packet memory applications.

For engineers reviewing the CY7C1426KV18-300BZCT datasheet, CY7C1426KV18-300BZCT pinout, CY7C1426KV18-300BZCT application, or CY7C1426KV18-300BZCT equivalent, key selection criteria include 300 MHz synchronous operation, 9-bit × 4-word burst width, 165-ball FBGA package compatibility, DOFF-controlled read latency (1 or 1.5 cycles), and HSTL-15/18 I/O drive compliance.

Technical Context

This QDR II SRAM implements independent read and write pipelines with dual DDR interfaces-data transferred on both rising edges of K/K (write) and C/C (read) clocks-enabling true concurrent access without bus turnaround. Its 4 M × 9 organization maps to 20 address bits, latched on alternating K-clock edges, and supports depth expansion via WPS/RPS port selects.

The device uses an internal PLL to align output data with echo clocks (CQ/CQ), minimizing skew in high-speed systems. Read latency is configurable via DOFF: 1 cycle when LOW (QDR I mode), 1.5 cycles when HIGH (QDR II mode), ensuring deterministic timing for switch fabric and buffer memory designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-150BLI, CY7C1426KV18-300BZCT delivers 2× higher bandwidth, integrated echo clock timing, and programmable read latency-making it optimal for 10G+ switch fabric and telecom buffer applications demanding precise DDR synchronization.

Availability

CY7C1426KV18-300BZCT is available at Aetrix Electronics and suitable for telecom line cards, high-speed switch fabric, network processor buffers, and test equipment memory subsystems requiring stable component supply, long-lifecycle support, and verified QDR II timing compliance.

Supply support for CY7C1426KV18-300BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for communications, industrial, and automotive markets.

CY7C1426KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for ultra-low-latency, high-bandwidth packet buffering in networking infrastructure where deterministic DDR timing and concurrent read/write throughput are critical.

FAQ

What is the function of the DOFF pin on CY7C1426KV18-300BZCT?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency (QDR II mode) for optimized bandwidth; when LOW, it selects 1-cycle latency (QDR I compatibility mode). This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the BWS0 pin operate in CY7C1426KV18-300BZCT?

In CY7C1426KV18-300BZCT, BWS0 is the sole byte write select and operates as an active-low signal controlling the entire 9-bit D[8:0] word. When deasserted (HIGH), write data is ignored; when asserted (LOW), the full 9-bit word is written. Unlike narrower variants, this device does not support partial-byte writes-BWS0 enables or disables the whole word.

Can CY7C1426KV18-300BZCT operate with a single clock domain?

Yes-CY7C1426KV18-300BZCT supports single-clock mode where K and C are tied together (and K and C likewise), simplifying board design. In this mode, all registers use the same clock edges, and echo clocks (CQ/CQ) remain functional for source-synchronous capture, though timing margins tighten compared to dual-clock operation.

What is the purpose of the ZQ pin on CY7C1426KV18-300BZCT?

The ZQ pin connects to a 240 Ω external resistor to ground, enabling on-die impedance calibration for HSTL I/O drivers. This process adjusts output driver strength and ODT (on-die termination) values to match PCB trace impedance, reducing signal reflections and improving signal integrity without discrete termination resistors.