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Infineon Technologies CY7C1440AV25-250BZXIT

Part No.:
CY7C1440AV25-250BZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1440AV25-250BZXIT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,808

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Product details

Overview

CY7C1440AV25-250BZXIT from Cypress Semiconductor is a 36-Mbit (1 M × 36) pipelined synchronous SRAM with 2.5 V core/I/O supply, 250 MHz clock support, 2.6 ns clock-to-output delay, and registered address/data paths for high-speed cache applications in Pentium-class processors.

For engineers reviewing the CY7C1440AV25-250BZXIT datasheet, CY7C1440AV25-250BZXIT pinout, CY7C1440AV25-250BZXIT application, or CY7C1440AV25-250BZXIT equivalent, this device delivers deterministic burst timing, JEDEC JESD8-5-compatible I/O, IEEE 1149.1 boundary scan, and user-selectable linear/interleaved burst modes for secondary cache subsystems.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter, with address latching controlled by either ADSP (processor strobe) or ADSC (controller strobe), and automatic address increment via ADV on each rising CLK edge during burst cycles. All synchronous inputs-including CE1/CE2/CE3, BWA–BWD, BWE, GW, MODE, and OE-are registered on the positive clock edge.

The device supports byte-write operations qualified by BWE and four byte-select inputs (BWA–BWD), plus global write via GW. Output enable (OE) is asynchronous and tri-states DQ/DQP pins; ZZ sleep mode is asynchronous and active-high with internal pull-down.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 organization), enabling single-chip 4 MB cache line storage with 36-bit data bus alignment.
Max Clock Frequency 250 MHz - supports 4 ns clock period for tight timing budgets in high-performance CPU cache interfaces.
Access Time (tCO) 2.6 ns - guaranteed clock-to-output delay ensures predictable read latency in pipelined burst sequences.
Supply Voltage 2.5 V core (VDD) and I/O (VDDQ) - compatible with legacy 2.5 V logic families and low-power system rails.
Burst Mode Control User-selectable via MODE pin - configures interleaved (Pentium/i486) or linear burst addressing for processor compatibility.
Write Architecture Synchronous self-timed writes with byte-write (BWA–BWD + BWE) and global-write (GW) options - eliminates external write timing control logic.
Boundary Scan IEEE 1149.1-compliant TAP controller - enables in-system testability without additional test fixtures.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, Pb-free (RoHS-compliant), ball pitch 0.8 mm.

Pin/Terminal Circuit Role Design Meaning
CLK Clock Input Positive-edge-triggered master clock synchronizing all registered inputs/outputs and burst counter advancement.
ADSP / ADSC Address Strobe Inputs Asynchronous-selectable but synchronous-sampled strobes - ADSP prioritized for processor-initiated accesses; ADSC for controller-initiated bursts.
ADV Burst Advance Control Active-low signal sampled on CLK rise to increment internal 2-bit counter and generate next burst address.
BWA–BWD, BWE, GW Byte Write Controls BWA–BWD select individual 9-bit bytes; BWE enables byte write; GW overrides all and writes full 36-bit word.
OE Output Enable Asynchronous, active-low - controls DQ/DQP direction; masked during first read clock after chip deselect.
ZZ Sleep Mode Input Asynchronous, active-high with internal pull-down - reduces standby current while preserving data integrity.
VDD / VSS / VDDQ / VSSQ Power & Ground Dual-rail supply: VDD/VSS for core logic; VDDQ/VSSQ for I/O buffers - minimizes noise coupling between domains.

Key Features

Feature Design Value
Pipelined Synchronous Interface Full register-to-register path with 250 MHz operation - eliminates external latch timing constraints and simplifies PCB layout.
Configurable Burst Addressing MODE-pin selectable interleaved (Pentium) or linear sequence - ensures drop-in compatibility across x86 and custom processor platforms.
Byte-Write Flexibility Four independent 9-bit byte lanes with BWA–BWD and BWE - enables precise partial-word updates without read-modify-write overhead.
Low-Latency Cache Timing 2.6 ns tCO and 3-1-1-1 access rate - meets sub-4 ns cycle time requirements for L2 cache tag/data arrays.
JTAG Boundary Scan IEEE 1149.1-compliant TAP with instruction register, bypass, and boundary-scan chain - supports automated board-level test and debug.

Applications

Processor Secondary Cache Network Packet Buffer

Use Scenario: High-speed L2 cache for Intel Pentium and compatible CPUs requiring deterministic burst access and low-latency reads.

IC Role / Device Role / Timing Role: Pipelined synchronous SRAM serving as 36-bit-wide cache data array with interleaved burst addressing aligned to CPU bus protocol.

Use Value: 2.6 ns tCO and 250 MHz clock enable single-cycle cache hits matching CPU front-side bus timing.

Use Scenario: Temporary packet buffering in Gigabit Ethernet switches where burst-aligned memory access improves throughput.

IC Role / Device Role / Timing Role: Synchronous SRAM providing burst-mode storage for variable-length frame headers and payloads with minimal latency jitter.

Use Value: Registered inputs/outputs and self-timed writes eliminate setup/hold violations under 250 MHz switching conditions.

Industrial Motion Controller Memory Avionics Data Acquisition Buffer

Use Scenario: Real-time position lookup table storage in servo drives requiring deterministic access and ECC-free reliability.

IC Role / Device Role / Timing Role: Non-volatile-cache-equivalent buffer holding motion profile coefficients accessed via linear burst sequences.

Use Value: 2.5 V supply and -40°C to +85°C industrial temp range ensure stable operation in electrically noisy motor control environments.

Use Scenario: High-integrity sensor data staging in flight control systems before CRC-checked transfer to flash or FPGA.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as time-critical acquisition buffer with JTAG testability for DO-254 compliance verification.

Use Value: IEEE 1149.1 boundary scan enables in-system structural testing without physical probe access-critical for sealed avionics enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102436BLL-250BLI 250 MHz, 36-Mbit, 2.5 V, but uses 209-ball FBGA (vs. 165-ball); no ZZ sleep mode; no JTAG. Lacks asynchronous sleep and boundary scan - unsuitable for power-constrained or test-critical designs. Select when footprint compatibility is secondary to cost and JTAG/test features are unnecessary.
MT48LC32M36A2-25E:H SDR SDRAM (not SRAM); 32 Mbit × 36, 2.5 V, 250 MHz, but requires refresh, command decoding, and has higher latency. Not pin- or functionally compatible; requires memory controller support for SDRAM protocol. Choose only if system already uses SDRAM controller and cache coherency logic can absorb refresh overhead.

Compared with IS61WV102436BLL-250BLI and MT48LC32M36A2-25E:H, CY7C1440AV25-250BZXIT uniquely combines zero-refresh operation, deterministic 2.6 ns tCO, asynchronous ZZ sleep, and IEEE 1149.1 testability in a compact 165-ball FBGA-making it optimal for latency-sensitive, testable, and power-aware embedded cache designs.

Availability

CY7C1440AV25-250BZXIT is available at Aetrix Electronics and suitable for processor secondary cache, network packet buffering, industrial motion control, and avionics data acquisition requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1440AV25-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1440AV25 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency cache and buffer applications in x86-compatible and real-time embedded systems.

FAQ

What is the difference between CY7C1440AV25 and CY7C1446AV25?

CY7C1440AV25 is a 1 M × 36 (36-Mbit) device in a 165-ball FBGA, while CY7C1446AV25 is a 512 K × 72 (36-Mbit) variant in a larger 209-ball FBGA. Both share identical timing, voltage, and feature sets, but differ in organization, pinout, and package size-making them non-interchangeable without PCB redesign.

Does CY7C1440AV25-250BZXIT support linear burst mode?

Yes. The MODE pin selects between interleaved (default for Pentium/i486) and linear burst addressing. When MODE is HIGH at power-up or clock edge, the device uses linear burst order; when LOW, it uses interleaved. This selection is latched synchronously and remains active until changed.

Can OE be asserted during a write cycle without affecting data integrity?

Yes. OE is asynchronous and does not interfere with write operations. During writes, OE controls output driver state but does not gate internal write circuitry. When OE is HIGH, DQ/DQP pins enter high-impedance mode regardless of ongoing write activity, preserving bus isolation.

Is the ZZ sleep mode compatible with automatic wake-up on address transition?

No. ZZ is a static, non-time-critical sleep mode requiring explicit deassertion (driving ZZ LOW or leaving it floating) to resume operation. There is no automatic wake-on-access feature-the device remains in sleep until ZZ is released and a valid clock/address strobe sequence restarts synchronous operation.

CY7C1440AV25-250BZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.6 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1440AV25-250BZXIT FAQ

1.How can I place an order for CY7C1440AV25-250BZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1440AV25-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1440AV25-250BZXIT reliable?

The price and inventory of CY7C1440AV25-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1440AV25-250BZXIT is usually 5 days.

3.What payment methods are accepted for CY7C1440AV25-250BZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1440AV25-250BZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1440AV25-250BZXIT?

CY7C1440AV25-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1440AV25-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1440AV25-250BZXIT?

For technical support, including CY7C1440AV25-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1440AV25-250BZXIT requirements.

6.How does Aetrix verify that CY7C1440AV25-250BZXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1440AV25-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1440AV25-250BZXIT meets industry standards.

7.What is the process for return or replacement of CY7C1440AV25-250BZXIT?

All CY7C1440AV25-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1440AV25-250BZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1440AV25-250BZXIT part is unused and in its original packaging.

Return procedure for CY7C1440AV25-250BZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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