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Infineon Technologies CY7C1440AV33-250BZXI

Part No.:
CY7C1440AV33-250BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1440AV33-250BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,642

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Product details

Overview

CY7C1440AV33-250BZXI from Cypress Semiconductor is a 36-Mbit (1M × 36) pipelined synchronous SRAM with registered inputs/outputs, 250 MHz bus operation support, 2.6 ns clock-to-output delay, 3.3 V core supply, and 2.5 V/3.3 V I/O compatibility - deployed in high-speed CPU cache subsystems requiring deterministic burst access timing.

For engineers reviewing the CY7C1440AV33-250BZXI datasheet, CY7C1440AV33-250BZXI pinout, CY7C1440AV33-250BZXI application, or CY7C1440AV33-250BZXI equivalent, key selection criteria include synchronous burst mode control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), JTAG boundary-scan compliance, ZZ sleep mode behavior, and dual-package availability (100-pin TQFP / 165-ball FBGA).

Technical Context

The device implements a two-bit synchronous wraparound burst counter, user-selectable via MODE pin for Intel Pentium™ interleaved or linear burst sequences. All address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK, enabling precise timing alignment in high-frequency bus interfaces.

It supports synchronous self-timed writes with configurable byte-width (1–4 bytes) using BWE and BWX signals, plus global write (GW) override. Output enable (OE) is asynchronous, allowing immediate tri-state control independent of clock phase, while ZZ enables non-time-critical sleep with data retention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 36 Mbit (1M × 36 organization) - supports full-word parallel data paths for cache line transfers.
Max clock frequency 250 MHz - enables 4 ns clock period for tightly timed pipeline stages in CPU/memory co-designs.
Access time (tCO) 2.6 ns - guaranteed clock-to-output delay for first valid data in read cycles, critical for cache hit latency.
Core supply voltage 3.3 V ± 0.3 V - matches legacy PCI/AGP-era power domains; requires separate VDDQ for I/O.
I/O supply range 2.5 V or 3.3 V - allows interoperability with both LVTTL and SSTL-2 signaling environments.
Burst modes Interleaved (Pentium-compatible) or linear - selected by MODE pin at power-up; determines address increment pattern.
Byte write control Four independent byte enables (BWA–BWD) + BWE gate - enables partial-word updates without read-modify-write overhead.

Pinout & Package

Available in Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. Pin functions validated per Cypress Document No. 38-05383 Rev. *N.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference for all registered inputs/outputs and burst counter increment.
ADSP / ADSC Address strobe inputs Asynchronous initiation triggers for address capture; ADSP takes priority when both asserted - used to distinguish processor vs. controller access sources.
ADV Burst advance control Active-LOW signal that increments internal two-bit burst counter on next CLK edge - enables automatic sequential addressing during burst reads/writes.
BWA–BWD, BWE, GW Write control inputs Enable selective byte writes (BWA–BWD + BWE) or full-word writes (GW LOW); all sampled synchronously on CLK rise.
OE Asynchronous output enable Active-LOW signal that overrides clock timing to immediately tri-state DQ/DQP outputs - essential for bus arbitration and shared-memory contention handling.
ZZ Asynchronous sleep input Active-HIGH signal placing device in low-power retention mode; internal pull-down ensures safe default LOW state for normal operation.

Key Features

Feature Design Value
Registered I/O architecture Eliminates setup/hold violations in 250 MHz systems by aligning all data/address/control sampling to CLK edge - reduces board-level timing closure effort.
User-selectable burst mode MODE pin configures interleaved (Pentium) or linear addressing at power-on - avoids firmware rework when migrating between processor families.
Synchronous self-timed writes On-chip write sequencing removes external write-strobe timing constraints - simplifies controller logic and guarantees write completion within fixed clock cycles.
JTAG boundary scan (IEEE 1149.1) Enables in-system testability of PCB interconnects without physical probe access - critical for high-density cache module assemblies.
Dual I/O voltage support VDDQ selectable between 2.5 V and 3.3 V - permits direct interfacing with mixed-voltage SoCs or FPGAs without level-shifter components.

Applications

Secondary Cache Memory Network Packet Buffer

Use Scenario: High-speed L2 cache for x86-compatible embedded processors operating at ≥200 MHz bus frequency.

IC Role / Device Role / Timing Role: Pipelined synchronous SRAM providing deterministic 2.6 ns tCO and 3-1-1-1 burst access rate to minimize CPU stall cycles.

Use Value: Enables single-cycle cache hits under sustained 250 MHz bus load, directly improving instruction throughput in real-time control applications.

Use Scenario: Temporary storage for variable-length Ethernet frames in Layer-2 switching ASICs with burst-oriented DMA engines.

IC Role / Device Role / Timing Role: Burst-mode SRAM buffering incoming/outgoing packets with interleaved addressing to match switch fabric arbitration patterns.

Use Value: Reduces packet drop rate during traffic bursts by sustaining 4-byte-wide writes at 250 MHz without external write-strobe generation logic.

Industrial Motion Controller Buffer Avionics Data Acquisition Module

Use Scenario: Real-time interpolation buffer feeding multi-axis servo drives with jitter-sensitive position commands.

IC Role / Device Role / Timing Role: Deterministic-access SRAM holding trajectory segments synchronized to system clock domain via ADSP-initiated reads.

Use Value: Guarantees sub-3 ns output validity window for position update signals - meeting <1 µs jitter requirement in Class C motion control.

Use Scenario: Radiation-tolerant telemetry buffer in satellite payload subsystems capturing sensor samples at 100 kS/s with burst upload capability.

IC Role / Device Role / Timing Role: JTAG-testable SRAM storing time-tagged ADC samples prior to downlink transmission using linear burst reads.

Use Value: Provides traceable, field-verifiable memory integrity via IEEE 1149.1 scan chain - satisfying DO-254 Level A hardware assurance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102436B 1M × 36, 250 MHz, but lacks JTAG boundary scan and ZZ sleep mode; uses single VDD (3.3 V only) for core/I/O. No built-in test infrastructure; unsuitable for safety-critical avionics where scan-chain verification is mandated. Select when JTAG and low-power sleep are not required, and cost sensitivity outweighs testability needs.
Microchip 21SP1636 1M × 36, 200 MHz max, supports 1.8 V I/O, includes integrated parity bits - no burst counter or ADV/ADSP/ADSC interface. Designed for error-resilient industrial controllers; incompatible with Pentium-style burst protocols due to missing ADV/ADSC logic. Select when ECC/parity protection is prioritized over burst bandwidth, and system clock ≤200 MHz.

Compared with IS61WV102436B and 21SP1636, CY7C1440AV33-250BZXI uniquely delivers JTAG testability, ZZ sleep mode, and native Pentium-compatible burst control - making it irreplaceable in certified aerospace and high-assurance embedded cache designs.

Availability

CY7C1440AV33-250BZXI is available at Aetrix Electronics and suitable for secondary cache memory, network packet buffering, industrial motion controller buffering, and avionics data acquisition modules requiring stable component supply across extended product lifecycles.

Supply support for CY7C1440AV33-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1440AV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable cache and buffer applications in CPU-adjacent subsystems where deterministic timing and JEDEC-compliant I/O are mandatory.

FAQ

What is the function of the MODE pin on CY7C1440AV33-250BZXI?

The MODE pin selects burst address sequence behavior at power-up: LOW configures interleaved burst order (compatible with Intel Pentium™ processors), HIGH selects linear burst order. It is sampled once during initialization and cannot be changed dynamically during operation. This setting determines how the internal two-bit counter increments addresses during ADV-driven burst cycles.

Can CY7C1440AV33-250BZXI operate with only 2.5 V I/O supply?

Yes - VDDQ may be set to 2.5 V while maintaining 3.3 V on VDD for core operation. All I/O pins (DQs, DQPX, BWA–BWD, etc.) are JESD8-5 compliant and tolerate 2.5 V logic levels. However, OE and ZZ remain referenced to VDDQ, so their voltage thresholds scale accordingly; no level shifters are needed when interfacing with 2.5 V controllers.

How does the ZZ sleep mode affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with typical standby current reduced to 120 mA (same as CMOS standby), while preserving all stored data. Clock (CLK) and address/control inputs may be inactive during sleep. Data integrity is maintained indefinitely as long as VDD and VDDQ remain within specification - no refresh or external intervention is required.

Is JTAG boundary scan functional when the device is in ZZ sleep mode?

No - JTAG operation (TCK, TMS, TDI, TDO) is disabled during ZZ sleep mode. Boundary scan functionality requires active core power and clock domain stability; asserting ZZ halts TAP controller state machine progression. To perform JTAG testing, ZZ must be held LOW or floating (its internal pull-down ensures this default), and CLK must be running.

CY7C1440AV33-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.6 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1440AV33-250BZXI FAQ

1.How can I place an order for CY7C1440AV33-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1440AV33-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1440AV33-250BZXI reliable?

The price and inventory of CY7C1440AV33-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1440AV33-250BZXI is usually 5 days.

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CY7C1440AV33-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1440AV33-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1440AV33-250BZXI?

For technical support, including CY7C1440AV33-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1440AV33-250BZXI requirements.

6.How does Aetrix verify that CY7C1440AV33-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1440AV33-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1440AV33-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1440AV33-250BZXI?

All CY7C1440AV33-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1440AV33-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1440AV33-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1440AV33-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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