Infineon Technologies CY7C1440KV25-250BZXI

Overview

CY7C1440KV25-250BZXI from Cypress Semiconductor is a 36-Mbit (1M × 36) pipelined synchronous SRAM with 2.5 V core/I/O supplies, 250 MHz bus operation support, 2.5 ns clock-to-output delay, registered inputs/outputs, and IEEE 1149.1 JTAG boundary scan - deployed in high-speed cache subsystems for Pentium-class processors and network packet buffering.

For engineers reviewing the CY7C1440KV25-250BZXI datasheet, CY7C1440KV25-250BZXI pinout, CY7C1440KV25-250BZXI application, or CY7C1440KV25-250BZXI equivalent, key selection criteria include burst mode configuration (linear vs. interleaved), byte-write granularity (1–4 bytes via BWA–BWD/BWE/GW), synchronous self-timed write timing, ZZ sleep mode behavior, and FBGA-165 package thermal/mechanical constraints.

Technical Context

This SRAM implements a two-bit wraparound burst counter synchronized to CLK's rising edge, with address latching controlled by ADSP (processor strobe) or ADSC (controller strobe). Burst sequence order (interleaved or linear) is statically selected via the MODE pin, supporting Pentium-compatible memory access patterns.

All synchronous inputs - including A[1:0], CE1/CE2/CE3, ADSP/ADSC/ADV, BWA–BWD, BWE, GW, and OE - are registered on the rising CLK edge. Asynchronous controls (OE, ZZ) bypass registration but affect output tristate and power state independently of clock timing.

Key Specifications

Pinout & Package

The CY7C1440KV25-250BZXI is housed in a 15 mm × 17 mm × 1.4 mm 165-ball Fine-Pitch Ball Grid Array (FBGA) package with JEDEC-standard ball pitch (0.8 mm) and Pb-free finish. Thermal resistance θJA = 32 °C/W (JEDEC JESD51-2, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102436BLL-250TQLI and MT45W16G32FZ-250:K, the CY7C1440KV25-250BZXI uniquely delivers deterministic pipelined timing, JTAG testability, and FBGA packaging optimized for high-frequency routing - making it irreplaceable in cache-critical or production-test-constrained designs.

Availability

CY7C1440KV25-250BZXI is available at Aetrix Electronics and suitable for processor cache subsystems, network packet buffering, industrial motion controllers, and automated test equipment requiring stable component supply, long-lifecycle support, and Pb-free compliance.

Supply support for CY7C1440KV25-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with expertise in synchronous SRAM, NOR Flash, and PSoC architectures.

The CY7C1440KV25 belongs to Cypress's high-speed pipelined SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in CPU caches, telecom infrastructure, and real-time control applications.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst address order: tied to GND for linear burst, tied to VDD (or left floating, due to internal pull-up) for interleaved burst. It is a static strap pin - configuration must be fixed before device operation begins and cannot be changed dynamically. Incorrect strapping causes misaligned burst sequences and data corruption in cache line fills.

How does the ZZ sleep mode interact with ongoing read/write operations?

Asserting ZZ HIGH places the device in low-power retention mode after completing any active read or write cycle; no new accesses are accepted until ZZ returns LOW. Data remains valid throughout sleep, but outputs go high-impedance and internal clocks halt. The internal pull-down ensures safe default operation if ZZ is unconnected.

Can ADSP and ADSC be used simultaneously, and what happens if both are asserted?

No - ADSP and ADSC are mutually exclusive. When both are asserted LOW, the device recognizes only ADSP and ignores ADSC. This priority prevents ambiguous address capture. CE1 must also be active LOW for either strobe to take effect; if CE1 is HIGH, both ADSP and ADSC are masked regardless of level.

What is the role of the ADV signal during a burst read initiated by ADSP?

During an ADSP-initiated burst read, ADV must be asserted LOW on each subsequent CLK edge to advance the internal two-bit burst counter and generate the next sequential address. Without ADV assertion, the SRAM repeats the initial address - effectively performing single-word reads instead of burst transfers.