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Infineon Technologies CY7C1440KV25-250BZXIT

Part No.:
CY7C1440KV25-250BZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1440KV25-250BZXIT.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,548

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Product details

Overview

CY7C1440KV25-250BZXIT from Cypress Semiconductor is a 36-Mbit (1M × 36) pipelined synchronous SRAM with 2.5-V core/I/O supplies, 250 MHz bus operation support, 2.5 ns clock-to-output delay, and IEEE 1149.1 JTAG boundary scan - deployed in high-speed cache subsystems for embedded processors requiring deterministic burst access.

For engineers reviewing the CY7C1440KV25-250BZXIT datasheet, CY7C1440KV25-250BZXIT pinout, CY7C1440KV25-250BZXIT application, or CY7C1440KV25-250BZXIT equivalent, key selection criteria include synchronous burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), ZZ sleep mode behavior, and 165-ball FBGA mechanical compatibility.

Technical Context

The device implements a two-bit synchronous wraparound burst counter controlled by ADV, with burst order (interleaved or linear) selected statically via MODE pin. All address, data, and control inputs-except OE and ZZ-are registered on the rising edge of CLK, enabling precise pipelined timing at 250 MHz.

Write operations are self-timed and synchronous: GW enables full-word writes, while BWE and BWA–BWD enable selective byte writes. Output drivers are tristated automatically during writes regardless of OE state, and OE remains asynchronous to support flexible bus handshaking.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (1M × 36) - supports 36-bit wide data paths without external width expansion
Max Clock Frequency250 MHz - defines maximum sustained burst throughput of 9 Gbps (36 bits × 250 MHz)
Access Time (tCO)2.5 ns - guarantees deterministic output valid window after CLK rise for timing-critical cache interfaces
Core & I/O Voltage2.5 V ±0.2 V - requires single-supply rail design; VDDQ and VDD are separate but identical voltage domains
Burst SupportInterleaved or linear - MODE pin selects Pentium-compatible interleaved or sequential addressing for CPU coherency
Byte Write ControlFour independent BWX pins + BWE - enables partial-word updates without read-modify-write cycles
Sleep ModeZZ active-HIGH - reduces standby current while preserving data; internal pull-down ensures safe default LOW state

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
CLKClock InputRising-edge-triggered master timing reference for all synchronous registers and burst counter increment
ADSP / ADSCAddress Strobe InputsAsynchronous initiation signals for processor- or controller-initiated accesses; sampled synchronously on CLK rise
ADVBurst Advance ControlActive-LOW signal that increments internal two-bit burst counter on next CLK edge
BWA–BWD, BWE, GWWrite Control InputsEnable byte-select (BWX + BWE) or full-word (GW) synchronous writes; all sampled on CLK rise
OEOutput EnableAsynchronous, active-LOW control of I/O direction; outputs tristated during write regardless of OE state
ZZDeep Sleep InputAsynchronous, active-HIGH entry into low-power retention mode; internal pull-down ensures safe default
DQs / DQPA–DQPDData I/O36-bit bidirectional data bus (DQA–DQD = 32-bit; DQPA–DQPD = 4 parity bits); common I/O architecture
CE1, CE2, CE3Chip Enable InputsSynchronous bank selection: CE1 active-LOW, CE2 active-HIGH, CE3 active-LOW (NC in FBGA but logically required)

Key Features

FeatureDesign Value
Pipelined Synchronous InterfaceFull register-to-register timing path eliminates setup/hold violations at 250 MHz, enabling direct connection to high-speed microprocessor buses
User-Selectable Burst OrderMODE pin configures interleaved (Pentium-compatible) or linear burst addressing - no firmware overhead or configuration register writes required
Synchronous Self-Timed WritesOn-chip write sequencing eliminates external write pulse generation; GW/BWE/BWX fully resolve within two CLK cycles
JTAG Boundary Scan (IEEE 1149.1)Integrated TAP controller with TDO, TCK, TMS, TDI supports board-level interconnect test without additional test logic
Single-Cycle Chip DeselectDeasserting CE1 on CLK rise immediately disables memory access and tristates outputs - critical for multi-bank arbitration

Applications

Processor Cache MemoryNetwork Packet Buffer

Use Scenario: Secondary cache for x86 or RISC processors requiring burst-aligned 36-bit data fetches with sub-3 ns output latency.

IC Role / Device Role / Timing Role: Pipelined SRAM acting as L2 cache tag/data store with ADSP/ADSC-driven address capture and ADV-controlled burst advancement.

Use Value: Eliminates wait states in 250 MHz CPU interfaces by guaranteeing 2.5 ns tCO and supporting 3-1-1-1 access rate for consecutive reads.

Use Scenario: High-throughput packet buffering in Ethernet switch ASICs handling 10G+ line rates with variable-length frame storage.

IC Role / Device Role / Timing Role: Synchronous burst buffer staging incoming/outgoing frames; uses byte-write capability to update header fields without full-word overwrite.

Use Value: Enables zero-cycle header modification via BWA–BWD + BWE, reducing packet processing latency versus DRAM-based buffers.

Industrial Motion ControllerAvionics Data Recorder

Use Scenario: Real-time trajectory lookup table storage in servo drive controllers requiring deterministic access under hard real-time deadlines.

IC Role / Device Role / Timing Role: Deterministic-access SRAM holding motion profile coefficients; ZZ sleep mode engaged between motion segments to reduce thermal load.

Use Value: Maintains data integrity during ZZ sleep while cutting standby current - critical for convection-cooled enclosures with strict power budgets.

Use Scenario: Non-volatile flight data buffering in DO-254-compliant recorders where SRAM retains last-minute telemetry before power loss.

IC Role / Device Role / Timing Role: High-reliability burst buffer capturing sensor streams; JTAG boundary scan validates solder joint integrity per avionics test requirements.

Use Value: IEEE 1149.1 compliance enables automated structural test coverage without custom test fixtures - reducing certification effort.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISSI IS61WV102436B2.5 V core/I/O, 250 MHz, same 1M × 36 density and 165-ball FBGA, but lacks JTAG and ZZ sleep modeNo built-in boundary scan or deep sleep - requires external test strategy and higher standby power managementSelect when JTAG testability and ultra-low-power sleep are not required; lower cost alternative
Microchip SST26VF064BSerial Quad SPI Flash (not SRAM), 64 Mbit, 3 V only, asynchronous interface, no burst counter or pipeliningFundamentally different architecture: non-volatile, slower random access, no synchronous burst - unsuitable for cache replacementNot a functional substitute; only consider for non-real-time firmware storage where volatility is acceptable

Compared with IS61WV102436B, CY7C1440KV25-250BZXIT adds JTAG testability and ZZ sleep for aerospace/industrial use cases; SST26VF064B is architecturally incompatible due to serial interface and flash volatility - neither serves as drop-in replacement.

Availability

CY7C1440KV25-250BZXIT is available at Aetrix Electronics and suitable for processor cache memory, network packet buffering, industrial motion control, and avionics data recording requiring stable component supply across extended product lifecycles.

Supply support for CY7C1440KV25-250BZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with focus on reliability, timing precision, and system-level integration.

The CY7C1440KV25 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic burst-access applications in CPU caches, telecom infrastructure, and real-time control systems.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst addressing order: tied to GND for linear burst, or to VDD/floating for interleaved burst (Pentium-compatible). It is a static strap pin - must remain unchanged during operation. Internal pull-up ensures safe default to interleaved mode if left unconnected.

Does CY7C1440KV25-250BZXIT support true dual-port operation?

No. It is a single-port synchronous SRAM with common I/O pins. While it supports concurrent read and write operations in pipelined mode, it does not provide simultaneous independent access via separate read/write ports - unlike true dual-port SRAMs used in FIFO or buffer applications.

How does the ZZ sleep mode interact with data retention and wake-up timing?

When ZZ is driven HIGH, the device enters non-time-critical sleep with full data retention and reduced current draw. Wake-up is immediate upon ZZ returning LOW; no recovery delay or reinitialization is required. The internal pull-down ensures safe default LOW state during power-up.

Can CE2 and CE3 be omitted in a simple single-SRAM system?

CE2 is active-HIGH and CE3 is active-LOW; both are sampled synchronously on CLK rise. In a single-device system, CE2 must be held HIGH and CE3 held LOW (or NC per package note) to satisfy chip select logic. Leaving them unconnected risks metastability - they must be actively biased per datasheet recommendations.

CY7C1440KV25-250BZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.6 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1440KV25-250BZXIT FAQ

1.How can I place an order for CY7C1440KV25-250BZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1440KV25-250BZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1440KV25-250BZXIT reliable?

The price and inventory of CY7C1440KV25-250BZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1440KV25-250BZXIT is usually 5 days.

3.What payment methods are accepted for CY7C1440KV25-250BZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1440KV25-250BZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1440KV25-250BZXIT?

CY7C1440KV25-250BZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1440KV25-250BZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1440KV25-250BZXIT?

For technical support, including CY7C1440KV25-250BZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1440KV25-250BZXIT requirements.

6.How does Aetrix verify that CY7C1440KV25-250BZXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1440KV25-250BZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1440KV25-250BZXIT meets industry standards.

7.What is the process for return or replacement of CY7C1440KV25-250BZXIT?

All CY7C1440KV25-250BZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1440KV25-250BZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1440KV25-250BZXIT part is unused and in its original packaging.

Return procedure for CY7C1440KV25-250BZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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