Infineon Technologies CY7C1440KV33-250BZXI

Overview

CY7C1440KV33-250BZXI from Cypress Semiconductor is a 36-Mbit pipelined synchronous SRAM with on-chip ECC, configured as 1M × 36, operating at 250 MHz with 2.5 ns clock-to-output delay, 3.3 V core supply, and dual-voltage I/O (2.5 V/3.3 V). It serves as high-speed secondary cache in Pentium-class processor systems requiring burst-mode data integrity.

For engineers reviewing the CY7C1440KV33-250BZXI datasheet, CY7C1440KV33-250BZXI pinout, CY7C1440KV33-250BZXI application, or CY7C1440KV33-250BZXI equivalent, key selection criteria include pipelined burst timing (3-1-1-1 access rate), user-selectable interleaved/linear burst mode, synchronous self-timed writes, IEEE 1149.1 JTAG boundary scan, and ZZ sleep mode support.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter, registered address/data inputs, and pipelined output registers-all synchronized to CLK's rising edge. Burst initiation is controlled by ADSP (processor) or ADSC (controller), with address advancement triggered by ADV.

ECC encoding/decoding is fully integrated and transparent to system logic, correcting single-bit errors and detecting double-bit errors in real time. The device supports byte-write granularity via BWA–BWD and BWE, plus global write via GW, all sampled synchronously on CLK.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (Pb-free), 165-ball FBGA (Pb-free and non-Pb-free options). Pinout validated per Cypress Document 001-66676 Rev. *G, Figure 1 (TQFP) and Figure 2 (FBGA).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102436BLL-250BLI and MT28EW256AABA1HPC-0SIT, the CY7C1440KV33-250BZXI uniquely combines 250 MHz pipelined timing, integrated ECC, and dual-voltage I/O in a pin-compatible TQFP package-making it optimal for deterministic, high-integrity cache subsystems.

Availability

CY7C1440KV33-250BZXI is available at Aetrix Electronics and suitable for processor cache interfaces, network packet buffers, and industrial PLC memory expansion requiring stable component supply across extended product lifecycles.

Supply support for CY7C1440KV33-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications systems.

The CY7C1440KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-mode cache applications in x86-compatible and custom embedded processors.

FAQ

Does CY7C1440KV33-250BZXI support both interleaved and linear burst modes?

Yes. The MODE pin selects burst order: LOW configures interleaved addressing (Pentium-compatible), HIGH selects linear addressing. This setting is sampled at power-up or reset and remains static during operation unless reconfigured externally.

What is the function of the ZZ pin, and how does it affect power consumption?

The ZZ pin is an asynchronous, active-HIGH sleep control. When asserted, the device enters a low-power state with full data retention and no timing constraints. Typical standby current drops to 50 µA (max) at 85°C, enabling energy-efficient idle periods in battery-backed or thermally constrained systems.

Can CY7C1440KV33-250BZXI operate with 2.5 V I/O while using 3.3 V core supply?

Yes. VDDQ (I/O supply) and VDD (core supply) are independent. The device supports 2.5 V VDDQ with 3.3 V VDD simultaneously, allowing direct interfacing with 2.5 V FPGAs or ASICs without level translation, while maintaining full 250 MHz performance and ECC functionality.

How is on-chip ECC implemented, and does it impact access timing?

ECC encoding and decoding occur transparently within the memory array path. Single-bit correction and double-bit detection add no latency to read/write cycles-the 2.5 ns tCO and 3-1-1-1 burst rate are specified with ECC enabled and fully operational.