Infineon Technologies CY7C1441AV33-133AXCT

Overview

CY7C1441AV33-133AXCT from Cypress Semiconductor is a 36-Mbit synchronous flow-through SRAM configured as 1M × 36, supporting 133-MHz bus operations with 6.5 ns clock-to-output delay, 3.3V core supply, and dual-voltage I/O (2.5V/3.3V). It interfaces directly with high-speed microprocessors and cache controllers in memory subsystems requiring burst-access performance and low-latency read/write cycles.

For engineers reviewing the CY7C1441AV33-133AXCT datasheet, CY7C1441AV33-133AXCT pinout, CY7C1441AV33-133AXCT application, or CY7C1441AV33-133AXCT equivalent, key selection considerations include synchronous burst timing (2-1-1-1 access rate), user-selectable interleaved/linear burst mode via MODE pin, separate ADSP/ADSC strobes for processor/controller address latching, and JEDEC-standard JTAG boundary-scan support.

Technical Context

The device implements a synchronous, flow-through architecture with a 2-bit on-chip burst counter that captures A[1:0] at the rising edge of CLK when ADSP or ADSC is asserted, then auto-increments addresses during burst sequences. All synchronous inputs-including address, data, CE1/CE2/CE3, BWx, BWE, GW, ADV, ADSP, ADSC, and MODE-are registered on CLK's positive edge.

Asynchronous controls OE and ZZ operate independently of CLK: OE enables tri-state output control during reads, while ZZ places the device in low-power sleep mode with data retention. I/O voltage separation (VDDQ = 2.5V or 3.3V) ensures compatibility with mixed-voltage system buses, and all I/Os comply with JEDEC JESD8-5 standards.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (JEDEC-standard Pb-free), 165-ball FBGA (15 × 17 × 1.4 mm); both packages support identical pin functions and electrical behavior.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with CY7C1443AV33-133AXCT, the CY7C1441AV33-133AXCT provides native 36-bit interface and full DQP parity lanes; versus IS61WV102436BLL-133TQLI, it offers superior system integration via MODE-selectable burst, JTAG, and VDDQ voltage independence-justifying use in high-assurance computing and test platforms.

Availability

CY7C1441AV33-133AXCT is available at Aetrix Electronics and suitable for cache memory subsystems, high-speed network buffers, industrial motion controllers, and test equipment pattern memory requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1441AV33-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory interfacing in CPU cache, networking, and real-time control applications where deterministic timing and JEDEC compliance are mandatory.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence type: HIGH (or floating, due to internal pull-up) enables Intel Pentium-style interleaved bursts; LOW (tied to GND) selects linear bursts. It is a static strap pin-must be set before operation and held stable during all accesses. Incorrect configuration causes misaligned burst addressing and data corruption.

Can CY7C1441AV33-133AXCT operate with only 3.3V supplies, or is 2.5V VDDQ mandatory?

VDDQ may be either 2.5V or 3.3V-no second supply is mandatory. Using 3.3V VDDQ simplifies power design when interfacing with 3.3V logic; 2.5V VDDQ is required only when connecting to 2.5V I/O domains (e.g., certain FPGA banks or DDR controllers). Both configurations meet JEDEC JESD8-5 voltage thresholds.

How does the ZZ sleep mode interact with ongoing burst operations?

Asserting ZZ HIGH during an active burst terminates further address increments and places outputs in high-impedance state after current cycle completes. Data remains retained. No special sequencing is needed-ZZ is fully asynchronous and safe to assert at any time, including mid-burst, without violating timing or corrupting memory contents.

Is JTAG boundary scan supported in the 100-pin TQFP package?

No-JTAG signals (TCK, TMS, TDI, TDO) are only present in the 165-ball and 209-ball FBGA packages. The 100-pin TQFP omits these pins entirely; boundary scan is unavailable in that package variant. Designers requiring JTAG must select the FBGA option and route the dedicated test pins accordingly.