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Infineon Technologies CY7C1441AV33-133BZI

Part No.:
CY7C1441AV33-133BZI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1441AV33-133BZI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,077

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Product details

Overview

CY7C1441AV33-133BZI from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous flow-through SRAM designed for high-speed secondary cache interfacing in Pentium-class microprocessor systems. It supports 133-MHz bus operations with 6.5 ns clock-to-output delay, 3.3 V core supply, dual-voltage I/O (2.5 V or 3.3 V), and user-selectable interleaved/linear burst sequences via the MODE pin.

For engineers reviewing the CY7C1441AV33-133BZI datasheet, CY7C1441AV33-133BZI pinout, CY7C1441AV33-133BZI application, or CY7C1441AV33-133BZI equivalent, key selection criteria include burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), synchronous self-timed write, ZZ sleep mode, and JTAG boundary-scan compliance for system-level testability.

Technical Context

The device implements a 2-bit on-chip wraparound burst counter that captures A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst reads/writes. All synchronous inputs-including address, CE1/CE2/CE3, ADSP/ADSC/ADV, BWx, BWE, GW, and CLK-are registered on the rising edge of CLK, enabling precise timing control in pipelined cache architectures.

Asynchronous controls-OE and ZZ-operate independently of CLK: OE enables tri-state output control during read cycles, while ZZ places the device in low-power sleep with data retention. The MODE pin statically selects interleaved (Pentium-compatible) or linear burst order, and DQPx parity I/O lines mirror DQx functionality with byte-aligned parity support.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization) - provides full-word cache line storage for 32-bit+ data paths with parity.
Max Clock Frequency 133 MHz - enables 7.5 ns clock period timing for high-bandwidth processor interface synchronization.
Access Time (tCDV) 6.5 ns - defines worst-case clock-to-data-valid delay for timing-critical cache hit response.
Core Supply Voltage 3.3 V ± 0.3 V - powers internal logic and memory array; requires stable low-noise regulation.
I/O Supply Voltage 2.5 V or 3.3 V - supports mixed-voltage system integration with legacy or low-power I/O domains.
Burst Mode Control MODE pin (static strap) - selects Intel Pentium interleaved or linear sequence without runtime reconfiguration.
Power Dissipation 310 mA max operating current - informs thermal design for TQFP/FBGA packages in sustained burst operation.

Pinout & Package

CY7C1441AV33-133BZI is available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. The "BZI" suffix denotes the industrial-grade TQFP variant with extended temperature range (–40°C to +85°C).

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference for all registered inputs and burst counter advancement.
ADSP / ADSC Address strobe inputs ADSP initiates processor-originated bursts; ADSC supports controller-initiated access; ADSP takes priority when both asserted.
ADV Burst address advance Asserted on CLK rise to increment internal burst counter; enables sequential address generation without external address bus updates.
BWA–BWD, BWE Byte write control Four independent byte-enable signals qualified by BWE; enable selective 8-bit writes within 36-bit word without masking logic.
GW Global write enable Overrides all BWx/BWE states to perform full 36-bit word write - simplifies cache line fill or initialization sequences.
ZZ Asynchronous sleep control Active-HIGH entry into low-power state with data retention; eliminates need for external power gating in idle cache periods.
OE Asynchronous output enable Tri-states DQ/DQP outputs independently of CLK - allows dynamic bus sharing and avoids contention during write cycles.
MODE Burst sequence selector Static configuration pin: HIGH = interleaved (Pentium), LOW = linear; must be stable during operation per datasheet spec.

Key Features

Feature Design Value
Flow-through architecture Eliminates pipeline latency between consecutive burst accesses - delivers deterministic 2-1-1-1 access rate for cache line fills.
Synchronous self-timed write On-chip write timing control removes external write pulse generation - reduces PCB routing complexity and timing margin risk.
JTAG boundary scan (IEEE 1149.1) Enables board-level interconnect test without physical probe access - critical for high-density CPU/cache module validation.
Dual-voltage I/O support Allows direct interface to 2.5 V or 3.3 V logic domains without level shifters - simplifies migration from older 3.3 V to newer low-voltage SoCs.
Separate processor/controller address strobes ADSP and ADSC provide dedicated burst initiation paths - supports split-cache or multi-master bus arbitration schemes.

Applications

Intel Pentium Cache Subsystem High-Performance Embedded Controller Cache

Use Scenario: Secondary cache buffer between Pentium processor and main memory in embedded industrial controllers.

IC Role / Device Role / Timing Role: Flow-through SRAM serving as synchronous burst-accessible cache line store with interleaved addressing.

Use Value: 6.5 ns tCDV and 133-MHz operation meet Pentium's tight burst timing requirements without glue logic.

Use Scenario: Real-time DSP cache in motor control or power electronics gate driver modules requiring deterministic latency.

IC Role / Device Role / Timing Role: Low-latency instruction/data cache with ZZ sleep mode for power-gated idle intervals.

Use Value: Asynchronous ZZ control enables rapid entry/exit from low-power state while preserving cache contents.

Multi-Processor Shared Memory Buffer Test Equipment Pattern Memory

Use Scenario: Shared memory pool accessed concurrently by dual ARM Cortex-A cores via AXI coherency extensions.

IC Role / Device Role / Timing Role: Synchronous SRAM with CE2/CE3 depth-expansion support for banked memory mapping.

Use Value: Three chip enables (CE1/CE2/CE3) allow seamless 72-Mbit expansion using identical parts without redesign.

Use Scenario: High-speed pattern storage in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Burst-capable memory delivering deterministic 133-MHz waveform data to DAC interfaces.

Use Value: 2-1-1-1 access rate ensures continuous streaming without gaps during high-frequency test vector playback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102436BLL-133TQLI 133-MHz 36-Mbit sync SRAM; 3.3 V core/I/O only (no 2.5 V I/O option); no JTAG; different pinout (119-pin TQFP). Lacks dual-voltage I/O and boundary scan - unsuitable for mixed-voltage or high-reliability test environments. Select when cost sensitivity outweighs JTAG testability and I/O flexibility requirements.
MT55LCS036S133A1 133-MHz 36-Mbit flow-through SRAM; 3.3 V core/I/O; supports linear burst only; no ZZ sleep mode. No asynchronous sleep control or interleaved burst - limits use in power-constrained or Pentium-compatible designs. Choose for linear-burst-only systems where ZZ mode and Pentium compatibility are not required.

Compared with IS61WV102436BLL-133TQLI and MT55LCS036S133A1, CY7C1441AV33-133BZI uniquely combines dual-voltage I/O, JTAG testability, ZZ sleep, and selectable burst modes - making it the only option for Pentium-class cache with production test coverage and power-aware operation.

Availability

CY7C1441AV33-133BZI is available at Aetrix Electronics and suitable for Intel Pentium cache subsystems, high-performance embedded controller caches, multi-processor shared memory buffers, and ATE pattern memory applications requiring stable component supply across extended industrial temperature ranges.

Supply support for CY7C1441AV33-133BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1441AV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-mode cache interfacing in x86 and embedded processor platforms requiring deterministic timing and robust testability.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst sequence order: HIGH (or floating) enables Intel Pentium-compatible interleaved addressing, while LOW (tied to GND) selects linear burst. It is a static strap pin - configuration must be fixed before device operation and cannot be changed dynamically. Internal pull-up ensures default interleaved mode if left unconnected.

Does CY7C1441AV33-133BZI support true 2.5 V I/O operation, and what are the voltage tolerance limits?

Yes - the device supports true 2.5 V I/O operation with VDDQ = 2.5 V ± 0.2 V, while maintaining full 3.3 V core (VDD = 3.3 V ± 0.3 V). Input thresholds are JESD8-5-compliant, allowing reliable interfacing with 2.5 V logic families without level shifters or external biasing networks.

How does the ZZ sleep mode interact with ongoing burst operations or write cycles?

ZZ is asynchronous and active-HIGH: asserting ZZ immediately halts all internal operations, places outputs in high-impedance state, and reduces current to 120 mA standby. It preserves data integrity but terminates any in-progress burst or write - no handshake or completion wait is required before entry.

Can ADSP and ADSC be used simultaneously, and what happens if both are asserted?

No - ADSP and ADSC are mutually exclusive. When both are asserted LOW, the device recognizes only ADSP and ignores ADSC. This priority hierarchy ensures deterministic burst initiation in systems where processor and controller strobes may overlap, preventing ambiguous address capture.

CY7C1441AV33-133BZI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1441AV33-133BZI FAQ

1.How can I place an order for CY7C1441AV33-133BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1441AV33-133BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1441AV33-133BZI reliable?

The price and inventory of CY7C1441AV33-133BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1441AV33-133BZI is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1441AV33-133BZI transactions.

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CY7C1441AV33-133BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1441AV33-133BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1441AV33-133BZI?

For technical support, including CY7C1441AV33-133BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1441AV33-133BZI requirements.

6.How does Aetrix verify that CY7C1441AV33-133BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1441AV33-133BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1441AV33-133BZI meets industry standards.

7.What is the process for return or replacement of CY7C1441AV33-133BZI?

All CY7C1441AV33-133BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1441AV33-133BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1441AV33-133BZI part is unused and in its original packaging.

Return procedure for CY7C1441AV33-133BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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