Infineon Technologies CY7C1441KV33-133AXIT

Overview

CY7C1441KV33-133AXIT from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous flow-through SRAM with on-chip ECC, configured as 1M × 36 common I/O, supporting 133 MHz bus operations with 6.5 ns clock-to-output delay. It operates from a 3.3 V core supply and 2.5/3.3 V I/O supply, and is used in high-speed cache subsystems for embedded processors requiring error-resilient, low-latency memory access.

For engineers reviewing the CY7C1441KV33-133AXIT datasheet, CY7C1441KV33-133AXIT pinout, CY7C1441KV33-133AXIT application, or CY7C1441KV33-133AXIT equivalent, key selection criteria include burst mode flexibility (interleaved/linear), synchronous self-timed write capability, IEEE 1149.1 JTAG support, ZZ sleep mode, and JEDEC-standard TQFP-100 packaging.

Technical Context

This SRAM implements a synchronous flow-through architecture with a 2-bit on-chip burst counter that captures A[1:0] at the rising edge of CLK when ADSP or ADSC is active, enabling automatic address incrementing during burst sequences. All synchronous inputs-including addresses, CE1/CE2/CE3, BWx, BWE, GW, ADSC, ADSP, ADV, and MODE-are registered on the positive clock edge.

Asynchronous controls include OE (output enable) and ZZ (sleep mode), both active-low (OE) or active-high (ZZ), with OE overriding output direction independently of clock timing. The device supports dual I/O voltage operation (2.5 V or 3.3 V), complies with JESD8-5, and integrates ECC encoding/decoding to reduce soft error rate without external logic.

Key Specifications

Pinout & Package

The CY7C1441KV33-133AXIT is packaged in a JEDEC-standard 100-pin Thin Quad Flat Package (TQFP) with exposed thermal pad, lead-free and RoHS-compliant. Pin assignments are validated per Figure 1 of datasheet 001-66677 Rev. *J.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed ECC SRAM applications.

Compared with IS61WV102436BLL-133TQLI and MT28EW128AABA1HPC-0S1, the CY7C1441KV33-133AXIT uniquely delivers integrated ECC, deterministic 6.5 ns access, and true synchronous flow-through operation-making it irreplaceable for applications demanding both speed and radiation-hardened data integrity without design-layer complexity.

Availability

CY7C1441KV33-133AXIT is available at Aetrix Electronics and suitable for high-reliability embedded computing, avionics data buffering, and medical imaging systems requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1441KV33-133AXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive MCUs, and high-performance memory solutions.

This device belongs to Infineon's legacy Cypress SRAM product line, designed specifically for high-bandwidth, low-latency, ECC-protected memory interfacing in mission-critical embedded and industrial control systems.

FAQ

What is the function of the MODE pin on CY7C1441KV33-133AXIT?

The MODE pin selects burst address sequencing: HIGH configures Intel Pentium-style interleaved bursts (e.g., 0→2→4→6), while LOW enables linear bursts (0→1→2→3). This setting is sampled asynchronously at power-up and remains static during operation unless reconfigured externally. It directly determines how the internal 2-bit burst counter increments addresses during ADV-driven cycles.

Does CY7C1441KV33-133AXIT support both 2.5 V and 3.3 V I/O simultaneously?

No - VDDQ must be set to either 2.5 V or 3.3 V, not both. The device uses a single VDDQ supply pin shared across all DQ and DQP banks. Mixing voltages would violate JESD8-5 compliance and risk latch-up. Designers select one I/O voltage during board layout and maintain it across all connected devices sharing the same bus.

How does the ZZ sleep mode affect timing and power consumption?

When ZZ is driven HIGH, the device enters a non-time-critical retention state: core clocks halt, outputs tri-state, and ICC drops to ≤5 mA (typical). Data is retained indefinitely as long as VDD remains within spec. Exit time to full operation is 20 ns after ZZ returns LOW, with no clock stabilization delay required - unlike deep-sleep modes in other SRAM families.

Can CY7C1441KV33-133AXIT operate without connecting the VSSQ pins?

No - all VSSQ pins (ground for I/O circuitry) must be connected to a low-impedance ground plane. Leaving them unconnected causes undefined I/O behavior, increased noise susceptibility, and potential violation of AC timing specs. The datasheet specifies 12 dedicated VSSQ pins in the TQFP-100 package; omission compromises signal integrity and may trigger bus contention or data corruption.