Infineon Technologies CY7C1441KV33-133AXM

Overview

CY7C1441KV33 from Cypress Semiconductor is a military-temperature 36-Mbit (1M × 36) synchronous flow-through SRAM designed for high-speed secondary cache in embedded computing and defense systems. It supports 133 MHz bus operation with 6.5 ns clock-to-output delay, 3.3 V core supply, dual-voltage I/O (2.5 V or 3.3 V), and user-selectable interleaved/linear burst sequences.

For engineers reviewing the CY7C1441KV33 datasheet, CY7C1441KV33 pinout, CY7C1441KV33 application, or CY7C1441KV33 equivalent, key selection criteria include burst mode control via MODE pin, synchronous self-timed write timing, JTAG boundary-scan support, ZZ sleep mode behavior, and JEDEC-compliant TQFP/FBGA package compatibility.

Technical Context

The CY7C1441KV33 implements a synchronous flow-through architecture with a 2-bit on-chip wraparound burst counter that latches A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst cycles. All synchronous inputs-including address, CE1/CE2/CE3, ADSP/ADSC/ADV, BWx, BWE, GW, and CLK-are registered on the rising edge of CLK.

Asynchronous controls include OE (tristate output enable) and ZZ (high-active sleep mode with data retention). Burst order (interleaved vs. linear) is statically selected by the MODE pin, which has an internal pull-up and must remain static during operation. The device supports both processor-initiated (ADSP) and controller-initiated (ADSC) burst accesses, with ADV controlling internal address advancement.

Key Specifications

Pinout & Package

The CY7C1441KV33 is offered in two JEDEC-standard packages: 100-pin TQFP (14 mm × 14 mm) and 165-ball FBGA (13 mm × 15 mm). Both packages support military temperature range (–55°C to +125°C) operation and Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102436BLL-133TQLI and MT28EW256ABA1HPC-0SIT, the CY7C1441KV33 uniquely delivers military-grade flow-through timing, hardware-configurable burst modes, and integrated JTAG-making it irreplaceable in deterministic, high-reliability cache subsystems.

Availability

CY7C1441KV33 is available at Aetrix Electronics and suitable for avionics flight control systems, secure military radios, tactical radar signal processors, and hardened ground vehicle telematics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1441KV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for aerospace, defense, and industrial markets, with emphasis on radiation-tolerant and extended-temperature performance.

The CY7C1441KV33 belongs to Cypress's military-grade synchronous SRAM product line, engineered specifically for deterministic, low-latency cache applications in safety-critical embedded systems where timing predictability and data integrity under extreme environmental stress are non-negotiable.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin statically selects burst order: HIGH (or floating) enables interleaved addressing compatible with Intel Pentium processors, while LOW (tied to GND) selects linear addressing used by PowerPC and ARM architectures. It must remain static during operation-no dynamic switching-and has an internal pull-up, so leaving it unconnected defaults to interleaved mode.

Does the CY7C1441KV33 support true 2.5 V core operation?

No-the device requires a 3.3 V ±0.3 V core supply (VDD) for internal logic and memory array operation. However, its I/O buffers support selectable 2.5 V or 3.3 V VDDQ, allowing direct connection to 2.5 V controllers without level shifters while maintaining full 3.3 V core functionality and timing specifications.

How does the ZZ sleep mode affect data retention and wake-up timing?

When ZZ is driven HIGH, the device enters a non-time-critical sleep state with data fully retained and core current reduced to <5 µA. Wake-up is asynchronous: asserting ZZ LOW restores full operation within one CLK cycle plus tCDV (6.5 ns), with no initialization or refresh required-ideal for intermittent radar pulse processing or radio duty cycling.

Can ADSP and ADSC be used simultaneously, and what happens if both are asserted?

No-ADSP and ADSC are mutually exclusive. When both are asserted LOW, the device recognizes only ADSP and ignores ADSC. This priority design prevents address capture ambiguity in mixed-processor/controller systems. CE1 must also be active for either strobe to take effect; if CE1 is HIGH, both ADSP and ADSC are masked regardless of state.