Infineon Technologies CY7C1441KV33-133BZM

Overview

CY7C1441KV33 from Cypress Semiconductor is a military-temperature 36-Mbit (1M × 36) synchronous flow-through SRAM designed for high-speed secondary cache in embedded computing and defense systems. It supports 133 MHz bus operation, delivers 6.5 ns clock-to-output delay, operates with 3.3 V core and selectable 2.5 V/3.3 V I/O supplies, and implements synchronous self-timed write with interleaved or linear burst addressing.

For engineers reviewing the CY7C1441KV33 datasheet, CY7C1441KV33 pinout, CY7C1441KV33 application, or CY7C1441KV33 equivalent, key selection criteria include burst mode control via MODE pin, dual address strobe support (ADSP/ADSC), IEEE 1149.1 JTAG boundary scan capability, ZZ sleep mode, and JEDEC-compliant TQFP/FBGA packaging for ruggedized deployment.

Technical Context

The CY7C1441KV33 uses a synchronous architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. A 2-bit on-chip wraparound burst counter captures A[1:0] at ADSP/ADSC assertion and auto-increments addresses during burst sequences.

Burst order-interleaved (MODE = HIGH) or linear (MODE = LOW)-is statically configured and determines memory access pattern compatibility with Pentium-class processors. Address advancement is controlled by ADV, while CE1 (active-low), CE2 (active-high), and CE3 (active-low) enable depth-expansion and bank selection in multi-chip configurations.

Key Specifications

Pinout & Package

Available in JEDEC-standard 100-pin TQFP (14 mm × 20 mm) and 165-ball FBGA (13 mm × 15 mm) Pb-free packages. Both packages support military-grade thermal and mechanical reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with IS61WV102436BLL-133TQLI and MT48LC32M36A2-133:G, the CY7C1441KV33 uniquely combines military-temperature flow-through SRAM performance, JTAG testability, and hardware sleep control-making it irreplaceable in deterministic, safety-critical, and low-power embedded systems where timing predictability and in-field diagnostics are mandatory.

Availability

CY7C1441KV33 is available at Aetrix Electronics and suitable for avionics flight control units, military radar signal processors, tactical electronic warfare systems, and secure satellite communication modems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1441KV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and aerospace applications, with emphasis on signal integrity, radiation tolerance, and long-term supply assurance.

The CY7C1441KV33 belongs to Cypress's military-temperature synchronous SRAM product line, engineered specifically for deterministic, low-latency cache and buffer roles in mission-critical embedded systems where timing predictability and environmental resilience are non-negotiable.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst addressing order: HIGH enables interleaved burst (compatible with Intel Pentium processors), LOW enables linear burst. It is a static strap pin with internal pull-up; must be hard-wired to VDD or GND before device operation and held stable during all accesses. Floating is allowed only for default interleaved mode due to internal pull-up.

Does CY7C1441KV33 support true dual-port operation?

No. The CY7C1441KV33 is a synchronous common-I/O SRAM with single-port architecture. It supports concurrent read/write only through pipelined burst cycles-not simultaneous independent access on separate ports. True dual-port functionality requires dedicated dual-port SRAM devices such as the CY7C1355BV33 series.

Can the ZZ (sleep) pin be driven dynamically during normal operation?

Yes-the ZZ pin is asynchronous and active-HIGH. Asserting ZZ HIGH places the device in non-time-critical sleep mode with full data retention and reduced current draw (<50 µA typical). It may be toggled at any time, independent of CLK or other control signals, and does not require synchronization or setup/hold timing.

How does the CY7C1441KV33 handle byte write masking during burst writes?

Byte write masking is controlled by BWA–BWD (active-low) and BWE (active-low). All four BWx signals must be sampled with BWE = LOW on the same CLK edge to enable selective byte writes. During burst writes, the same BWx/BWE combination applies to all burst words unless reasserted per cycle; no dynamic per-word mask update is supported within a single burst.