Infineon Technologies CY7C1441KV33-133BZXI

Overview

CY7C1441KV33-133BZXI from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous flow-through SRAM with on-chip ECC, designed for high-speed cache and buffer interfacing in microprocessor systems. It supports 133-MHz bus operation with 6.5 ns clock-to-output delay, offers 1M × 36 organization, operates from a 3.3 V core supply with 2.5 V/3.3 V I/O compatibility, and implements IEEE 1149.1 JTAG boundary scan.

For engineers reviewing the CY7C1441KV33-133BZXI datasheet, CY7C1441KV33-133BZXI pinout, CY7C1441KV33-133BZXI application, or CY7C1441KV33-133BZXI equivalent, key selection criteria include burst mode flexibility (interleaved/linear), synchronous self-timed write timing, dual-voltage I/O support, and integrated ECC for soft error mitigation in mission-critical embedded memory paths.

Technical Context

This SRAM implements a synchronous, flow-through architecture with separate processor (ADSP) and controller (ADSC) address strobes, enabling seamless integration with Pentium-class CPUs and cache controllers. Its 2-bit internal burst counter increments addresses automatically upon ADV assertion, supporting both Intel-style interleaved and linear burst sequences selected via the MODE pin.

All synchronous inputs-including address, data, CE1/CE2/CE3, BWx, BWE, GW, ADSP, ADSC, ADV, and CLK-are registered on the rising edge of CLK; only OE and ZZ are asynchronous. The device features byte-write capability via four active-low BWx signals plus BWE, and global write control via GW-enabling precise memory access granularity without external logic.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (JEDEC standard, Pb-free, body size 14 mm × 20 mm, 0.5 mm pitch). Pinout validated per Figure 1 (Rev. *J, p.5) of datasheet 001-66677.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with AS7C361024B-133BIN and IS61WV102436B-133TQLI, CY7C1441KV33-133BZXI uniquely combines ECC, MODE-selectable burst sequencing, and 100-pin TQFP packaging with JTAG - making it the sole option meeting simultaneous requirements for reliability, compatibility, and testability in certified embedded systems.

Availability

CY7C1441KV33-133BZXI is available at Aetrix Electronics and suitable for high-reliability CPU cache subsystems, industrial real-time controllers, avionics data acquisition units, and medical imaging frame stores requiring stable component supply across extended product lifecycles.

Supply support for CY7C1441KV33-133BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing automotive-grade reliability, industrial longevity, and functional safety compliance.

CY7C1441KV33-133BZXI belongs to the Cypress Flow-Through SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in microprocessor-based systems where timing predictability and data integrity are non-negotiable.

FAQ

What is the function of the MODE pin on CY7C1441KV33-133BZXI?

The MODE pin selects burst address sequencing: HIGH configures interleaved addressing (compatible with Intel Pentium processors), while LOW enables linear addressing. This pin is sampled synchronously on the rising edge of CLK during burst initiation and determines how the internal 2-bit counter increments subsequent addresses within a burst cycle.

Does CY7C1441KV33-133BZXI support both 2.5 V and 3.3 V I/O simultaneously?

No - VDDQ must be externally set to either 2.5 V or 3.3 V, not both. The device supports either voltage level on its I/O rails, but the selected VDDQ voltage applies uniformly to all DQ and DQP pins. Mixing voltages on the same device is not permitted and violates absolute maximum ratings.

How does the ZZ pin affect power consumption and data retention?

When ZZ is driven HIGH, the device enters a non-time-critical sleep mode with significantly reduced ICC (core current), while preserving all stored data. Data retention is guaranteed across the full industrial temperature range (–40 °C to +85 °C) with VDD ≥ 2.7 V. ZZ has an internal pull-down, so floating defaults to active-low normal operation.

Is JTAG boundary scan enabled by default on CY7C1441KV33-133BZXI?

Yes - IEEE 1149.1 JTAG is fully implemented and enabled by default. No external configuration is required to access TAP signals (TCK, TMS, TDI, TDO). The boundary scan chain is operational whenever VDD and VDDQ are powered, supporting interconnect testing and in-system programming without requiring special initialization sequences.