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Infineon Technologies CY7C1444KV33-250AXC

Part No.:
CY7C1444KV33-250AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1444KV33-250AXC.pdf
Description:
IC SRAM 36MBIT PAR 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,460

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Product details

Overview

CY7C1444KV33-250AXC from Cypress Semiconductor is a 36-Mbit (1M × 36) pipelined synchronous SRAM with registered inputs/outputs, 250 MHz bus operation support, 2.5 ns clock-to-output delay, and dual-voltage I/O (2.5 V or 3.3 V). It serves as high-speed secondary cache in Pentium-class processor systems requiring interleaved burst access and depth expansion without wait states.

For engineers reviewing the CY7C1444KV33-250AXC datasheet, CY7C1444KV33-250AXC pinout, CY7C1444KV33-250AXC application, or CY7C1444KV33-250AXC equivalent, key selection considerations include synchronous burst timing control (ADSP/ADSC/ADV), byte-write granularity (BWA–BWD + BWE), pipelined deselect behavior, and JEDEC-compliant 100-pin TQFP packaging with VDDQ/VSSQ separation.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter, user-selectable linear or interleaved burst sequences via MODE pin, and dual address strobe logic (ADSP for processor-initiated, ADSC for controller-initiated accesses). All synchronous inputs-including addresses, CE1/CE2/CE3, BWE/BWX, GW, and ADV-are registered on the rising edge of CLK.

It supports synchronous self-timed writes with optional global write (GW) override, asynchronous OE for output tristate control, and ZZ sleep mode with data retention. Core operates at 3.3 V while I/Os support either 2.5 V or 3.3 V, meeting JESD8-5 compatibility requirements for mixed-voltage system interfacing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 36 Mbit (1M × 36 configuration)
Max clock frequency 250 MHz - enables 4 ns cycle time for sustained burst throughput
Access time (tCO) 2.5 ns - guarantees data valid at output register on next clock edge
Core supply voltage 3.3 V ± 0.3 V - defines internal logic and array operating range
I/O supply voltage 2.5 V or 3.3 V - allows direct interface to both LVTTL and SSTL-2 systems
Burst capability Interleaved or linear 4-word burst - matches Pentium and controller-based memory protocols
Byte write control Four independent byte lanes (BWA–BWD) with BWE qualification - enables partial-word updates without read-modify-write

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 14 mm × 14 mm body, 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference for all registered inputs and output registers
ADSP / ADSC Address strobe inputs Asynchronous initiation signals for processor- or controller-driven address capture; sampled synchronously on CLK rise
ADV Burst advance control Active-low signal that increments internal 2-bit burst counter on CLK rise during burst sequence
BWA–BWD, BWE, GW Write control inputs Enable selective byte writes (BWA–BWD + BWE) or full-word writes (GW low); all sampled synchronously
OE Asynchronous output enable Active-low tristate control for DQ/DQP I/O pins; overrides synchronous output register during assertion
ZZ Asynchronous sleep control Active-high entry into low-power sleep mode with data retention; internal pull-down ensures safe default LOW state
DQA–DQD, DQPA–DQPD Bidirectional data I/O 36-bit data bus (4 × 9-bit byte lanes); direction controlled by OE; driven by synchronous output registers
VDD / VSS Core power / ground 3.3 V core supply domain; separate from I/O domain to minimize noise coupling
VDDQ / VSSQ I/O power / ground Independent 2.5 V or 3.3 V I/O supply domain supporting mixed-voltage interface compliance

Key Features

Feature Design Value
Pipelined deselect Output buffers remain active for one additional clock cycle after deselect, enabling seamless depth expansion without wait states
User-selectable burst mode MODE pin selects interleaved (Pentium-compatible) or linear burst order, eliminating external address sequencing logic
Synchronous self-timed writes On-chip write timing control eliminates need for external write pulse generation or timing margining
Separate VDDQ/VSSQ rails Isolates I/O switching noise from core logic, improving signal integrity in high-speed parallel bus environments
Double-cycle deselect Guarantees deterministic tristate transition after chip disable-critical for multi-SRAM bank arbitration

Applications

Processor Cache Interface Network Packet Buffer

Use Scenario: High-bandwidth L2 cache between Pentium-class CPU and memory controller in embedded computing platforms.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing 250 MHz burst reads/writes with interleaved addressing and zero-wait-state depth expansion.

Use Value: Eliminates external burst address generation logic and supports deterministic 2.5 ns output timing for tight CPU–cache timing closure.

Use Scenario: Temporary storage for variable-length Ethernet frames in Layer 2 switch ASICs requiring fast ingress/egress buffering.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as FIFO buffer with synchronous write (ADSP) and asynchronous read enable (OE) for flexible flow control.

Use Value: Byte-write select (BWA–BWD) enables efficient partial-frame updates without full-word overwrites, reducing bus traffic.

Industrial Motion Controller Memory Test Equipment Pattern Memory

Use Scenario: Real-time trajectory buffer in servo drive controllers where deterministic access latency and data retention during idle cycles are critical.

IC Role / Device Role / Timing Role: Low-latency SRAM with ZZ sleep mode preserving position data during motion pauses while minimizing power draw.

Use Value: Asynchronous ZZ control allows immediate entry into low-power state without clock gating or software overhead.

Use Scenario: Vector pattern storage in automated test equipment (ATE) systems requiring rapid, repeatable stimulus delivery at 250 MHz.

IC Role / Device Role / Timing Role: High-reliability synchronous SRAM with JESD8-5 I/O compliance ensuring signal integrity across long PCB traces in modular test racks.

Use Value: Separate VDDQ/VSSQ rails suppress I/O noise coupling into analog measurement circuitry co-located on same board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102436BLL-250BLI 250 MHz, 36-Mbit (1M × 36), but uses single 3.3 V I/O supply (no 2.5 V option) and lacks ZZ sleep mode Requires external level-shifting for 2.5 V systems; no low-power idle state for motion control use cases Select when cost sensitivity outweighs mixed-voltage flexibility and sleep functionality
MT28EW128Axx-250WLC 128-Mbit quad SPI Flash with SRAM-like interface; not pin-compatible, asynchronous command set, no true synchronous burst Used for nonvolatile pattern storage-not suitable for real-time cache or FIFO where deterministic 2.5 ns tCO is required Select only for code/data storage where volatility tolerance and latency >100 ns are acceptable

Compared with IS61WV102436BLL-250BLI and MT28EW128Axx-250WLC, the CY7C1444KV33-250AXC uniquely delivers guaranteed 2.5 ns tCO, dual-voltage I/O, and hardware-managed sleep-enabling tighter timing margins, broader system voltage compatibility, and lower idle power in real-time embedded caches.

Availability

CY7C1444KV33-250AXC is available at Aetrix Electronics and suitable for processor cache interfaces, network packet buffering, industrial motion controllers, and ATE pattern memory applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1444KV33-250AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing reliability, timing precision, and mixed-signal integration.

The CY7C1444KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented cache and buffer applications in computing, networking, and industrial control systems.

FAQ

What is the function of the MODE pin on CY7C1444KV33-250AXC?

The MODE pin selects burst address sequence behavior: logic HIGH configures interleaved burst order (compatible with Intel Pentium processors), while logic LOW selects linear burst order. It is sampled asynchronously at power-up and latched internally, determining how the two-bit burst counter increments addresses during ADV-driven bursts.

Can CY7C1444KV33-250AXC operate with 2.5 V I/O while maintaining 3.3 V core supply?

Yes. The device supports independent VDDQ (2.5 V or 3.3 V) and VDD (3.3 V) supplies. When VDDQ = 2.5 V, all I/O pins-including DQ/DQP, OE, and byte-write controls-meet JESD8-5 specifications for 2.5 V LVTTL interfaces, while the core remains powered at 3.3 V for optimal array performance and stability.

How does the pipelined enable register improve depth expansion?

The pipelined enable register delays output buffer tristate by one clock cycle after chip deselect (CE1/CE2/CE3 deactivation). This ensures that the final valid data word remains driven onto the bus during the first cycle of the next device's access-eliminating inter-bank wait states and enabling seamless 1M × 36 → 2M × 36 expansion using multiple devices.

Is ZZ pin required to be actively driven, or can it be left floating?

The ZZ pin has an internal pull-down resistor, so it may be left unconnected for normal operation (default LOW). However, for explicit sleep control, it must be driven HIGH with a clean, slow-rising signal (tR ≤ 10 ns) to enter sleep mode; floating is acceptable only if sleep functionality is unused and noise immunity is assured by board layout.

CY7C1444KV33-250AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
2.6 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1444KV33-250AXC FAQ

1.How can I place an order for CY7C1444KV33-250AXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1444KV33-250AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1444KV33-250AXC reliable?

The price and inventory of CY7C1444KV33-250AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1444KV33-250AXC is usually 5 days.

3.What payment methods are accepted for CY7C1444KV33-250AXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1444KV33-250AXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1444KV33-250AXC?

CY7C1444KV33-250AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1444KV33-250AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1444KV33-250AXC?

For technical support, including CY7C1444KV33-250AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1444KV33-250AXC requirements.

6.How does Aetrix verify that CY7C1444KV33-250AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1444KV33-250AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1444KV33-250AXC meets industry standards.

7.What is the process for return or replacement of CY7C1444KV33-250AXC?

All CY7C1444KV33-250AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1444KV33-250AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1444KV33-250AXC part is unused and in its original packaging.

Return procedure for CY7C1444KV33-250AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1444KV33-250AXC Tags

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