Infineon Technologies CY7C1460AV25-167BZXI

Overview

CY7C1460AV25-167BZXI from Cypress Semiconductor is a 36-Mbit synchronous pipelined SRAM (1M × 36 configuration) implementing No Bus Latency™ (NoBL™) architecture, designed for high-throughput memory subsystems in networking and telecom data-path applications. It operates at 167 MHz with 3.4 ns clock-to-output delay, 2.5 V core supply, 2.5 V/1.8 V I/O supply, and supports zero-wait-state back-to-back read/write operations.

For engineers reviewing the CY7C1460AV25-167BZXI datasheet, CY7C1460AV25-167BZXI pinout, CY7C1460AV25-167BZXI application, or CY7C1460AV25-167BZXI equivalent, key selection criteria include burst order control (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write timing, and JEDEC-standard 100-pin TQFP packaging with JTAG boundary-scan support.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are registered to that same edge. The internal NoBL logic eliminates bus latency by enabling consecutive read/write cycles without wait states, using synchronous self-timed write circuitry and three-level chip enable decoding (CE1 active-low, CE2 active-high, CE3 active-low).

Burst capability is configurable via the MODE strap pin (interleaved or linear), and low-power operation is supported through asynchronous ZZ sleep mode and CEN-controlled clock gating. Output drivers are synchronously three-stated during write data phases to prevent bus contention, and IEEE 1149.1 JTAG boundary scan is integrated for system-level testability.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), lead-free compliant, body size 14 mm × 14 mm, pitch 0.5 mm, 1.4 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1460AV25-250BZXI, the -167BZXI trades 83 MHz bandwidth for lower dynamic power (335 mA vs. 435 mA) and relaxed timing closure. Against IDT72V2115L10PF, it delivers true zero-wait-state pipelining but requires redesign for NoBL-specific control sequencing and burst behavior.

Availability

CY7C1460AV25-167BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1460AV25-167BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

CY7C1460AV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace asynchronous and ZBT SRAMs in bandwidth-constrained, low-latency data-path applications where deterministic pipelined access is critical.

FAQ

What is the function of the MODE pin on CY7C1460AV25-167BZXI?

The MODE pin is a static strap input that configures burst order: tied HIGH for interleaved burst (e.g., 0,2,4,6,1,3,5,7), pulled LOW for linear burst (e.g., 0,1,2,3,4,5,6,7). It must be set before initialization and remain stable during operation; floating defaults to HIGH (interleaved). This setting directly affects address sequencing during burst reads/writes and must match the host controller's expectation.

How does the ZZ pin interact with CEN and power states?

ZZ is an asynchronous active-high sleep input that places the device in a non-time-critical low-power state with data retention; it overrides CEN and halts all internal clocks. When ZZ is HIGH, core and I/O supplies remain active but dynamic current drops significantly (<120 mA). CEN remains functional upon exit from ZZ sleep, allowing immediate resumption of clocked operation without reset. ZZ has an internal pull-down, so leaving it unconnected defaults to active LOW (normal operation).

Can CY7C1460AV25-167BZXI operate with 1.8 V I/O supply while maintaining 2.5 V core?

Yes-the device supports independent VDDQ (1.8 V or 2.5 V) and VDD (2.5 V ± 0.2 V) supplies. When VDDQ = 1.8 V, all DQ/DQP I/O levels conform to 1.8 V LVTTL/LVCMOS specifications, while internal logic and memory array continue operating at 2.5 V. This allows seamless interfacing with 1.8 V FPGAs or ASICs without level shifters, provided VDDQ and VDD are powered in correct sequence per datasheet recommendations.

What happens to outputs during a write cycle when OE is asserted LOW?

During the data portion of a write cycle, outputs are synchronously three-stated regardless of OE state-this is enforced by internal control logic to prevent bus contention. OE only governs output enable during read cycles and idle states. After the write data phase completes, outputs return to tri-state unless a read is initiated in the next cycle. This behavior is inherent to the NoBL architecture and requires no external OE timing coordination.