Infineon Technologies CY7C1460AV25-200BZXI

Overview

CY7C1460AV25-200BZXI from Cypress Semiconductor is a 36-Mbit synchronous pipelined SRAM with NoBL™ architecture, configured as 1M × 36, operating at 200 MHz with 3.2 ns clock-to-output delay, 2.5V core supply, and 2.5V/1.8V I/O supply. It delivers zero-wait-state back-to-back read/write capability in high-throughput networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the CY7C1460AV25-200BZXI datasheet, CY7C1460AV25-200BZXI pinout, CY7C1460AV25-200BZXI application, or CY7C1460AV25-200BZXI equivalent, key selection criteria include burst order control (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write timing, and JTAG boundary-scan support for system-level testability.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are driven from output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling consecutive read/write operations without wait states.

It supports linear or interleaved burst ordering via the MODE strap pin, uses three synchronous chip enables (CE1 active LOW, CE2 active HIGH, CE3 active LOW) for bank selection, and features asynchronous ZZ sleep mode and OE-controlled output tri-state-automatically enforced during write data cycles to prevent bus contention.

Key Specifications

Pinout & Package

The CY7C1460AV25-200BZXI is packaged in a lead-free 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch) per JEDEC MO-145, with thermal pad exposed on underside for enhanced heat dissipation in sustained burst operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V251L15PF and ISSI IS61WV102436B, the CY7C1460AV25-200BZXI uniquely combines 200 MHz operation, dual-VDDQ support, hardware-selectable burst order, and IEEE 1149.1 JTAG - making it the only option for high-speed, testable, voltage-flexible SRAM subsystems.

Availability

CY7C1460AV25-200BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, high-end network switching, baseband processing, and automated test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1460AV25-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1460AV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in packet-processing and real-time signal-path applications.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin is a static strap input that selects burst order: tied HIGH enables interleaved burst addressing (e.g., 0, 2, 4, 6…), while pulled LOW enables linear burst (e.g., 0, 1, 2, 3…). It must remain stable before and during operation; floating defaults to HIGH. This setting directly determines how ADV/LD increments the internal address counter during burst sequences - matching specific DMA or processor burst expectations.

Can CY7C1460AV25-200BZXI operate with VDDQ = 1.8V while VDD = 2.5V?

Yes - the device supports independent 2.5V core (VDD) and 1.8V I/O (VDDQ) supplies. This allows direct interfacing with 1.8V FPGA I/O banks without level shifters, while maintaining 2.5V internal logic integrity. The datasheet specifies VDDQ tolerance of 1.7V to 2.7V, and operation at 1.8V is validated across all speed grades including 200 MHz.

How does the ZZ sleep mode interact with data retention and wake-up timing?

Asserting ZZ HIGH places the device in a non-time-critical sleep state where core power is reduced but data is retained indefinitely. Wake-up occurs on the next valid CLK edge after ZZ returns LOW, with no additional stabilization delay required. Unlike deep power-down modes, ZZ does not require reinitialization - the device resumes normal operation immediately upon clock resumption.

Is the CY7C1460AV25-200BZXI pin-compatible with ZBT SRAMs?

Yes - it is pin-compatible and functionally equivalent to standard ZBT SRAMs (e.g., IDT ZBT series), sharing identical pinout, timing model, and control protocol. This enables drop-in replacement in existing ZBT-based designs while delivering improved features including NoBL™ latency elimination, dual-VDDQ support, and integrated JTAG test capability.