Infineon Technologies CY7C1460AV33-167BZC
- Part No.:
- CY7C1460AV33-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1460AV33-167BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,665
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1460AV33-167BZC from Cypress Semiconductor is a 3.3V, 1M × 36 synchronous pipelined SRAM with NoBL™ architecture, supporting true back-to-back read/write operations at 167 MHz with zero wait states. It features fully registered I/O, byte write capability (BWa–BWd), synchronous self-timed writes, and 3.3V/2.5V I/O compatibility. Used in high-throughput packet buffering and network switch fabric control planes.
For engineers reviewing the CY7C1460AV33-167BZC datasheet, CY7C1460AV33-167BZC pinout, CY7C1460AV33-167BZC application, or CY7C1460AV33-167BZC equivalent, key selection criteria include clock-to-output timing (3.4 ns), burst mode support (linear/interleaved), JTAG boundary scan compliance, and 100-pin TQFP or 165-ball FBGA package options.
Technical Context
The device implements a fully synchronous interface with all inputs and outputs registered on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write transfers on every clock cycle without pipeline stalls.
Three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) provide flexible bank selection, while asynchronous OE controls output tristate independently of clock domain. Write operations use synchronous byte write selects (BWa–BWd) and WE, with on-chip self-timed write circuitry ensuring deterministic timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 167 MHz - supports sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for read cycles |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - enables mixed-voltage system interfacing |
| Power Consumption | 375 mA max operating current - determines thermal design margin at full speed |
| Burst Capability | Linear or interleaved burst order - reduces address overhead in sequential memory access |
| JTAG Support | IEEE 1149.1 compliant - enables boundary-scan testing in assembled PCBs |
Pinout & Package
Available in JEDEC-standard Pb-Free 100-pin TQFP (14 mm × 14 mm) and Pb-Free 165-ball FBGA (15 mm × 17 mm × 1.4 mm). The 100-pin TQFP variant is used for cost-sensitive, medium-density applications requiring standard surface-mount assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Synchronous Address Input | 20-bit address bus sampled on rising CLK edge; selects one of 1M locations |
| BWa–BWd | Synchronous Byte Write Select | Active-low signals controlling DQa/DQPa through DQd/DQPd; enable partial-word writes |
| CLK, CEN | Clock & Enable Control | Rising-edge-triggered clock qualified by CEN; CEN HIGH suspends operation without deselecting |
| CE1, CE2, CE3 | Chip Enable Logic | Three-input decode (CE1↓, CE2↑, CE3↓) allows multi-bank memory mapping |
| DQa–DQd, DQPa–DQPd | Bidirectional Data I/O | 36-bit data path with parity bits; direction controlled by OE and internal write/read state |
| OE | Asynchronous Output Enable | Active-low signal overriding synchronous logic to tristate outputs during write/data contention |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables unlimited back-to-back read/write cycles with zero wait states, increasing effective bandwidth by >30% vs. conventional SRAM |
| Byte Write Select (BWa–BWd) | Allows independent write enable per 9-bit byte group (DQa/DQPa through DQd/DQPd), eliminating read-modify-write overhead |
| Synchronous Self-Timed Writes | On-chip timing control ensures consistent write completion within fixed clock cycles, removing external write pulse width constraints |
| Interleaved/Linear Burst Mode | Reduces external address generation burden by auto-advancing internal counter via ADV/LD, supporting both burst types per MODE pin state |
| IEEE 1149.1 Boundary Scan | Full JTAG testability with TAP controller, instruction register, and boundary-scan chain for production ICT and debug |
Applications
| Network Packet Buffering | Telecom Line Card Control Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet switches before classification and forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as dual-port-accessible buffer memory synchronized to line-rate clocks. Use Value: 167 MHz zero-wait-state operation enables real-time header processing at wire speed without pipeline bubbles. | Use Scenario: Holding configuration tables and status registers for DSP-based channelized TDM interfaces in carrier-grade base station line cards. IC Role / Device Role / Timing Role: Synchronous burst-capable memory interfaced to TI C6000 DSP EMIF, providing deterministic access for time-critical control loops. Use Value: Linear burst mode reduces external address bus toggling by 75%, lowering EMI and power consumption in dense telecom modules. |
| Industrial PLC Real-Time Data Log | Avionics Display Frame Buffer |
Use Scenario: Capturing sensor timestamps and actuator commands in safety-critical programmable logic controllers with microsecond-level determinism. IC Role / Device Role / Timing Role: Deterministic-access SRAM serving as cyclic data ring buffer, clocked from FPGA fabric with precise phase alignment. Use Value: Fully registered I/O and CEN-controlled clock gating ensure jitter-free sampling across temperature range (−40°C to +85°C). | Use Scenario: Storing rendered graphics frames for cockpit multifunction displays requiring flicker-free updates under vibration and wide temperature swings. IC Role / Device Role / Timing Role: Parity-protected (DQPx) frame buffer memory interfaced to dedicated graphics controller ASIC via 36-bit bus. Use Value: Built-in ZZ sleep mode reduces standby current to <120 µA, extending battery life during display idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 1M × 36, 15 ns access, 133 MHz max - slower clock, higher latency, no JTAG | Lacks burst mode and boundary scan; suited for legacy systems with relaxed timing | Select when JTAG testability and sub-4 ns access are not required |
| ISSI IS61WV102436B | 1M × 36, 2.5V core, 166 MHz - lower voltage, no NoBL™, asynchronous OE only | Requires external write timing control; no self-timed writes or burst advance logic | Choose for 2.5V-only systems where deterministic write completion is managed externally |
Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1460AV33-167BZC delivers superior throughput via NoBL™ architecture and eliminates external timing constraints through synchronous self-timed writes and JTAG-debuggable interface.
Availability
CY7C1460AV33-167BZC is available at Aetrix Electronics and suitable for network switch fabric buffers, telecom line card control memory, and industrial PLC real-time data logging requiring stable component supply over extended product lifecycles.
Supply support for CY7C1460AV33-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, industrial, and automotive applications.
CY7C1460AV33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth data buffering in packet-switched infrastructure and real-time control systems.
FAQ
What is the function of the MODE pin on CY7C1460AV33-167BZC?
The MODE pin selects burst addressing order: tied to GND enables linear burst, while floating or connected to VDD enables interleaved burst. This setting determines how the internal address counter increments during burst reads/writes and must be configured at power-up before first access.
Does CY7C1460AV33-167BZC support 2.5V-only I/O operation?
Yes - VDDQ accepts 2.5V ±0.2V while VDD remains at 3.3V ±0.3V, allowing direct interfacing with 2.5V logic families without level shifters. DC characteristics including setup/hold times and output drive strength are guaranteed across this I/O voltage range per datasheet Table "DC Electrical Characteristics".
How does the ZZ (Sleep) mode reduce power consumption?
Asserting ZZ LOW places the device in ultra-low-power sleep mode, reducing CMOS standby current to ≤120 µA. During ZZ mode, all internal clocks and output drivers are disabled, but data retention is maintained as long as VDD and VDDQ remain within specification. Exit time is one clock cycle after ZZ deassertion.
Can CE2 be used as an active-low signal instead of active-high?
No - CE2 is strictly defined as active-high per datasheet Pin Definitions and Truth Table. Using it as active-low violates timing and functional specifications, potentially causing undefined chip select behavior. CE1 and CE3 are active-low; CE2 must remain high to enable the device when CE1 and CE3 are asserted.
CY7C1460AV33-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1460AV33-167BZC FAQ
1.How can I place an order for CY7C1460AV33-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1460AV33-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1460AV33-167BZC reliable?
The price and inventory of CY7C1460AV33-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1460AV33-167BZC is usually 5 days.
3.What payment methods are accepted for CY7C1460AV33-167BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1460AV33-167BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1460AV33-167BZC?
CY7C1460AV33-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1460AV33-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1460AV33-167BZC?
For technical support, including CY7C1460AV33-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1460AV33-167BZC requirements.
6.How does Aetrix verify that CY7C1460AV33-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1460AV33-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1460AV33-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1460AV33-167BZC?
All CY7C1460AV33-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1460AV33-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1460AV33-167BZC part is unused and in its original packaging.
Return procedure for CY7C1460AV33-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1460AV33-167BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

