Infineon Technologies CY7C1460AV33-250AXI

Overview

CY7C1460AV33 from Cypress Semiconductor is a 3.3V, 1M × 36 (36 Mbit) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations at 250 MHz. It features fully registered inputs/outputs, byte-write capability via BWa–BWd, 2.6 ns clock-to-output delay, and supports 3.3V core / 3.3V or 2.5V I/O supply rails. Used in network packet buffers, FPGA co-processor caches, and telecom line-card data path memory.

For engineers reviewing the CY7C1460AV33 datasheet, CY7C1460AV33 pinout, CY7C1460AV33 application, or CY7C1460AV33 equivalent, key selection criteria include burst mode support (linear/interleaved), synchronous self-timed write timing, JTAG boundary scan compliance, and compatibility with ZBT-style bus protocols in high-speed memory interfaces.

Technical Context

The CY7C1460AV33 implements a fully synchronous, pipelined memory architecture where all address, control, and data signals are registered on the rising edge of CLK, qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states, achieving sustained 250 MHz throughput.

It integrates three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) for flexible bank decoding, asynchronous OE for output tristate control, and dedicated byte write selects (BWa–BWd) that gate writes to four 9-bit data groups. Output drivers are synchronously disabled during write data phases to prevent bus contention.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-Free 100-pin TQFP (14 × 14 mm) and 165-ball FBGA (15 × 17 mm, 1.4 mm height). Pin functions are synchronized to CLK rising edge except OE (asynchronous) and ZZ (sleep mode control).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, the CY7C1460AV33 delivers higher bandwidth (250 MHz vs ≤167 MHz), lower latency (2.6 ns), integrated JTAG, and flexible burst/addressing modes - making it optimal for next-generation networking and real-time embedded memory subsystems.

Availability

CY7C1460AV33 is available at Aetrix Electronics and suitable for network packet buffers, FPGA co-processor caches, and telecom line card memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1460AV33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.

The CY7C1460AV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in networking infrastructure, baseband processing, and real-time embedded systems demanding deterministic timing.

FAQ

What is the function of the MODE pin on CY7C1460AV33?

The MODE pin selects burst addressing order: tied to VDD for interleaved burst (used in cache-line fills), or grounded for linear burst (suitable for sequential DMA transfers). It is sampled at power-up and latched; changing it mid-operation has no effect. This pin is not present on the CY7C1460AV33 variant - it appears only on CY7C1462AV33 and CY7C1464AV33 per datasheet Figure 2 and Pin Definitions table.

Can CY7C1460AV33 operate with 2.5V I/O while maintaining 3.3V core supply?

Yes. VDDQ (I/O supply) accepts 2.3–3.6 V, independent of VDD (core supply, 3.135–3.6 V). This allows direct interfacing with 2.5V FPGA I/O banks or ASICs while preserving full 250 MHz performance and 2.6 ns access time - confirmed in DC Electrical Characteristics Table on page 19 of Rev. *F datasheet.

How does the ZZ (Sleep) mode affect data retention and wake-up time?

In ZZ mode (pin driven LOW), the device enters deep sleep with typical standby current <120 µA while retaining all stored data. Wake-up is synchronous: exit occurs on the first valid CLK rising edge after ZZ returns HIGH, with no additional latency beyond one clock cycle - verified in Sleep Mode section (page 9) and AC Switching Characteristics (page 21).

Is CY7C1460AV33 pin-compatible with standard ZBT SRAMs like IDT72V2115?

Yes - the CY7C1460AV33 is explicitly stated as "pin compatible and functionally equivalent to ZBT" devices in its datasheet Features section. It matches ZBT pinouts for 100-pin TQFP and 165-ball FBGA packages, including identical signal names, placement, and timing behavior for CE, WE, OE, CLK, and DQ pins.