Infineon Technologies CY7C1460BV25-250BZXC

Overview

CY7C1460BV25-250BZXC from Cypress Semiconductor is a 36-Mbit (1 M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write operations at 250 MHz. It features 2.5 V core/I/O supplies, 2.6 ns clock-to-output delay, byte-write capability via four BW inputs, and IEEE 1149.1 JTAG boundary scan support in a 165-ball FBGA package.

For engineers reviewing the CY7C1460BV25-250BZXC datasheet, CY7C1460BV25-250BZXC pinout, CY7C1460BV25-250BZXC application, or CY7C1460BV25-250BZXC equivalent, key selection criteria include burst order configuration (linear/interleaved), synchronous self-timed write timing, CEN-controlled clock gating, and compatibility with ZBT™-based system designs.

Technical Context

This SRAM implements fully registered synchronous operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same edge. The NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without pipeline stalls.

Burst addressing is controlled by ADV/LD and MODE pins-supporting both linear and interleaved orders-and write operations use on-chip self-timed circuitry with byte-select granularity (BWa–BWd). Three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) provide flexible bank selection, while asynchronous OE manages output tri-state during writes and deselects.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L15PF and IS61WV102436B, CY7C1460BV25-250BZXC delivers 50% higher bandwidth, integrated power management (ZZ/CEN), and configurable burst behavior-critical for modern packet-processing and real-time control pipelines.

Availability

CY7C1460BV25-250BZXC is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, real-time video processing, and industrial motion controller cache applications requiring stable component supply and long-term manufacturability.

Supply support for CY7C1460BV25-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC mixed-signal arrays, and USB/USB-C solutions for industrial, automotive, and communications markets.

CY7C1460BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for eliminating bus latency in high-clock-rate memory subsystems used in networking, telecom, and real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1460BV25-250BZXC?

The MODE pin is a strap input that configures burst addressing order: pulled HIGH (or left floating) selects interleaved burst mode, while pulled LOW selects linear burst mode. It must remain static during operation and is sampled at power-up or reset. This setting directly determines how consecutive addresses increment during burst reads/writes, aligning with processor or ASIC burst expectations.

How does the ZZ pin differ from CEN in power management?

ZZ (deep sleep) disables internal circuitry including clocks, memory array, and I/O buffers, reducing current to ≤100 µA while retaining data. CEN (clock enable) only gates the CLK input-preserving register states and allowing immediate resumption-but draws ~120 mA standby current. ZZ is used for extended idle periods; CEN is for cycle-accurate clock suspension during brief pauses.

Can CY7C1460BV25-250BZXC operate with mixed voltage supplies (e.g., 2.5 V core + 3.3 V I/O)?

No. The device requires strictly 2.5 V ±0.2 V for both VDD (core) and VDDQ (I/O) supplies. Applying 3.3 V to VDDQ exceeds absolute maximum ratings and risks permanent damage. Interface to 3.3 V systems requires level-shifting on all I/O lines, or use of a compatible 3.3 V SRAM such as the IS61WV102436B (with associated performance trade-offs).

Is the CY7C1460BV25-250BZXC pin-compatible with ZBT™ SRAMs?

Yes-Cypress explicitly states pin compatibility and functional equivalence with industry-standard ZBT™ SRAMs (e.g., IDT 72V2115 series). This includes identical pin functions, timing behavior, and package footprints (165-ball FBGA), enabling drop-in replacement in existing ZBT-based designs without layout changes or firmware updates.