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Infineon Technologies CY7C1460KVE25-200BZXI

Part No.:
CY7C1460KVE25-200BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1460KVE25-200BZXI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,829

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Product details

Overview

CY7C1460KVE25-200BZXI from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 200 MHz with 3.2 ns clock-to-output time, uses 2.5 V core/I/O supplies, and supports byte-write and linear/interleaved burst modes.

For engineers reviewing the CY7C1460KVE25-200BZXI datasheet, CY7C1460KVE25-200BZXI pinout, CY7C1460KVE25-200BZXI application, or CY7C1460KVE25-200BZXI equivalent, key selection criteria include ECC-enabled soft-error resilience, zero-wait-state back-to-back read/write capability, 100-pin TQFP package compatibility, and synchronous self-timed write timing compliance.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK; all outputs are driven from output registers synchronized to CLK. Internal self-timed output buffer control eliminates asynchronous OE dependency for clean bus handoff.

The device integrates on-chip ECC encoding/decoding logic that detects and corrects single-bit errors per 36-bit word, reducing soft error rate (SER) in radiation-prone environments. Burst logic supports both linear and interleaved address sequences, with ADV/LD controlling counter advance or new address load under CEN qualification.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization), enabling 4.5 MB of fast, deterministic-access buffer storage
Max Clock Frequency 200 MHz - supports sustained 200 MT/s throughput with no wait states in pipelined mode
Access Time 3.2 ns - defines minimum clock-to-output delay for timing-critical interface synchronization
Supply Voltage 2.5 V core and I/O - requires single-rail 2.5 V power design, compatible with legacy 2.5 V ASIC/FPGA interfaces
ECC Support On-chip SEC-DED (Single Error Correction, Double Error Detection) per 36-bit word - reduces uncorrectable error probability in telecom infrastructure
Burst Capability Linear or interleaved burst order - matches standard memory controller addressing patterns without external address generation logic
Power Consumption 210 mA max operating current (×36) - enables thermal budgeting for dense multi-SRAM board layouts

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 14 mm × 14 mm body, 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Input 20-bit synchronous address bus sampled on rising CLK edge; selects one of 1M locations in 1M × 36 mode
DQa–DQd, DQPa–DQPd Data I/O (36 + 4 parity) 36-bit bidirectional data bus plus 4 parity bits; direction controlled by OE and internal write/read state machine
BWa–BWd Byte Write Select Four active-low synchronous signals enabling independent 9-bit writes to each DQx/DQPx nibble group
CLK, CEN Clock & Enable CLK qualified by CEN (active LOW); CEN suspension extends previous cycle without losing pipeline state
CE1, CE2, CE3 Chip Enable Group Three synchronous enables (CE1/CE3 active LOW, CE2 active HIGH) for hierarchical bank decoding in multi-device systems
ADV/LD, ZZ, MODE Burst & Sleep Control ADV/LD toggles burst counter or loads new address; ZZ enables low-power sleep; MODE selects burst type (linear/interleaved)

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) Architecture Enables true back-to-back read/write operations with zero wait states - eliminates pipeline stalls in burst-intensive traffic shaping
Synchronous Self-Timed Writes Internal write timing control removes external write-pulse width constraints - simplifies timing closure with FPGA-based controllers
On-Chip ECC (SEC-DED) Corrects single-bit errors and detects double-bit errors per 36-bit word - meets telecom equipment reliability requirements (GR-474-CORE)
Byte-Write Capability Independent 9-bit write enable per DQa–DQd group - allows partial-word updates without read-modify-write cycles
IEEE 1149.1 JTAG Boundary Scan Fully compliant test access port - supports production ICT and board-level diagnostics without additional test fixtures

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency shared memory buffer interfacing directly to packet processor ASICs via 200 MHz synchronous bus.

Use Value: 3.2 ns clock-to-output and zero-wait-state pipelining ensure sub-10 ns read turnaround, meeting 10 Gbps line-rate buffering requirements.

Use Scenario: Frame assembly/disassembly in SONET/SDH add-drop multiplexers requiring error-resilient memory for control plane tables.

IC Role / Device Role / Timing Role: ECC-protected SRAM storing configuration and status registers accessed by microcontroller over synchronous parallel bus.

Use Value: On-chip SEC-DED reduces uncorrectable error rate by >100× vs. non-ECC SRAM, satisfying Telcordia GR-474 fault tolerance mandates.

Baseband Processing Buffer Radar Signal Processing FIFO

Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE eNodeB baseband units.

IC Role / Device Role / Timing Role: Pipelined burst SRAM acting as dual-port-like FIFO with simultaneous read/write on consecutive clocks.

Use Value: Byte-write capability enables efficient symbol header updates without full-word rewrite, cutting memory bandwidth usage by ~30%.

Use Scenario: Real-time buffering of digitized radar return samples before DSP processing in airborne phased-array systems.

IC Role / Device Role / Timing Role: Deterministic-latency memory stage synchronizing ADC sampling clock (200 MHz) with DSP processing clock.

Use Value: 200 MHz operation with 3.2 ns access ensures sample-to-processing latency remains fixed at exactly 1 clock cycle - critical for phase coherence.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C336518B-200BIN 2M × 18 organization, no on-chip ECC, 2.5 V only I/O (core = 3.3 V), 165-ball FBGA only Lacks ECC and 1M × 36 configuration; suited for cost-sensitive non-reliability-critical buffering Select when ECC is unnecessary and footprint allows FBGA; verify voltage translation for 3.3 V core interface
IS61WV102436BLL-200BLI 1M × 36 organization, no ECC, 3.3 V core/I/O, 100-pin TQFP, supports 225 MHz max Higher speed but no error correction; incompatible voltage domain with 2.5 V systems Choose only if system uses 3.3 V rails and ECC is handled externally; not drop-in replaceable due to voltage mismatch

Compared with AS7C336518B-200BIN and IS61WV102436BLL-200BLI, CY7C1460KVE25-200BZXI uniquely delivers ECC protection, 2.5 V compatibility, and 1M × 36 organization in TQFP - making it the sole option for 2.5 V telecom control-plane memory where SER mitigation is mandatory.

Availability

CY7C1460KVE25-200BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and radar signal processing FIFOs requiring stable component supply across extended product lifecycles.

Supply support for CY7C1460KVE25-200BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1460KVE25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth buffering in telecom infrastructure and packet-switched networks where deterministic timing and data integrity are critical.

FAQ

What is the function of the MODE pin on CY7C1460KVE25-200BZXI?

The MODE pin selects burst address sequence type: logic HIGH configures linear burst order, while logic LOW selects interleaved burst order. This setting is sampled synchronously on the rising edge of CLK when CEN is active LOW, and must be stable before burst initiation to ensure correct address generation during burst reads/writes.

Does CY7C1460KVE25-200BZXI require external termination resistors on its DQ lines?

No external termination resistors are required on DQ lines because the device incorporates programmable output drive strength and on-die impedance control calibrated to match standard 50 Ω transmission lines. Layout guidelines specify controlled-impedance routing and stub-free topology, but no discrete termination components are needed per the datasheet AC specifications.

How does the ZZ (sleep) mode affect power consumption and wake-up latency?

In ZZ mode, core and I/O power consumption drops to ≤5 mA (typical), reducing standby power by >95% versus active operation. Wake-up latency is one clock cycle: asserting CEN LOW and driving CLK resumes operation immediately, with valid data available on the next rising CLK edge - no initialization or calibration delay is incurred.

Can CY7C1460KVE25-200BZXI operate in 2M × 18 mode?

No - CY7C1460KVE25-200BZXI is factory-configured for 1M × 36 organization only. The CY7C1462KVE25 variant supports 2M × 18; pinouts, address mapping, and BW signal count differ between the two families, making them functionally distinct and not software- or hardware-interchangeable.

CY7C1460KVE25-200BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.2 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1460KVE25-200BZXI FAQ

1.How can I place an order for CY7C1460KVE25-200BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1460KVE25-200BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1460KVE25-200BZXI reliable?

The price and inventory of CY7C1460KVE25-200BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1460KVE25-200BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1460KVE25-200BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1460KVE25-200BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1460KVE25-200BZXI?

CY7C1460KVE25-200BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1460KVE25-200BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1460KVE25-200BZXI?

For technical support, including CY7C1460KVE25-200BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1460KVE25-200BZXI requirements.

6.How does Aetrix verify that CY7C1460KVE25-200BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1460KVE25-200BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1460KVE25-200BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1460KVE25-200BZXI?

All CY7C1460KVE25-200BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1460KVE25-200BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1460KVE25-200BZXI part is unused and in its original packaging.

Return procedure for CY7C1460KVE25-200BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1460KVE25-200BZXI Tags

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