Infineon Technologies CY7C1460KVE33-167AXI

Overview

CY7C1460KVE33 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture, on-chip ECC, and 167 MHz operation (3.4 ns access time). It supports zero-wait-state back-to-back read/write cycles in high-throughput networking and telecom data-path buffers, featuring fully registered I/O, byte-write capability, and 3.3-V core / 3.3-V or 2.5-V I/O supply.

For engineers reviewing the CY7C1460KVE33 datasheet, CY7C1460KVE33 pinout, CY7C1460KVE33 application, or CY7C1460KVE33 equivalent, key selection criteria include burst order configuration (linear/interleaved), ECC-enabled soft-error resilience, synchronous self-timed write timing, and TQFP-100 or FBGA-165 package compatibility for space-constrained routing.

Technical Context

The device implements a fully synchronous, rising-edge-triggered pipeline with input and output registers clocked by CLK (qualified by CEN), enabling deterministic timing across all operations. Address, control, and data inputs are latched on CLK's rising edge; outputs are registered and driven synchronously, eliminating asynchronous OE dependency.

NoBL™ logic enables true back-to-back read/write transitions without bus turnaround latency, while on-chip ECC encoder/decoder corrects single-bit errors and detects double-bit errors per 36-bit word. Burst addressing supports both linear and interleaved orders via the MODE strap pin, configurable at power-up.

Key Specifications

Pinout & Package

Package: 100-pin JEDEC-standard Pb-free TQFP (14 mm × 14 mm, 0.5 mm pitch) and 165-ball FBGA (13 mm × 15 mm, 0.8 mm ball pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IS61WV102436BLL-167BLI and CY7C1462KVE33-167AXI, the CY7C1460KVE33 uniquely delivers 36-bit-wide ECC protection and full four-byte write select granularity - essential for high-integrity, wide-bus telecom and defense applications where data corruption risk must be minimized at the silicon level.

Availability

CY7C1460KVE33 is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, and radar signal processing systems requiring stable component supply, long-lifecycle support, and traceable sourcing of ECC-enabled SRAMs.

Supply support for CY7C1460KVE33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.

The CY7C1460KVE33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth data-path buffering in systems demanding deterministic timing and radiation-hardened reliability.

FAQ

What is the function of the MODE pin, and how should it be configured?

The MODE pin selects burst address order: HIGH enables interleaved burst, LOW enables linear burst. It is a strap pin sampled at power-up and must remain static during operation. Floating defaults to HIGH (interleaved). Configuration is fixed per power cycle and cannot be changed dynamically without reset.

Does CY7C1460KVE33 require external termination or impedance matching on DQ lines?

No external termination is required. The device integrates programmable drive strength and on-die termination (ODT) support via internal calibration circuitry. Layout guidelines recommend controlled-impedance traces (50 Ω single-ended) and proper VDDQ decoupling, but no discrete resistors are needed for signal integrity at 167 MHz.

How does the "ZZ" sleep mode interact with data retention and wake-up timing?

In ZZ mode, the device retains all stored data with ICC reduced to ≤50 µA. Wake-up is synchronous: the first valid CLK edge after ZZ deassertion initiates internal recovery, and full functionality resumes within one clock cycle - no additional stabilization delay is required before issuing commands.

Can the CY7C1460KVE33 operate with mixed VDDQ voltages (e.g., 3.3 V on DQa/DQb, 2.5 V on DQc/DQd)?

No. VDDQ is a single-supply rail shared across all DQ groups. The device supports either 3.3 V or 2.5 V I/O operation globally - not per-byte-group. Voltage selection is determined by the VDDQ supply applied to the designated VDDQ pins; mixing voltages violates absolute maximum ratings and risks latch-up.