Infineon Technologies CY7C1460KVE33-167BZC
- Part No.:
- CY7C1460KVE33-167BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1460KVE33-167BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,997
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1460KVE33-167BZC from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture, ECC support, and 167 MHz maximum bus operation. It delivers zero wait-state back-to-back read/write capability, 3.3-V core supply with 3.3-V/2.5-V I/O compatibility, and 3.4 ns max access time - deployed in high-throughput network packet buffers and telecom line card control memory.
For engineers reviewing the CY7C1460KVE33-167BZC datasheet, CY7C1460KVE33-167BZC pinout, CY7C1460KVE33-167BZC application, or CY7C1460KVE33-167BZC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select mapping to DQ/DQP groups, synchronous self-timed write timing, JTAG boundary-scan testability, and ECC correction latency impact on system-level error recovery.
Technical Context
This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs pass through output registers synchronized to the same clock edge. The internal NoBL™ logic eliminates bus turnaround latency by enabling consecutive read/write operations without pipeline stalls.
Burst addressing is configurable via the MODE strap pin (interleaved or linear), and writes are controlled by four independent byte-write enables (BWa–BWd) paired with WE, each governing one 9-bit data/parity group (DQa/DQPa through DQd/DQPd). On-chip ECC encodes/decodes 36-bit data + 8-bit parity per access, correcting single-bit errors and detecting double-bit errors in real time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 167 MHz - supports sustained 167 MT/s burst transfers with zero wait states |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for read cycles at rated speed |
| Supply Voltage | 3.3 V core (VDD), 3.3 V/2.5 V I/O (VDDQ) - enables interoperability with mixed-voltage SoC interfaces |
| ECC Support | On-chip SEC-DED - corrects single-bit errors and detects double-bit errors per 36-bit word |
| Burst Order | Configurable via MODE pin - interleaved (MODE = HIGH) or linear (MODE = LOW) |
| Power Dissipation | 190 mA max operating current (×36 mode) - determines thermal design margin at 167 MHz |
Pinout & Package
Package: 100-pin TQFP (JEDEC-standard Pb-free), body size 14 mm × 14 mm, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 20-bit synchronous address bus sampled on rising CLK edge; selects one of 1M locations |
| BWa–BWd | Byte Write Select | Four active-LOW synchronous controls - BWa governs DQa/DQPa (bits 0–8), BWb governs DQb/DQPb (9–17), etc. |
| CLK, CEN | Clock & Enable | CLK qualified by CEN: CEN = LOW enables clock recognition; CEN = HIGH holds internal state and extends prior cycle |
| DQa–DQd / DQPa–DQPd | Data I/O & Parity I/O | 36-bit data + 8-bit parity bidirectional bus - DQa–DQd carry data; DQPa–DQPd carry corresponding parity bits |
| CE1, CE2, CE3 | Chip Enable Group | Three synchronous enables - CE1/CE3 active LOW, CE2 active HIGH - enable bank selection in multi-SRAM systems |
| OE | Asynchronous Output Enable | Active-LOW tristate control - masked during write data phase and device deselection to prevent bus contention |
| MODE | Burst Configuration Strap | Static input - HIGH = interleaved burst order; LOW = linear burst order; must be stable before initialization |
| ADV/LD | Burst Counter Control | Advances internal address counter when HIGH; loads new address when LOW - used for burst sequence management |
| ZZ | Deep Sleep Mode | Active-LOW entry into low-power sleep - reduces standby current while preserving data integrity |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back read/write transitions with no pipeline bubbles - critical for deterministic latency in packet forwarding engines |
| Synchronous Self-Timed Writes | Eliminates external write pulse timing constraints - internal logic auto-terminates write cycles based on clock and BW/WE assertion |
| IEEE 1149.1 JTAG Boundary Scan | Supports production test and board-level diagnostics without requiring additional test pads or probes |
| Configurable Burst Order | MODE pin selection allows optimization for cache-line alignment (interleaved) or sequential DMA (linear) in host processor interfaces |
| 3.3-V Core / 2.5-V I/O Compatibility | Reduces I/O power consumption and EMI while maintaining signal integrity with 2.5-V ASIC/FPGA interfaces |
Applications
| Telecom Line Card Buffering | Network Packet Processing |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in carrier-grade routers with strict jitter requirements. IC Role / Device Role / Timing Role: High-speed dual-port buffer between ingress parser and egress scheduler - operates as a synchronous FIFO with ECC-protected storage. Use Value: 167 MHz zero-wait-state throughput ensures line-rate handling of 10 Gbps traffic; on-chip ECC prevents silent corruption in multi-megabit packet headers. |
Use Scenario: Temporary storage of flow-table entries and match-action results in programmable data plane ASICs. IC Role / Device Role / Timing Role: Configurable burst-access memory for TCAM-assisted lookup pipelines - accessed via interleaved bursts aligned to 64-byte cache lines. Use Value: MODE-selectable burst order matches host CPU cache behavior; byte-write enables allow atomic updates to individual flow metadata fields without full-word overwrite. |
| Industrial PLC Control Memory | Radar Signal Processing Buffer |
|
Use Scenario: Real-time I/O status logging and control algorithm workspace in safety-critical programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic executive tasks - synchronized to deterministic scan cycle clock. Use Value: ZZ sleep mode reduces idle power by >80%; ECC ensures functional safety compliance (IEC 61508 SIL-3) for stored control state. |
Use Scenario: Intermediate storage of digitized RF samples between ADC capture and FFT processing in phased-array radar systems. IC Role / Device Role / Timing Role: High-bandwidth circular buffer supporting continuous 167 MT/s write-read interleaving with sub-ns timing predictability. Use Value: Fully registered interface eliminates setup/hold violations across temperature; 3.4 ns access time guarantees sample-to-FFT latency budget adherence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-167BIN | No on-chip ECC; 100-pin TQFP only; identical 1M × 36 organization and 167 MHz speed grade | Lacks SEC-DED correction - requires external error handling or higher-reliability environments where soft errors are negligible | Select when ECC is not required and cost sensitivity outweighs radiation tolerance needs |
| IS61WV102436B-167TQLI | 3.3-V only (no VDDQ flexibility); no JTAG; 165-ball FBGA package only; same density and speed | Not suitable for mixed-voltage designs or boundary-scan test infrastructure; limited to space-constrained layouts requiring FBGA | Select when board layout mandates FBGA and JTAG test is unnecessary |
Compared with AS7C362000B-167BIN and IS61WV102436B-167TQLI, the CY7C1460KVE33-167BZC uniquely combines ECC, dual-voltage I/O, JTAG, and TQFP packaging - making it optimal for telecom and industrial systems demanding concurrent reliability, testability, and voltage interoperability.
Availability
CY7C1460KVE33-167BZC is available at Aetrix Electronics and suitable for telecom line card buffering, network packet processing, and industrial PLC control memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1460KVE33-167BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.
The CY7C1460KVE33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in networking and real-time control applications.
FAQ
What is the function of the MODE pin, and how does it affect burst addressing?
The MODE pin is a static strap input that configures burst order: HIGH selects interleaved burst (e.g., 0, 8, 4, 12…), LOW selects linear burst (e.g., 0, 1, 2, 3…). It must be stable before device initialization and cannot change during operation. Interleaved mode aligns with cache-line fetch patterns in many processors, while linear mode suits sequential DMA transfers.
How does the on-chip ECC operate, and what error conditions does it handle?
The ECC logic generates and checks 8-bit parity over each 36-bit word. It corrects any single-bit error (SEC) and detects any double-bit error (DED) within the same word. Correction occurs transparently during read cycles; detected double-bit errors assert no valid data - requiring system-level error handling. ECC is always active and cannot be disabled.
Can CY7C1460KVE33-167BZC operate with 2.5-V I/O while maintaining 3.3-V core supply?
Yes - VDD is fixed at 3.3 V ± 0.3 V for core logic, while VDDQ accepts either 3.3 V or 2.5 V ± 0.2 V for I/O buffers. This allows direct interfacing with 2.5-V FPGAs or ASICs without level shifters, reducing BOM count and signal integrity risk. I/O voltage must be set before initialization and remain stable.
What is the role of ADV/LD during burst operations, and how does it interact with CE signals?
ADV/LD controls the internal burst counter: HIGH advances the counter for next-address auto-increment; LOW loads a new starting address. It functions only when the device is selected (CE1/CE3 = LOW, CE2 = HIGH) and CEN = LOW. During deselection, ADV/LD must be driven LOW to prepare for next access - ensuring deterministic address loading after chip enable reassertion.
CY7C1460KVE33-167BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1460KVE33-167BZC FAQ
1.How can I place an order for CY7C1460KVE33-167BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1460KVE33-167BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1460KVE33-167BZC reliable?
The price and inventory of CY7C1460KVE33-167BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1460KVE33-167BZC is usually 5 days.
3.What payment methods are accepted for CY7C1460KVE33-167BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1460KVE33-167BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1460KVE33-167BZC?
CY7C1460KVE33-167BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1460KVE33-167BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1460KVE33-167BZC?
For technical support, including CY7C1460KVE33-167BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1460KVE33-167BZC requirements.
6.How does Aetrix verify that CY7C1460KVE33-167BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1460KVE33-167BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1460KVE33-167BZC meets industry standards.
7.What is the process for return or replacement of CY7C1460KVE33-167BZC?
All CY7C1460KVE33-167BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1460KVE33-167BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1460KVE33-167BZC part is unused and in its original packaging.
Return procedure for CY7C1460KVE33-167BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1460KVE33-167BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

