Infineon Technologies CY7C1460KVE33-200AXC
- Part No.:
- CY7C1460KVE33-200AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1460KVE33-200AXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,218
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1460KVE33 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous pipelined SRAM with NoBL™ architecture, integrated ECC, 3.3-V core supply, 2.5/3.3-V I/O support, and 200-MHz operation (3.2-ns access time). It serves as a high-throughput memory buffer in network packet processors requiring zero-wait-state back-to-back read/write transitions.
For engineers reviewing the CY7C1460KVE33 datasheet, CY7C1460KVE33 pinout, CY7C1460KVE33 application, or CY7C1460KVE33 equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write granularity (BWa–BWd), synchronous self-timed write timing, JTAG boundary-scan capability, and ECC-enabled soft-error resilience in telecom infrastructure.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK (qualified by CEN), and all outputs are driven from output registers synchronized to the same clock edge. The internal NoBL logic eliminates bus turnaround latency between consecutive reads and writes.
Burst addressing is configurable via MODE pin (interleaved or linear), and on-chip ECC encodes/decodes parity across DQa–DQd and corresponding DQPa–DQPd lines to detect and correct single-bit errors. Write operations are self-timed and qualified by WE and four independent byte-write enables.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 200 MHz - supports sustained 200-MHz bus cycles with zero wait states |
| Access Time | 3.2 ns - defines minimum clock-to-output delay for read operations at 200 MHz |
| Supply Voltages | VDD = 3.3 V ± 0.3 V (core); VDDQ = 2.5 V or 3.3 V (I/O) - enables mixed-voltage system interfacing |
| ECC Support | On-chip encoder/decoder for single-bit error correction - reduces SER in radiation-prone telecom environments |
| Burst Capability | Linear or interleaved burst order - selected by MODE pin; determines address increment pattern during burst accesses |
| Byte Write Control | Four independent BWa–BWd signals - enable selective 8-bit writes to each DQx/DQPx byte lane without masking |
Pinout & Package
Package: 100-pin TQFP (JEDEC-standard Pb-free), 14 × 14 mm body, 0.5-mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 20-bit synchronous address bus sampled on rising CLK edge; selects one of 1M locations |
| BWa–BWd | Byte Write Select | Active-low synchronous controls for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd - enables granular 8-bit writes |
| CLK, CEN | Clock & Enable | CLK qualified by active-low CEN; deasserting CEN extends previous cycle without deselecting device |
| DQa–DQd, DQPa–DQPd | Data I/O & Parity | 32-bit data + 4-bit parity bidirectional bus; parity lines mirror data lanes for ECC encoding/decoding |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous chip select (CE1/CE3 active-low, CE2 active-high) - enables multi-bank memory decoding |
| MODE | Burst Configuration | Strap pin setting burst order: HIGH = interleaved, LOW = linear; must remain static during operation |
| TCK/TMS/TDI/TDO | JTAG Interface | IEEE 1149.1-compliant boundary-scan test interface - supports production testing and debug visibility |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables true back-to-back read/write operations with no bus turnaround latency - sustains full 200-MHz throughput |
| Synchronous Self-Timed Writes | Eliminates external write-strobe timing constraints - internal logic completes write within one clock cycle |
| Configurable Burst Order | MODE pin selects linear or interleaved burst addressing - matches CPU or DMA controller burst patterns |
| On-Chip ECC | Single-bit error correction with dedicated parity I/O (DQPa–DQPd) - improves reliability without external logic |
| Flexible I/O Voltage | VDDQ supports 2.5 V or 3.3 V - allows direct interfacing with both legacy and low-voltage ASICs/FPGAs |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer between ingress parser and egress scheduler, operating at 200 MHz with zero wait states. Use Value: Enables deterministic packet buffering with guaranteed 3.2-ns read access and concurrent byte-write capability for header modification. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards handling 10 Gbps traffic. IC Role / Device Role / Timing Role: Synchronous burst memory for ATM cell reassembly and payload alignment, leveraging interleaved burst mode. Use Value: Supports continuous 200-MHz data streaming with ECC protection against cosmic-ray-induced bit flips in outdoor cabinets. |
| Radar Signal Processing Buffer | Industrial PLC Data Log |
Use Scenario: Capturing high-speed ADC samples from phased-array radar front-ends before FFT processing. IC Role / Device Role / Timing Role: Pipelined memory staging area for real-time signal acquisition, using ADV/LD to auto-increment burst addresses. Use Value: Delivers 36-Mbit depth with 200-MHz clocking to sustain >7 Gbps aggregate bandwidth across four 8-bit DQ lanes. | Use Scenario: Reliable event logging in safety-critical programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Nonvolatile-adjacent SRAM with ECC for storing timestamped I/O state changes and fault records. Use Value: On-chip ECC reduces uncorrectable errors by >99% compared to standard SRAM, meeting IEC 61508 SIL-2 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102436BLL-200TQLI | No on-chip ECC; 3.3-V only I/O (no 2.5-V support); identical 1M × 36 organization and 200-MHz speed grade | Lacks hardware error correction - requires external ECC logic or software mitigation in radiation-sensitive deployments | Select when cost sensitivity outweighs SER requirements and system already provides external parity handling |
| MT28EW128AxxDS-000WD1 | Quad SPI NOR Flash with SRAM-like interface; 128-Mbit density but asynchronous random access; no pipelined burst or NoBL logic | Nonvolatile storage vs volatile high-speed buffer - used for firmware storage, not real-time packet buffering | Select only for code shadowing or boot memory; not a functional replacement for CY7C1460KVE33's pipelined SRAM role |
Compared with IS61WV102436BLL-200TQLI, CY7C1460KVE33 adds ECC and dual-voltage I/O at the cost of higher power; versus MT28EW128AxxDS-000WD1, it delivers deterministic 3.2-ns latency and true burst concurrency essential for real-time data flow.
Availability
CY7C1460KVE33 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, radar signal processing buffers, and industrial PLC data logs requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1460KVE33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.
CY7C1460KVE33 belongs to the NoBL™ SRAM product line, engineered specifically for zero-latency, high-frequency memory interfacing in packet-switched and real-time signal processing systems.
FAQ
What is the function of the MODE pin on CY7C1460KVE33?
The MODE pin is a strap input that configures burst addressing order: pulled HIGH (or left floating) selects interleaved burst mode; pulled LOW selects linear burst mode. It must be held static during operation and is sampled at power-up or reset. This setting directly determines how the internal address counter increments during burst reads/writes.
Does CY7C1460KVE33 support 2.5-V-only I/O operation?
Yes - VDDQ may be supplied at 2.5 V ± 0.2 V while maintaining full 200-MHz operation and compatibility with 2.5-V logic families. The device retains all timing specifications and ECC functionality under 2.5-V I/O conditions, enabling seamless integration with legacy FPGAs and ASICs.
How does the on-chip ECC interact with the DQP pins?
DQPa–DQPd are dedicated parity I/O pins paired one-to-one with DQa–DQd. During write, the ECC encoder generates 4 parity bits from 32 data bits and drives them onto DQPa–DQPd. During read, the decoder uses those parity bits to detect and correct single-bit errors in the 32-bit data word before output registration.
Can CY7C1460KVE33 operate without JTAG enabled?
Yes - JTAG is disabled by default at power-on. The TAP controller remains inactive unless the JTAG instruction register is loaded via TMS/TCK sequence. No external pull-ups or configuration fuses are required to disable boundary scan; normal memory operation proceeds independently of JTAG state.
CY7C1460KVE33-200AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1460KVE33-200AXC FAQ
1.How can I place an order for CY7C1460KVE33-200AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1460KVE33-200AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1460KVE33-200AXC reliable?
The price and inventory of CY7C1460KVE33-200AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1460KVE33-200AXC is usually 5 days.
3.What payment methods are accepted for CY7C1460KVE33-200AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1460KVE33-200AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1460KVE33-200AXC?
CY7C1460KVE33-200AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1460KVE33-200AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1460KVE33-200AXC?
For technical support, including CY7C1460KVE33-200AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1460KVE33-200AXC requirements.
6.How does Aetrix verify that CY7C1460KVE33-200AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1460KVE33-200AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1460KVE33-200AXC meets industry standards.
7.What is the process for return or replacement of CY7C1460KVE33-200AXC?
All CY7C1460KVE33-200AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1460KVE33-200AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1460KVE33-200AXC part is unused and in its original packaging.
Return procedure for CY7C1460KVE33-200AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1460KVE33-200AXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

