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Infineon Technologies CY7C1461KV33-133AXC

Part No.:
CY7C1461KV33-133AXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1461KV33-133AXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,361

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Product details

Overview

CY7C1461KV33-133AXC from Cypress Semiconductor is a 36-Mbit synchronous flow-through SRAM (1M × 36 or 2M × 18) with NoBL™ architecture, designed for high-throughput memory subsystems requiring zero-wait-state back-to-back read/write transitions. It operates at 133 MHz with 6.5 ns clock-to-output delay, supports byte write via four BWx pins, and uses 3.3 V core/I/O with JEDEC-standard 100-pin TQFP packaging - deployed in network packet buffers and real-time DSP data caches.

For engineers reviewing the CY7C1461KV33-133AXC datasheet, CY7C1461KV33-133AXC pinout, CY7C1461KV33-133AXC application, or CY7C1461KV33-133AXC equivalent, key selection criteria include burst order control (linear/interleaved), synchronous self-timed write timing, ZZ sleep mode power management, and three-chip-enable depth expansion capability.

Technical Context

The device implements a synchronous flow-through architecture where all inputs (address, WE, BWx, CE, ADV/LD) are registered on the rising edge of CLK, qualified by CEN. Internal burst logic uses A0/A1 and MODE to generate linear or interleaved 4-word sequences without external address generation.

Write operations are fully self-timed: WE and BWx qualify data latching on the second clock edge, while output drivers are synchronously tri-stated during write data capture - eliminating bus contention without OE coordination. ZZ mode enables asynchronous low-power sleep with data retention, and CE1/CE2/CE3 support hierarchical bank decoding.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 or 2M × 18 configuration)
Max Clock Frequency 133 MHz - enables continuous 133 MT/s throughput with no dead cycles
Access Time (tCDV) 6.5 ns - defines minimum clock-to-valid-output delay for timing-critical interfaces
Supply Voltages VDD = 3.3 V ± 0.3 V (core), VDDQ = 3.3 V ± 0.3 V (I/O) - supports mixed-voltage system integration
Burst Capability Linear or interleaved 4-word burst - reduces address bus traffic and simplifies controller logic
Power Management ZZ sleep mode with automatic data retention - cuts standby current to ≤ 50 µA
Byte Write Control Four independent BWx (BWA–BWD) signals - enables granular 8-bit writes within 36-bit word

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC standard, Pb-free, body size 14 mm × 14 mm, 0.5 mm pitch.

Pin/Terminal Circuit Role Design Meaning
CLK Synchronous clock input Rising-edge-triggered master timing reference; qualified by CEN to gate internal state updates
CEN Clock enable Active-low synchronous gate - suspends clock recognition without deselecting device or losing state
CE1, CE3 Synchronous chip enable (active low) Combined with CE2 (active high) to form 3-signal decode for multi-SRAM depth expansion
ADV/LD Address advance/load control Low = load new address; High = increment internal burst counter - enables seamless burst sequencing
BWA–BWD Byte write select (active low) Individually enable 8-bit lanes within 36-bit DQ bus - supports partial-word writes without read-modify-write
ZZ Asynchronous sleep mode Active-high entry into low-power retention state - preserves data with no clock or CE activity required
DQ[0:35], DQP[A:D] Bidirectional data I/O (36 data + 4 parity) Synchronously latched inputs / registered outputs; direction controlled by OE and internal write detection

Key Features

Feature Design Value
No Bus Latency™ (NoBL™) architecture Eliminates dead cycles between consecutive read/write operations - enables true back-to-back transfers at full bus rate
Internally self-timed output buffer control Removes need for external OE timing coordination - output drivers auto-tri-state during write data capture
Registered synchronous inputs All address, control, and write-enable signals sampled on CLK rising edge - ensures deterministic setup/hold timing
Configurable burst order (MODE pin) Hardware-selectable linear or interleaved 4-word sequence - matches legacy ZBT or modern cache-line access patterns
Three chip enables with mixed polarity CE1/CE3 active-low + CE2 active-high - simplifies hierarchical memory banking without external logic

Applications

Network Packet Buffering DSP Data Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for packet reassembly and header modification.

Use Value: 133 MHz sustained throughput and NoBL™ architecture eliminate pipeline stalls during rapid write-read alternation across multiple ports.

Use Scenario: Real-time coefficient and sample storage in multi-channel audio or radar signal processors.

IC Role / Device Role / Timing Role: Synchronous data scratchpad supporting simultaneous fetch and store within single instruction cycle.

Use Value: 6.5 ns tCDV and registered inputs meet tight timing budgets for 133 MHz DSP memory interfaces without added wait states.

Telecom Line Card Memory Industrial Motion Controller Buffer

Use Scenario: Holding time-division multiplexed (TDM) voice channel samples in base station interface cards.

IC Role / Device Role / Timing Role: Burst-capable memory aligned to frame sync clocks for efficient channel aggregation.

Use Value: Linear/interleaved burst modes match TDM frame structures; ZZ sleep mode reduces power between active frames.

Use Scenario: Buffering position, velocity, and torque commands in closed-loop servo drives with microsecond jitter constraints.

IC Role / Device Role / Timing Role: Deterministic-access memory for motion profile look-up tables and real-time feedback logging.

Use Value: Synchronous self-timed writes guarantee consistent 133 MHz write latency - critical for jitter-sensitive control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72V2115L133BG 36-Mbit, 133 MHz, but uses QDR-II+ interface with separate read/write clocks - requires dual-clock domain design Targeted at high-end networking ASICs with dedicated QDR controllers - not drop-in compatible Select only if existing system already implements QDR-II+ PHY and timing closure is verified
ISSI IS61WV102436BLL-133TQLI Pin-compatible 100-pin TQFP, same 1M×36 density and 133 MHz rating, but lacks ZZ sleep mode and uses different burst control (no MODE pin) Lower-cost alternative where deep sleep is unnecessary and burst order is fixed in firmware Prefer when BOM cost sensitivity outweighs power optimization needs and burst flexibility is not required

Compared with IDT72V2115L133BG and IS61WV102436BLL-133TQLI, CY7C1461KV33-133AXC uniquely combines NoBL™ zero-latency operation, hardware-configurable burst order, and asynchronous ZZ sleep - making it optimal for systems demanding both performance determinism and dynamic power scaling.

Availability

CY7C1461KV33-133AXC is available at Aetrix Electronics and suitable for network packet buffering, DSP data caching, telecom line card memory, and industrial motion controller buffer applications requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1461KV33-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically to replace ZBT™ SRAMs in bandwidth-constrained systems where back-to-back read/write efficiency directly impacts real-time throughput.

FAQ

What is the function of the MODE pin on CY7C1461KV33-133AXC?

The MODE pin selects burst address sequence: tied to GND for linear burst (0,1,2,3), or to VDD/floating for interleaved burst (0,2,4,6). It is sampled at power-up and remains static during operation - no runtime reconfiguration is supported. This hardware-strapped setting eliminates software overhead and ensures deterministic burst behavior across temperature and voltage ranges.

How does the ZZ sleep mode interact with chip enables and clock signals?

ZZ is asynchronous and overrides all synchronous controls: when asserted HIGH, the device enters low-power retention regardless of CE1/CE2/CE3 states or CLK/CEN activity. Data is preserved, and wake-up occurs within 20 ns of ZZ deassertion - faster than full re-initialization. During ZZ, CEN and CLK may be stopped entirely, reducing system-level power without affecting memory integrity.

Can CY7C1461KV33-133AXC operate with 2.5 V I/O voltage?

No - this variant (CY7C1461KV33-133AXC) is specified only for 3.3 V I/O (VDDQ = 3.3 V ± 0.3 V). While earlier revisions of the CY7C146x family supported dual 3.3 V/2.5 V I/O, the -133AXC speed grade and package configuration are validated exclusively at 3.3 V. Using 2.5 V on VDDQ violates absolute maximum ratings and risks data corruption or latch-up.

Is the CY7C1461KV33-133AXC pin-compatible with CY7C1463KV33-133AXC?

Yes - both share identical 100-pin TQFP footprint and signal mapping, but differ in organization: CY7C1461KV33 is 1M × 36, while CY7C1463KV33 is 2M × 18. They are functionally equivalent in timing, control logic, and feature set (NoBL™, ZZ, burst modes), allowing PCB reuse across density variants when layout accommodates the same pinout.

CY7C1461KV33-133AXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.5 ns
Voltage - Supply:
3.135V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1461KV33-133AXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1461KV33-133AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1461KV33-133AXC reliable?

The price and inventory of CY7C1461KV33-133AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1461KV33-133AXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1461KV33-133AXC transactions.

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CY7C1461KV33-133AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1461KV33-133AXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1461KV33-133AXC?

For technical support, including CY7C1461KV33-133AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1461KV33-133AXC requirements.

6.How does Aetrix verify that CY7C1461KV33-133AXC is sourced from the original manufacturer or authorized distributors?

All CY7C1461KV33-133AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1461KV33-133AXC meets industry standards.

7.What is the process for return or replacement of CY7C1461KV33-133AXC?

All CY7C1461KV33-133AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1461KV33-133AXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1461KV33-133AXC part is unused and in its original packaging.

Return procedure for CY7C1461KV33-133AXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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