Infineon Technologies CY7C1461KV33-133AXCT

Overview

CY7C1461KV33-133AXCT from Cypress Semiconductor is a 36-Mbit synchronous flow-through SRAM (1M × 36 or 2M × 18 configuration) featuring NoBL™ architecture, supporting true back-to-back read/write operations at 133 MHz with zero wait states and 6.5 ns clock-to-output delay. It operates on 3.3 V core/I/O supply, includes registered inputs, byte write capability, and three chip enables for depth expansion - deployed in high-bandwidth packet buffering and network switch fabric control planes.

For engineers reviewing the CY7C1461KV33-133AXCT datasheet, CY7C1461KV33-133AXCT pinout, CY7C1461KV33-133AXCT application, or CY7C1461KV33-133AXCT equivalent, key selection criteria include burst order configurability (linear/interleaved), synchronous self-timed writes, automatic output tri-state during write data cycles, and ZZ sleep mode for low-power standby in telecom infrastructure.

Technical Context

The device implements a synchronous, pipelined flow-through architecture where all inputs (address, WE, BWx, CE, ADV/LD) are registered on the rising edge of CLK, qualified by CEN. Burst addressing is driven by a two-bit counter using A0/A1, selectable via MODE pin for linear or interleaved sequences.

Write operations use on-chip self-timed logic: data is latched on the second clock edge after address registration, eliminating external timing constraints. Output drivers are synchronously tri-stated during write data capture regardless of OE state, preventing bus contention in shared-memory systems.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), JEDEC-standard Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PF and IS61WV102436BLL-133TQLI, CY7C1461KV33-133AXCT offers superior timing predictability in write-read turnaround scenarios due to its dedicated NoBL™ control logic, while the ISSI part extends thermal reliability without altering interface behavior.

Availability

CY7C1461KV33-133AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card control memory, baseband processing cache, and radar signal processing FIFO applications requiring stable component supply and long-term obsolescence planning.

Supply support for CY7C1461KV33-133AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-wait-state, high-throughput buffering in networking and real-time signal processing systems where deterministic latency and burst efficiency are critical.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin configures burst order: tied LOW for linear burst (0,1,2,3), HIGH or floating for interleaved burst (0,2,1,3). This setting directly controls the internal two-bit counter fed by A0/A1 and determines address sequencing during burst reads/writes - no software or register programming is required.

How does the device handle output tri-state during write operations?

Outputs (DQs/DQP) are automatically tri-stated during the data portion of a write sequence, regardless of OE state. This hardware-enforced behavior prevents bus contention and eliminates the need for precise OE timing control - OE remains effective only during read cycles and deselect states.

Can CY7C1461KV33-133AXCT operate with 2.5 V I/O voltage?

No - this variant is specified exclusively for 3.3 V I/O (VDDQ = 3.3 V ± 0.3 V). While earlier CY7C146xK series parts supported dual 3.3 V/2.5 V I/O, the -133AXCT suffix denotes the 3.3 V-only version; using 2.5 V on VDDQ violates absolute maximum ratings and risks functional failure.

What is the role of ADV/LD during address loading and burst advancement?

ADV/LD is a dual-function synchronous input: driven LOW to load a new address into the address register; driven HIGH to advance the internal burst counter. After any chip deselect, ADV/LD must be asserted LOW before the next access to ensure correct address initialization - failure causes undefined burst starting point.