Infineon Technologies CY7C1461KV33-133AXI

Overview

CY7C1461KV33-133AXI from Cypress Semiconductor is a 36-Mbit synchronous flow-through SRAM (1M × 36) with NoBL™ architecture, designed for high-throughput memory buffering in networking and telecom data paths. It supports true back-to-back read/write operations at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, uses 3.3 V core/I/O supply, and features registered inputs, byte write capability, and three chip enables for depth expansion.

For engineers reviewing the CY7C1461KV33-133AXI datasheet, CY7C1461KV33-133AXI pinout, CY7C1461KV33-133AXI application, or CY7C1461KV33-133AXI equivalent, key selection criteria include burst mode configuration (linear/interleaved), synchronous self-timed write timing, ZZ sleep mode power management, and TQFP-100 pin compatibility with ZBT™-class systems.

Technical Context

This SRAM implements a synchronous flow-through architecture with pipelined address and data registers, where all inputs (A[1:0], WE, BWx, CE1–CE3, ADV/LD, CEN) are sampled on the rising edge of CLK. The internal two-bit burst counter-driven by A0/A1 and controlled by MODE-supports linear or interleaved 4-word bursts without external address sequencing.

Write operations use on-chip self-timed logic to complete within one clock cycle; output drivers are synchronously tri-stated during write data capture regardless of OE state. The device integrates asynchronous ZZ sleep control and synchronous CEN gating to suspend clock recognition while preserving data integrity and extending previous cycle timing.

Key Specifications

Pinout & Package

Package: 100-pin JEDEC-standard Pb-free TQFP (14 mm × 14 mm, 0.5 mm pitch), thermally enhanced for sustained 133 MHz operation in industrial temperature range (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFI and IS61WV102436BLL-133TQLI, CY7C1461KV33-133AXI uniquely combines programmable burst order, ZZ sleep, and full ZBT™ pin compatibility - critical for migration paths and power-constrained telecom hardware.

Availability

CY7C1461KV33-133AXI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing cache requiring stable component supply across extended product lifecycles.

Supply support for CY7C1461KV33-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1461KV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, low-latency memory access in packet-switched infrastructure where back-to-back read/write transitions dominate system throughput.

FAQ

What is the function of the MODE pin, and how must it be configured?

The MODE pin selects burst order: tied to GND for linear burst, tied to VDD or left floating for interleaved burst. It is sampled at power-up and cannot be changed dynamically during operation. Incorrect strapping causes misaligned burst addresses and data corruption in cache or DMA transfers relying on specific burst patterns.

How does the ZZ sleep mode interact with CEN and chip enables?

ZZ is asynchronous and overrides CEN and CE states: asserting ZZ HIGH places the device in low-power sleep regardless of CEN or CE status, preserving data without clock or chip select activity. Exiting ZZ requires ZZ LOW followed by valid CE/CEN assertion - no reset or initialization sequence is needed.

Can CY7C1461KV33-133AXI operate with 2.5 V I/O voltage?

No - this variant (CY7C1461KV33-133AXI) is specified only for 3.3 V VDDQ operation. While earlier revisions supported dual 3.3 V/2.5 V I/O, the -133AXI suffix denotes the 3.3 V-only version; using 2.5 V on VDDQ violates absolute maximum ratings and risks data retention failure.

What happens to DQ outputs during a write cycle when OE is asserted LOW?

DQ outputs are automatically tri-stated during the data portion of every write cycle - even if OE is LOW - to prevent bus contention. This behavior is hardwired in the output steering logic and cannot be overridden; OE only controls output state during read cycles and idle periods.