Infineon Technologies CY7C1462KV25-200AXCT
- Part No.:
- CY7C1462KV25-200AXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1462KV25-200AXCT.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,349
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Product details
Overview
CY7C1462KV25-200AXCT from Cypress Semiconductor is a 36-Mbit synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, configured as 2M × 18 (18-bit data bus), operating at 200 MHz with 3.2 ns clock-to-output delay, 2.5 V core/I/O supply, and JEDEC-standard 100-pin TQFP package. It enables zero-wait-state back-to-back read/write in high-throughput packet buffering applications.
For engineers reviewing the CY7C1462KV25-200AXCT datasheet, CY7C1462KV25-200AXCT pinout, CY7C1462KV25-200AXCT application, or CY7C1462KV25-200AXCT equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability (BWa–BWb), synchronous self-timed writes, JTAG boundary scan compliance, and ECC-enabled soft error mitigation for telecom infrastructure memory subsystems.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK; all outputs are driven through output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states.
It integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate (SER) in radiation-sensitive environments. Burst addressing supports both linear and interleaved orders, controlled by MODE and ADV/LD, with synchronous chip enables (CE1, CE2, CE3) and asynchronous OE for flexible bank selection and output control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 200 MHz - supports sustained 200 MHz bus operation with zero wait states |
| Access Time | 3.2 ns - guaranteed clock-to-output delay for timing-critical pipeline stages |
| Supply Voltage | 2.5 V core and I/O - compatible with 2.5 V system rails; no level translation required |
| ECC Support | On-chip SEC/DED - corrects single-bit errors and detects double-bit errors in real time |
| Burst Capability | Linear or interleaved - selectable via MODE pin for cache-line or DMA-aligned transfers |
| Byte Write Control | BWa & BWb - independently enable write to upper/lower 9-bit subwords of 18-bit data bus |
Pinout & Package
Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 14 mm × 14 mm body, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Address Input | Synchronous address bus (19 bits); sampled on rising CLK edge to select 2M locations |
| BWa, BWb | Byte Write Select | Active-low controls write to DQa/DQPa (BWa) and DQb/DQPb (BWb) - enables 9-bit subword writes |
| CLK | Clock Input | Primary synchronous timing reference; qualified by CEN; drives all input/output registers |
| CEN | Clock Enable | Active-low gate for CLK; suspends operation without deselecting device - extends previous cycle |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous enable (CE1/CE3 active-low, CE2 active-high) for multi-bank memory mapping |
| DQa–DQb, DQPa–DQPb | Data I/O | 18-bit bidirectional data bus + 4-bit parity bus; direction controlled by OE and internal state machine |
| OE | Output Enable | Asynchronous active-low control; tristates outputs during write data phase regardless of OE state |
| ADV/LD | Burst Address Control | High = advance internal counter; Low = load new address - enables burst vs. random access mode |
| ZZ | Deep Sleep | Asynchronous active-low entry into low-power sleep mode (reduces ICC to <5 mA) |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Pipelined Architecture | Enables unlimited back-to-back read/write cycles with zero wait states - doubles effective bandwidth vs. async SRAM |
| Synchronous Self-Timed Writes | Eliminates external write pulse timing constraints - internal logic completes write within one clock cycle |
| JTAG Boundary Scan (IEEE 1149.1) | Supports production test and board-level debug without additional test pads or probes |
| Configurable Burst Order | MODE pin selects linear (sequential) or interleaved (cache-friendly) burst addressing for optimal system alignment |
| ZZ Sleep Mode | Reduces standby current to <5 mA while retaining memory contents - critical for power-managed telecom line cards |
Applications
| Telecom Packet Buffering | Network Processor Interface |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in carrier-grade switches before classification and forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency shared buffer between MAC and switch fabric; operates as 2M × 18 synchronous FIFO with ECC protection. Use Value: 200 MHz zero-wait-state operation sustains 3.6 Gbps throughput; on-chip ECC prevents frame corruption from alpha-particle strikes in central office environments. | Use Scenario: Serving as instruction/data cache for multi-core network processors executing deep packet inspection. IC Role / Device Role / Timing Role: Burst-accessible SRAM interfaced directly to NP's 18-bit wide external memory bus; uses interleaved burst mode for cache-line fills. Use Value: ADV/LD-controlled burst addressing reduces average access latency by 40% vs. random access; ZZ mode cuts idle power by >90% during traffic lulls. |
| Radar Signal Processing | Industrial PLC Data Logging |
Use Scenario: Capturing high-rate ADC samples from phased-array radar receivers for real-time beamforming. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via CE partitioning) accepting parallel sample streams and feeding DSP cores with deterministic latency. Use Value: Fully registered interface ensures setup/hold timing closure at 200 MHz; ECC prevents bit flips in neutron-rich airborne environments. | Use Scenario: Storing sensor history and control logs in ruggedized programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM used for cyclic data ring buffer; powered from 2.5 V rail shared with FPGA logic. Use Value: 100-pin TQFP provides mechanical robustness and thermal stability across –40°C to +85°C; byte-write capability minimizes write energy per log entry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L15PF | 2.5 V, 36-Mbit ZBT SRAM; no on-chip ECC; 15 ns access at 133 MHz | Lacks SER mitigation; lower max frequency limits throughput in 200 MHz systems | Select only if ECC is handled externally and clock rate ≤133 MHz |
| ISSI IS61WV102418BLL-200TQLI | 2.5 V, 18-Mbit (1M × 18); no ECC; 200 MHz, 3.4 ns access; same 100-pin TQFP | Half density; no burst mode or JTAG; lower pin count for simpler designs | Choose when 18-Mbit capacity suffices and ECC/burst are not required |
Compared with IDT72V2115L15PF and IS61WV102418BLL-200TQLI, CY7C1462KV25-200AXCT uniquely delivers 36-Mbit density, on-chip ECC, and full NoBL™ pipelining at 200 MHz in a drop-in-compatible TQFP - essential for next-gen telecom and defense systems requiring reliability and bandwidth.
Availability
CY7C1462KV25-200AXCT is available at Aetrix Electronics and suitable for telecom infrastructure, network processor design, radar signal processing, and industrial PLC development requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for CY7C1462KV25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.
This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking and real-time signal processing equipment.
FAQ
What is the function of the MODE pin on CY7C1462KV25-200AXCT?
The MODE pin selects burst addressing order: logic HIGH configures linear burst (A0–A18 increment sequentially), LOW selects interleaved burst (bit-reversed address sequence). This setting is sampled at power-up or reset and remains static during operation - it does not support dynamic reconfiguration.
Does CY7C1462KV25-200AXCT support independent parity write control?
Yes. Parity bits on DQPa–DQPb are written concurrently with data on DQa–DQb under identical byte-write enable conditions: BWa gates DQa/DQPa, BWb gates DQb/DQPb. There is no separate parity write control - parity is always updated with its associated 9-bit data subword.
How does the ZZ (sleep) mode interact with ECC functionality?
In ZZ mode, the SRAM enters ultra-low-power state (<5 mA ICC) while preserving all stored data and ECC syndrome bits. Upon exit, ECC remains fully operational immediately - no reinitialization or syndrome recalculation is required. The memory array and ECC circuitry retain state transparently across sleep/wake cycles.
Can CE2 be left unconnected in a single-SRAM system?
No. CE2 is an active-HIGH synchronous enable and must be held at a valid logic level. Leaving it floating risks metastability and unintended device deselection. For single-device use, tie CE2 HIGH (to VDD) and control selection using CE1/CE3. The datasheet specifies VIH ≥ 2.0 V for reliable operation.
CY7C1462KV25-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1462KV25-200AXCT FAQ
1.How can I place an order for CY7C1462KV25-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1462KV25-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1462KV25-200AXCT reliable?
The price and inventory of CY7C1462KV25-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1462KV25-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1462KV25-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1462KV25-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1462KV25-200AXCT?
CY7C1462KV25-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1462KV25-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1462KV25-200AXCT?
For technical support, including CY7C1462KV25-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1462KV25-200AXCT requirements.
6.How does Aetrix verify that CY7C1462KV25-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1462KV25-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1462KV25-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1462KV25-200AXCT?
All CY7C1462KV25-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1462KV25-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1462KV25-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1462KV25-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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