Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1462KV25-200AXCT

Part No.:
CY7C1462KV25-200AXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixCY7C1462KV25-200AXCT.pdf
Description:
IC SRAM 36MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,349

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1462KV25-200AXCT from Cypress Semiconductor is a 36-Mbit synchronous pipelined SRAM with NoBL™ architecture and on-chip ECC, configured as 2M × 18 (18-bit data bus), operating at 200 MHz with 3.2 ns clock-to-output delay, 2.5 V core/I/O supply, and JEDEC-standard 100-pin TQFP package. It enables zero-wait-state back-to-back read/write in high-throughput packet buffering applications.

For engineers reviewing the CY7C1462KV25-200AXCT datasheet, CY7C1462KV25-200AXCT pinout, CY7C1462KV25-200AXCT application, or CY7C1462KV25-200AXCT equivalent, key selection criteria include burst mode support (linear/interleaved), byte-write capability (BWa–BWb), synchronous self-timed writes, JTAG boundary scan compliance, and ECC-enabled soft error mitigation for telecom infrastructure memory subsystems.

Technical Context

This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK; all outputs are driven through output registers synchronized to CLK. The internal NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states.

It integrates on-chip ECC encoding/decoding for single-bit error correction and double-bit error detection, reducing soft error rate (SER) in radiation-sensitive environments. Burst addressing supports both linear and interleaved orders, controlled by MODE and ADV/LD, with synchronous chip enables (CE1, CE2, CE3) and asynchronous OE for flexible bank selection and output control.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (2M × 18 configuration)
Max Clock Frequency200 MHz - supports sustained 200 MHz bus operation with zero wait states
Access Time3.2 ns - guaranteed clock-to-output delay for timing-critical pipeline stages
Supply Voltage2.5 V core and I/O - compatible with 2.5 V system rails; no level translation required
ECC SupportOn-chip SEC/DED - corrects single-bit errors and detects double-bit errors in real time
Burst CapabilityLinear or interleaved - selectable via MODE pin for cache-line or DMA-aligned transfers
Byte Write ControlBWa & BWb - independently enable write to upper/lower 9-bit subwords of 18-bit data bus

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 14 mm × 14 mm body, 0.5 mm pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0, A1, A[2:18]Address InputSynchronous address bus (19 bits); sampled on rising CLK edge to select 2M locations
BWa, BWbByte Write SelectActive-low controls write to DQa/DQPa (BWa) and DQb/DQPb (BWb) - enables 9-bit subword writes
CLKClock InputPrimary synchronous timing reference; qualified by CEN; drives all input/output registers
CENClock EnableActive-low gate for CLK; suspends operation without deselecting device - extends previous cycle
CE1, CE2, CE3Chip EnableThree-level synchronous enable (CE1/CE3 active-low, CE2 active-high) for multi-bank memory mapping
DQa–DQb, DQPa–DQPbData I/O18-bit bidirectional data bus + 4-bit parity bus; direction controlled by OE and internal state machine
OEOutput EnableAsynchronous active-low control; tristates outputs during write data phase regardless of OE state
ADV/LDBurst Address ControlHigh = advance internal counter; Low = load new address - enables burst vs. random access mode
ZZDeep SleepAsynchronous active-low entry into low-power sleep mode (reduces ICC to <5 mA)

Key Features

FeatureDesign Value
NoBL™ Pipelined ArchitectureEnables unlimited back-to-back read/write cycles with zero wait states - doubles effective bandwidth vs. async SRAM
Synchronous Self-Timed WritesEliminates external write pulse timing constraints - internal logic completes write within one clock cycle
JTAG Boundary Scan (IEEE 1149.1)Supports production test and board-level debug without additional test pads or probes
Configurable Burst OrderMODE pin selects linear (sequential) or interleaved (cache-friendly) burst addressing for optimal system alignment
ZZ Sleep ModeReduces standby current to <5 mA while retaining memory contents - critical for power-managed telecom line cards

Applications

Telecom Packet BufferingNetwork Processor Interface

Use Scenario: Storing incoming/outgoing Ethernet frames in carrier-grade switches before classification and forwarding.

IC Role / Device Role / Timing Role: High-speed, low-latency shared buffer between MAC and switch fabric; operates as 2M × 18 synchronous FIFO with ECC protection.

Use Value: 200 MHz zero-wait-state operation sustains 3.6 Gbps throughput; on-chip ECC prevents frame corruption from alpha-particle strikes in central office environments.

Use Scenario: Serving as instruction/data cache for multi-core network processors executing deep packet inspection.

IC Role / Device Role / Timing Role: Burst-accessible SRAM interfaced directly to NP's 18-bit wide external memory bus; uses interleaved burst mode for cache-line fills.

Use Value: ADV/LD-controlled burst addressing reduces average access latency by 40% vs. random access; ZZ mode cuts idle power by >90% during traffic lulls.

Radar Signal ProcessingIndustrial PLC Data Logging

Use Scenario: Capturing high-rate ADC samples from phased-array radar receivers for real-time beamforming.

IC Role / Device Role / Timing Role: Dual-port-capable buffer (via CE partitioning) accepting parallel sample streams and feeding DSP cores with deterministic latency.

Use Value: Fully registered interface ensures setup/hold timing closure at 200 MHz; ECC prevents bit flips in neutron-rich airborne environments.

Use Scenario: Storing sensor history and control logs in ruggedized programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM used for cyclic data ring buffer; powered from 2.5 V rail shared with FPGA logic.

Use Value: 100-pin TQFP provides mechanical robustness and thermal stability across –40°C to +85°C; byte-write capability minimizes write energy per log entry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72V2115L15PF2.5 V, 36-Mbit ZBT SRAM; no on-chip ECC; 15 ns access at 133 MHzLacks SER mitigation; lower max frequency limits throughput in 200 MHz systemsSelect only if ECC is handled externally and clock rate ≤133 MHz
ISSI IS61WV102418BLL-200TQLI2.5 V, 18-Mbit (1M × 18); no ECC; 200 MHz, 3.4 ns access; same 100-pin TQFPHalf density; no burst mode or JTAG; lower pin count for simpler designsChoose when 18-Mbit capacity suffices and ECC/burst are not required

Compared with IDT72V2115L15PF and IS61WV102418BLL-200TQLI, CY7C1462KV25-200AXCT uniquely delivers 36-Mbit density, on-chip ECC, and full NoBL™ pipelining at 200 MHz in a drop-in-compatible TQFP - essential for next-gen telecom and defense systems requiring reliability and bandwidth.

Availability

CY7C1462KV25-200AXCT is available at Aetrix Electronics and suitable for telecom infrastructure, network processor design, radar signal processing, and industrial PLC development requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1462KV25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking and real-time signal processing equipment.

FAQ

What is the function of the MODE pin on CY7C1462KV25-200AXCT?

The MODE pin selects burst addressing order: logic HIGH configures linear burst (A0–A18 increment sequentially), LOW selects interleaved burst (bit-reversed address sequence). This setting is sampled at power-up or reset and remains static during operation - it does not support dynamic reconfiguration.

Does CY7C1462KV25-200AXCT support independent parity write control?

Yes. Parity bits on DQPa–DQPb are written concurrently with data on DQa–DQb under identical byte-write enable conditions: BWa gates DQa/DQPa, BWb gates DQb/DQPb. There is no separate parity write control - parity is always updated with its associated 9-bit data subword.

How does the ZZ (sleep) mode interact with ECC functionality?

In ZZ mode, the SRAM enters ultra-low-power state (<5 mA ICC) while preserving all stored data and ECC syndrome bits. Upon exit, ECC remains fully operational immediately - no reinitialization or syndrome recalculation is required. The memory array and ECC circuitry retain state transparently across sleep/wake cycles.

Can CE2 be left unconnected in a single-SRAM system?

No. CE2 is an active-HIGH synchronous enable and must be held at a valid logic level. Leaving it floating risks metastability and unintended device deselection. For single-device use, tie CE2 HIGH (to VDD) and control selection using CE1/CE3. The datasheet specifies VIH ≥ 2.0 V for reliable operation.

CY7C1462KV25-200AXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.2 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x20)

CY7C1462KV25-200AXCT FAQ

1.How can I place an order for CY7C1462KV25-200AXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1462KV25-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1462KV25-200AXCT reliable?

The price and inventory of CY7C1462KV25-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1462KV25-200AXCT is usually 5 days.

3.What payment methods are accepted for CY7C1462KV25-200AXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1462KV25-200AXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1462KV25-200AXCT?

CY7C1462KV25-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1462KV25-200AXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1462KV25-200AXCT?

For technical support, including CY7C1462KV25-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1462KV25-200AXCT requirements.

6.How does Aetrix verify that CY7C1462KV25-200AXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1462KV25-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1462KV25-200AXCT meets industry standards.

7.What is the process for return or replacement of CY7C1462KV25-200AXCT?

All CY7C1462KV25-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1462KV25-200AXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1462KV25-200AXCT part is unused and in its original packaging.

Return procedure for CY7C1462KV25-200AXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1462KV25-200AXCT Tags

  • CY7C1462KV25-200AXCT
  • CY7C1462KV25-200AXCT PDF
  • CY7C1462KV25-200AXCT Datasheet
  • CY7C1462KV25-200AXCT Specifications
  • CY7C1462KV25-200AXCT Images
  • Infineon Technologies
  • Infineon Technologies CY7C1462KV25-200AXCT
  • Buy CY7C1462KV25-200AXCT
  • CY7C1462KV25-200AXCT Price
  • CY7C1462KV25-200AXCT Distributor
  • CY7C1462KV25-200AXCT Supplier
  • CY7C1462KV25-200AXCT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER