Infineon Technologies CY7C1462KVE25-167BZI
- Part No.:
- CY7C1462KVE25-167BZI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1462KVE25-167BZI.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,014
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1462KVE25-167BZI from Cypress Semiconductor is a 36-Mbit synchronous pipelined SRAM with NoBL™ architecture and integrated ECC, configured as 2M × 18 or 1M × 36. It operates at 167 MHz with 3.4 ns max access time, 2.5 V core/I/O supply, and supports zero-wait-state burst reads/writes in networking packet buffers and telecom line cards.
For engineers reviewing the CY7C1462KVE25-167BZI datasheet, CY7C1462KVE25-167BZI pinout, CY7C1462KVE25-167BZI application, or CY7C1462KVE25-167BZI equivalent, key selection criteria include ECC-enabled soft-error resilience, synchronous self-timed write timing, byte-write granularity (BWa–BWb), JTAG boundary-scan testability, and compatibility with ZBT™-based memory subsystems.
Technical Context
This SRAM implements fully registered pipelined operation: all address, control, and data inputs are latched on the rising edge of CLK; all outputs pass through output registers synchronized to CLK. The internal burst logic supports linear or interleaved addressing, and ADV/LD controls counter advancement or new address loading.
ECC encoding/decoding is performed on-chip for all 36-bit data words (including parity bits DQPa–DQPd), correcting single-bit errors and detecting double-bit errors. Sleep mode (ZZ) is controlled asynchronously, while clock enable (CEN) provides cycle extension without deselection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 or 1M × 36 configuration) |
| Max Clock Frequency | 167 MHz - enables sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - defines minimum clock-to-output delay for read cycles |
| Core/I/O Voltage | 2.5 V - requires single-supply rail; eliminates level-shifting in 2.5 V systems |
| ECC Support | On-chip SEC-DED - reduces soft error rate in radiation-prone telecom/networking environments |
| Burst Capability | Linear or interleaved - matches CPU/cache burst patterns without address reissuance |
| Byte Write Selects | BWa, BWb - enables independent 18-bit word writes in 2M × 18 mode |
Pinout & Package
Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch) and 165-ball FBGA (13 mm × 11 mm, 0.8 mm ball pitch); this part uses the Pb-free 100-pin TQFP variant (suffix BZI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Address Input | Synchronous inputs sampled on rising CLK edge; define 2M-word (2M × 18) or 1M-word (1M × 36) address space |
| BWa, BWb | Byte Write Select | Active-low synchronous controls for 18-bit data segments; BWa → DQa/DQPa, BWb → DQb/DQPb |
| CLK, CEN | Clock & Enable | CLK qualified by CEN; CEN deassertion extends prior cycle without losing synchronization |
| CE1, CE2, CE3 | Chip Enable | Three-level synchronous bank select (CE1/CE3 active low, CE2 active high) for multi-SRAM systems |
| DQa–DQb, DQPa–DQPb | Data I/O + Parity | 36-bit bidirectional interface (18 data + 2 parity per 18-bit segment); tristated synchronously during writes |
| OE | Output Enable | Asynchronous control; masked during write data phase to prevent bus contention |
| ZZ | Deep Sleep | Asynchronous entry to low-power state; retains data but halts clock domain activity |
Key Features
| Feature | Design Value |
|---|---|
| NoBL™ Architecture | Enables true back-to-back read/write operations with zero bus latency - eliminates pipeline stalls in high-throughput packet buffering |
| Synchronous Self-Timed Writes | Internal write timing control removes external write-pulse width constraints - simplifies timing closure in FPGA- or ASIC-connected systems |
| JTAG Boundary Scan (IEEE 1149.1) | Full 165-pin (FBGA) or 100-pin (TQFP) scan chain - supports production test and board-level debug without additional test points |
| Zero-Wait-State Burst Mode | Supports continuous 256-word bursts at 167 MHz - matches legacy ZBT™ system timing without redesign |
| 2.5 V Single-Rail Operation | Eliminates need for separate core/I/O regulators - reduces BOM count and PCB routing complexity in compact line-card designs |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: High-speed OC-192/STM-64 interface buffering in carrier-grade routers. IC Role / Device Role / Timing Role: Primary burst-access SRAM for ingress/egress packet queues with deterministic latency. Use Value: 167 MHz zero-wait-state operation sustains 6 Gbps aggregate throughput across dual 18-bit ports while ECC prevents corruption in radiation-exposed chassis environments. |
Use Scenario: Deep buffer storage in enterprise switch ASIC memory subsystems. IC Role / Device Role / Timing Role: Pipelined SRAM co-located with traffic manager logic for header/payload separation. Use Value: Byte-write capability (BWa/BWb) enables efficient partial updates of packet metadata without full-word overwrites, reducing power and bus occupancy. |
| Baseband Processing Units | Radar Signal Processors |
|
Use Scenario: Real-time channel estimation and precoding buffer in 4G/LTE macro base stations. IC Role / Device Role / Timing Role: Low-latency shared memory between DSP cores and RF front-end controllers. Use Value: Synchronous self-timed writes eliminate external write-strobe generation, easing timing alignment with multi-core DSP clock domains. |
Use Scenario: Pulse-Doppler processing buffer in airborne AESA radar systems. IC Role / Device Role / Timing Role: Radiation-hardened SRAM for intermediate FFT result storage between processing stages. Use Value: On-chip SEC-DED ECC reduces uncorrectable error rate by >100× vs. standard SRAM under neutron flux, meeting DO-160E Section 22 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT 72V2115L15PF | 18-Mbit (512K × 36), 15 ns access, no ECC, 3.3 V I/O | Lacks on-chip ECC and 2.5 V compatibility; requires level shifters in 2.5 V systems | Select only if ECC is unnecessary and legacy 3.3 V infrastructure exists |
| ISSI IS61WV102436BLL-167TQLI | 36-Mbit (1M × 36), 167 MHz, no ECC, 2.5 V, but no JTAG or ZZ sleep | Missing boundary-scan testability and deep-sleep mode - limits use in field-upgradable telecom hardware | Prefer when cost sensitivity outweighs testability and power management needs |
Compared with IDT 72V2115L15PF and ISSI IS61WV102436BLL-167TQLI, CY7C1462KVE25-167BZI uniquely combines ECC, JTAG, ZZ sleep, and true ZBT™ compatibility in a single 2.5 V package - critical for carrier-class reliability and lifecycle support.
Availability
CY7C1462KVE25-167BZI is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, baseband processing units, and radar signal processors requiring stable component supply across extended product lifecycles.
Supply support for CY7C1462KVE25-167BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.
CY7C1462KVE25 belongs to the NoBL™ SRAM product line, engineered specifically for deterministic, zero-latency memory access in high-speed packet-processing and real-time signal-path applications.
FAQ
What is the function of the ADV/LD pin in CY7C1462KVE25-167BZI?
The ADV/LD pin controls the internal burst address counter: when HIGH and CEN is active, it advances the counter for sequential burst accesses; when LOW, it loads a new starting address from A[18:0]. This dual-mode operation enables both streaming transfers and random-access initiation without external address sequencing logic.
Does CY7C1462KVE25-167BZI support interleaved burst mode?
Yes - the device supports both linear and interleaved burst orders via MODE pin configuration. Interleaved mode maps to standard cache-line addressing used in PowerPC and older x86 processors, enabling drop-in replacement in legacy ZBT™-based systems without firmware changes.
How does the on-chip ECC operate with the DQP pins?
DQPa–DQPb carry parity bits generated by the on-chip ECC encoder during writes; during reads, the same pins deliver decoded parity for SEC-DED correction. The ECC engine processes full 36-bit words (18 data + 2 parity per segment), requiring no external syndrome calculation or correction logic.
Can CY7C1462KVE25-167BZI be used in place of a ZBT™ SRAM?
Yes - it is pin-compatible and functionally equivalent to ZBT™ devices (e.g., IDT 72V2113), supporting identical timing protocols, burst orders, and control signal behavior. No PCB or firmware modifications are needed for migration, provided 2.5 V supply and ECC handling are accommodated.
CY7C1462KVE25-167BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1462KVE25-167BZI FAQ
1.How can I place an order for CY7C1462KVE25-167BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1462KVE25-167BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1462KVE25-167BZI reliable?
The price and inventory of CY7C1462KVE25-167BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1462KVE25-167BZI is usually 5 days.
3.What payment methods are accepted for CY7C1462KVE25-167BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1462KVE25-167BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1462KVE25-167BZI?
CY7C1462KVE25-167BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1462KVE25-167BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1462KVE25-167BZI?
For technical support, including CY7C1462KVE25-167BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1462KVE25-167BZI requirements.
6.How does Aetrix verify that CY7C1462KVE25-167BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1462KVE25-167BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1462KVE25-167BZI meets industry standards.
7.What is the process for return or replacement of CY7C1462KVE25-167BZI?
All CY7C1462KVE25-167BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1462KVE25-167BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1462KVE25-167BZI part is unused and in its original packaging.
Return procedure for CY7C1462KVE25-167BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1462KVE25-167BZI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

