Infineon Technologies CY7C1462KVE33-167AXC
- Part No.:
- CY7C1462KVE33-167AXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1462KVE33-167AXC.pdf
- Description:
- IC SRAM 36MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:3,823
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1462KVE33 from Cypress Semiconductor is a 36-Mbit (2M × 18) synchronous pipelined SRAM with NoBL™ architecture, on-chip ECC, and 167 MHz operation. It delivers zero wait-state back-to-back read/write cycles, 3.3-V core/2.5-V I/O supply support, and JEDEC-standard 165-ball FBGA packaging. Used in high-throughput networking line cards for packet buffering with SER mitigation.
For engineers reviewing the CY7C1462KVE33 datasheet, CY7C1462KVE33 pinout, CY7C1462KVE33 application, or CY7C1462KVE33 equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write granularity (BWa–BWb only), ECC-enabled data integrity, and 167 MHz timing compliance in 2M × 18 mode.
Technical Context
This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and outputs are driven from output registers synchronized to CLK. The internal burst counter advances on ADV/LD HIGH, supporting linear or interleaved addressing per MODE strap.
Write operations are self-timed and synchronous-no external write pulse timing constraints-while OE remains asynchronous but masked during write data phases. ECC encoding/decoding occurs on-chip, correcting single-bit errors and detecting double-bit errors without CPU intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 organization) |
| Max Clock Frequency | 167 MHz - supports sustained 167 MT/s throughput with no wait states |
| Access Time | 3.4 ns - clock-to-output delay at 167 MHz, enabling tight timing closure |
| Supply Voltages | VDD = 3.3 V ± 0.3 V; VDDQ = 2.5 V ± 0.2 V - dual-rail I/O for compatibility with 2.5-V logic domains |
| ECC Support | On-chip SEC-DED - corrects single-bit errors and detects double-bit errors in real time |
| Burst Mode | Configurable linear or interleaved via MODE pin - matches processor/cache burst patterns |
| Byte Write Control | BWa and BWb only - enables independent 9-bit writes to DQa/DQb and DQPa/DQPb groups |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), JEDEC-standard, Pb-free, 13 mm × 15 mm footprint, 1.0 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:19] | Address Input | 20-bit synchronous address bus sampled on rising CLK edge; selects one of 2M locations in 2M × 18 mode |
| BWa, BWb | Byte Write Select | Active-low synchronous controls for 9-bit write segments: BWa → DQa/DQPa, BWb → DQb/DQPb |
| CLK, CEN | Clock & Enable | CLK qualified by CEN (active LOW); CEN deassertion extends previous cycle without deselection |
| CE1, CE2, CE3 | Chip Enable Group | Three-level synchronous enable: CE1/CE3 active LOW, CE2 active HIGH - enables bank isolation in multi-SRAM systems |
| DQa–DQb, DQPa–DQPb | Data I/O + Parity | 18-bit bidirectional data + 2-bit parity I/O; automatically tristated during write data phase regardless of OE state |
| MODE | Burst Configuration | Strap pin: HIGH = interleaved burst, LOW = linear burst; must be stable during operation |
| ADV/LD | Burst Counter Control | HIGH advances internal burst counter; LOW loads new address - enables seamless burst/non-burst transitions |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ Architecture | Enables true back-to-back read/write with no turnaround cycles - eliminates pipeline stalls in burst-intensive traffic |
| Synchronous Self-Timed Writes | Removes external write-pulse timing constraints - simplifies timing budget and PCB layout |
| On-Chip SEC-DED ECC | Reduces soft error-induced system crashes in radiation-prone environments (e.g., telecom base stations) |
| Configurable Burst Order | Linear or interleaved via MODE pin - aligns with MIPS, PowerPC, or custom ASIC burst requirements |
| 3.3-V Core / 2.5-V I/O Separation | Allows direct interfacing with 2.5-V FPGAs or processors while maintaining 3.3-V memory stability |
Applications
| Telecom Line Card Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length packets in OC-192/STM-64 line interface units. IC Role / Device Role / Timing Role: Primary packet buffer SRAM with deterministic 167 MHz access and ECC protection against cosmic-ray-induced bit flips. Use Value: Enables >99.999% uptime by preventing uncorrectable memory errors in carrier-grade infrastructure. | Use Scenario: Capturing high-speed digital waveforms from 1+ GSPS ADCs in automated test systems. IC Role / Device Role / Timing Role: High-bandwidth, low-latency capture memory with pipelined reads/writes synchronized to system clock. Use Value: Sustains 167 MT/s continuous streaming without FIFO overflow or timing violations. |
| Avionics Data Recorder | Industrial PLC Motion Control Buffer |
Use Scenario: Recording flight-critical sensor telemetry with tamper-proof integrity verification. IC Role / Device Role / Timing Role: ECC-protected SRAM storing timestamped sensor frames before encryption and storage. Use Value: Guarantees single-bit error correction and double-bit error detection per 18-bit word - meeting DO-254 Level A requirements. | Use Scenario: Holding interpolated motion profiles and real-time axis position updates in multi-axis CNC controllers. IC Role / Device Role / Timing Role: Low-latency, deterministic-access buffer synchronizing servo loop updates across 4+ axes. Use Value: Eliminates jitter in position command delivery by removing wait states between read-modify-write sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204818BLL-167BLI | No on-chip ECC; 2M × 18, 167 MHz, 3.3-V core/2.5-V I/O; 165-ball FBGA | Lacks SEC-DED capability - requires external error handling or higher-reliability system-level redundancy | Select when ECC is managed externally and cost sensitivity outweighs SER risk. |
| MT48LC32M16A2P-6A:G | SDR SDRAM (not SRAM); 512 Mbit, 16-bit, 166 MHz; different timing model and refresh requirement | Requires periodic refresh, lacks true zero-wait-state pipelining, incompatible burst protocol | Select only if system already uses SDRAM controller and latency tolerance allows refresh overhead. |
Compared with IS61WV204818BLL-167BLI and MT48LC32M16A2P-6A:G, the CY7C1462KVE33 uniquely combines 167 MHz NoBL™ throughput, on-die SEC-DED ECC, and synchronous self-timed writes - making it irreplaceable where deterministic latency and radiation-hardened reliability are co-required.
Availability
CY7C1462KVE33 is available at Aetrix Electronics and suitable for telecom line card buffering, avionics data recorders, and industrial PLC motion control buffers requiring stable component supply across extended production lifecycles.
Supply support for CY7C1462KVE33 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for mission-critical embedded systems.
The CY7C146x family targets high-speed, zero-latency buffering in networking, test equipment, and aerospace applications where deterministic timing and data integrity are non-negotiable.
FAQ
What is the function of the MODE pin on CY7C1462KVE33?
The MODE pin configures burst address sequencing: pulled HIGH (or left floating) selects interleaved burst order; pulled LOW selects linear burst order. It must remain static during device operation and is sampled only at power-up or reset. This setting directly determines how consecutive addresses increment during burst accesses, aligning with host processor expectations.
Does CY7C1462KVE33 support 1M × 36 organization?
No. CY7C1462KVE33 is exclusively a 2M × 18 device. The "1M × 36" configuration is supported only by CY7C1460KV33 and CY7C1460KVE33 variants. Pinout, byte-write signal count (BWs), and internal address decoding differ - CY7C1462KVE33 has only BWa and BWb, not BWc/BWd, confirming its 2M × 18 identity.
How does the on-chip ECC operate during read cycles?
During every read, the ECC decoder checks the associated parity bits (DQPa–DQPb). If a single-bit error is detected in the 18-bit data word, it is corrected transparently before output register latching; the corrected data appears at DQa–DQb on the next clock edge. A double-bit error triggers an uncorrectable error flag (not exposed externally), and uncorrected data is output - system-level error reporting must be implemented separately.
Can CE2 be used as an active-LOW enable like CE1 and CE3?
No. CE2 is defined as active HIGH per the datasheet pin definition and truth table. Using it as active LOW violates timing and functional specifications. Correct bank selection requires CE1 and CE3 asserted LOW while CE2 is asserted HIGH - this three-signal combination ensures proper device enable/disable behavior and avoids partial selection glitches.
CY7C1462KVE33-167AXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 167 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.4 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1462KVE33-167AXC FAQ
1.How can I place an order for CY7C1462KVE33-167AXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1462KVE33-167AXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1462KVE33-167AXC reliable?
The price and inventory of CY7C1462KVE33-167AXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1462KVE33-167AXC is usually 5 days.
3.What payment methods are accepted for CY7C1462KVE33-167AXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1462KVE33-167AXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1462KVE33-167AXC?
CY7C1462KVE33-167AXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1462KVE33-167AXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1462KVE33-167AXC?
For technical support, including CY7C1462KVE33-167AXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1462KVE33-167AXC requirements.
6.How does Aetrix verify that CY7C1462KVE33-167AXC is sourced from the original manufacturer or authorized distributors?
All CY7C1462KVE33-167AXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1462KVE33-167AXC meets industry standards.
7.What is the process for return or replacement of CY7C1462KVE33-167AXC?
All CY7C1462KVE33-167AXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1462KVE33-167AXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1462KVE33-167AXC part is unused and in its original packaging.
Return procedure for CY7C1462KVE33-167AXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1462KVE33-167AXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

