Infineon Technologies CY7C1463KV33-133AXC

Overview

CY7C1463KV33-133AXC from Cypress Semiconductor is a 36-Mbit (2M × 18) synchronous flow-through SRAM with NoBL™ architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It supports true back-to-back read/write operations at 133 MHz with zero wait states, delivers 6.5 ns clock-to-output delay, and features registered inputs, byte write capability, and three chip enables for depth expansion.

For engineers reviewing the CY7C1463KV33-133AXC datasheet, CY7C1463KV33-133AXC pinout, CY7C1463KV33-133AXC application, or CY7C1463KV33-133AXC equivalent, key selection criteria include burst mode control (linear/interleaved), synchronous self-timed writes, ZZ sleep mode power management, and JEDEC-standard 100-pin TQFP compatibility with ZBT™-equivalent timing behavior.

Technical Context

The device implements a synchronous flow-through architecture where all inputs-including address, WE, BWx, CE1–CE3, ADV/LD, and CEN-are registered on the rising edge of CLK. Its NoBL™ logic eliminates dead cycles between consecutive read and write operations by enabling data transfer on every clock cycle without pipeline stalls.

Burst addressing is controlled by MODE (linear vs. interleaved), A0/A1, and ADV/LD; internal burst counter advances on ADV/LD HIGH, while new addresses load on ADV/LD LOW. Output drivers are synchronously tri-stated during write data capture, independent of OE state, preventing bus contention in high-speed systems.

Key Specifications

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), JEDEC-standard Pb-free, 14 mm × 14 mm body, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PFI and IS61WV102432BLL-133TQLI, CY7C1463KV33-133AXC uniquely delivers guaranteed zero-wait-state throughput, integrated burst sequencing, and autonomous power management - making it optimal for latency-constrained, high-dynamic-range memory subsystems.

Availability

CY7C1463KV33-133AXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processor cache, and radar signal processing applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1463KV33-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1463KV33 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking and telecom infrastructure where latency predictability and burst efficiency are critical.

FAQ

What is the difference between CY7C1461KV33 and CY7C1463KV33?

CY7C1461KV33 is configured as 1M × 36 (36-bit data bus), while CY7C1463KV33 is configured as 2M × 18 (18-bit data bus with 4-bit parity). Both share identical timing, pinout, and feature set, but differ in memory organization and DQ/DQP pin allocation-verified in Figures 1 and 2 of datasheet 001-66681 Rev. *G.

Does CY7C1463KV33-133AXC require an external clock buffer?

No. The device accepts a clean 133 MHz single-ended CMOS clock directly on the CLK pin. Input setup/hold times (tDS/tDH = 2.0 ns min) are met using standard FPGA or ASIC clock outputs; no external buffering is needed if board-level jitter remains below 150 ps RMS.

How is burst order selected, and can it be changed dynamically?

Burst order is selected statically via the MODE pin: tied to GND for linear, VDD or floating for interleaved. It cannot be changed dynamically during operation-the pin is sampled only at power-up reset and is not re-evaluated during runtime.

What happens to data integrity during ZZ sleep mode?

Data integrity is fully preserved in ZZ mode: the SRAM retains all stored contents with ≤ 50 µA ICCZ current draw. The device exits ZZ mode synchronously on ZZ deassertion (LOW) and resumes normal operation after tZZEX = 20 ns, with no initialization delay or data loss.