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Infineon Technologies CY7C1470BV25-167BZCT

Part No.:
CY7C1470BV25-167BZCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1470BV25-167BZCT.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,028

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Product details

Overview

CY7C1470BV25-167BZCT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with No Bus Latency™ (NoBL™) architecture, designed for high-throughput memory buffering in network packet processors and telecom line cards. It operates at 167 MHz with 3.4 ns clock-to-output delay, supports zero-wait-state back-to-back read/write operations, and uses single 2.5V VDD with separate 2.5V VDDQ I/O supply.

For engineers reviewing the CY7C1470BV25-167BZCT datasheet, CY7C1470BV25-167BZCT pinout, CY7C1470BV25-167BZCT application, or CY7C1470BV25-167BZCT equivalent, this device delivers deterministic pipelined timing, byte-write granularity via four BW inputs, JTAG boundary-scan testability, and JEDEC-standard 100-pin TQFP packaging for board-level signal integrity in burst-mode data path systems.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. The internal NoBL logic eliminates bus latency by enabling consecutive read/write cycles without inter-cycle gaps.

Burst operation is controlled by ADV/LD and MODE pins-linear or interleaved burst order is selected at power-up-and self-timed write circuitry ensures consistent write completion independent of system timing margins. Three chip enables (CE1 active-low, CE2 active-high, CE3 active-low) provide flexible bank selection in multi-SRAM configurations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 organization), enabling 9 MB of fast buffer storage per device
Max Clock Frequency 167 MHz - defines maximum sustained transaction rate of 167 million operations/second
tCO (Clock-to-Output) 3.4 ns - guarantees data valid at DQ outputs within 3.4 ns after CLK rise, critical for tight setup timing
VDD / VDDQ 2.5V ±0.2V - dual-supply architecture isolates core logic (VDD) from I/O drivers (VDDQ) to reduce noise coupling
Byte Write Control 4 independent BWa–BWd inputs - allows selective 9-bit writes to each DQa–DQd byte lane without masking overhead
Power Dissipation 400 mA max operating current - sets thermal design margin for continuous 167 MHz operation in compact PCB layouts
Package 100-pin TQFP (14 × 14 mm, 0.5 mm pitch) - supports standard reflow assembly and provides 36 bidirectional DQ lines + parity

Pinout & Package

Package: 100-pin Thin Quad Flat Package (TQFP), RoHS-compliant, body size 14 mm × 14 mm, lead pitch 0.5 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Synchronous Address Input Latched on rising CLK edge; selects one of 2M addresses in 2M × 36 configuration
BWa–BWd Byte Write Select (Active Low) Each controls 9-bit data lane (DQa/DQPa through DQd/DQPd); enables partial-word writes without read-modify-write
CLK Primary Synchronous Clock Input Qualified by CEN; all register transfers and memory access timing referenced to its rising edge
CEN Clock Enable (Active Low) Suspends clock recognition without deselecting device-extends previous cycle for timing margin or power gating
CE1, CE2, CE3 Chip Enable Inputs Three-input decode (CE1↓, CE2↑, CE3↓) enables depth expansion across multiple SRAMs with shared address/data buses
DQa–DQd, DQPa–DQPd Bidirectional Data I/O (36 + 4 parity) Registered outputs driven synchronously; tri-stated automatically during write data phase to prevent bus contention
OE Asynchronous Output Enable Tri-states outputs when HIGH; masked during write sequences and first clock after deselect to ensure clean bus transitions
ADV/LD Advance/Load Control LOW loads new address; HIGH advances internal burst counter-enables linear/interleaved 4-word bursts from single address
MODE Burst Order Strap Pulled HIGH = interleaved burst; pulled LOW = linear burst; must remain static during operation
ZZ Deep Sleep Mode (Active Low) Reduces standby current to <100 µA by disabling internal clocks and array bias-used for dynamic power management

Key Features

Feature Design Value
NoBL™ Pipelined Architecture Enables true back-to-back reads/writes with no wait states-eliminates pipeline stalls in high-bandwidth packet buffering
Self-Timed Synchronous Writes On-chip write timing control removes external write-pulse width constraints and simplifies controller design
JTAG Boundary Scan (IEEE 1149.1) Supports IEEE-compliant board-level test and interconnect verification without requiring additional test pads
Separate VDDQ Supply Isolates I/O drivers from core logic voltage domain-reduces switching noise coupling into sensitive analog or PLL sections
Programmable Burst Order Linear or interleaved 4-word burst via MODE pin-matches legacy ZBT or modern cache-line access patterns

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in ingress/egress queues before forwarding or processing.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer between MAC layer and traffic manager ASIC, operating at line-rate speeds.

Use Value: 167 MHz clock rate and 3.4 ns tCO enable sub-6 ns read turnaround-critical for maintaining 10 Gbps+ throughput with minimal jitter.

Use Scenario: Frame assembly/disassembly and header modification in OC-192/STM-64 line interface units.

IC Role / Device Role / Timing Role: Dual-port accessible memory for parallel read/write operations during cell/packet reordering and QoS tagging.

Use Value: Byte-write capability (BWa–BWd) allows precise 9-bit field updates in ATM cell headers without full-word rewrite overhead.

Baseband Processing Buffer Radar Signal Processing FIFO

Use Scenario: Temporary storage of decoded channel symbols and soft metrics in LTE/5G baseband processors before turbo decoding.

IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly with DSP DMA engines using ADV/LD-controlled linear bursts.

Use Value: Interleaved burst mode (via MODE pin) aligns with FFT/IFFT memory access patterns-reducing external address generation logic.

Use Scenario: Real-time buffering of digitized RF samples between ADC and FPGA-based pulse compression engines.

IC Role / Device Role / Timing Role: Deterministic-latency FIFO supporting continuous 167 MSPS sample streaming with zero dropped cycles.

Use Value: ZZ sleep mode reduces idle power to <100 µA-extending operational time in battery-backed radar subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1470BV25-250BZCT Higher speed grade: 250 MHz, 3.0 ns tCO vs. 167 MHz / 3.4 ns Requires tighter PCB layout and stricter VDD/VDDQ decoupling; suitable only where >200 MHz bandwidth is mandatory Select when system clock exceeds 200 MHz and timing margin is constrained by tCO
IS61WV102436BLL-167TQLI Same density/speed but uses single 3.3V supply; no VDDQ separation or JTAG support Lacks VDDQ isolation and boundary scan-less suitable for mixed-signal SoC interfaces or production testability requirements Choose for cost-sensitive industrial controllers where 3.3V compatibility and test simplicity outweigh noise immunity needs

Compared with CY7C1470BV25-167BZCT, the -250BZCT variant trades higher power (450 mA vs. 400 mA) for 17% faster throughput, while the IS61WV102436BLL offers lower BOM cost at the expense of I/O noise resilience and JTAG diagnostics capability.

Availability

CY7C1470BV25-167BZCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and radar signal processing FIFOs requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-167BZCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, automotive, and industrial systems, with emphasis on signal integrity and real-time determinism.

CY7C1470BV25 belongs to the NoBL™ SRAM product line, engineered specifically for zero-wait-state burst-mode data buffering in high-speed digital signal paths where pipeline efficiency and timing predictability are non-negotiable.

FAQ

What is the function of the MODE pin, and how does it affect burst behavior?

The MODE pin selects burst order: pulled HIGH enables interleaved burst (e.g., 0,2,1,3), pulled LOW enables linear burst (0,1,2,3). It must be set at power-up and held static during operation. Floating defaults to HIGH, so default behavior is interleaved-matching ZBT-compatible systems without external strapping.

Can CY7C1470BV25-167BZCT operate with only VDD applied, or is VDDQ mandatory?

VDDQ is mandatory. The device requires both 2.5V VDD (core logic) and 2.5V VDDQ (I/O drivers) to function. Omitting VDDQ leaves DQ/DQP pins unpowered and causes undefined output states, bus contention, or latch-up risk. Both supplies must be ramped monotonically during power-up.

How does the ZZ (Sleep) mode interact with ongoing read/write operations?

Asserting ZZ LOW while an operation is in progress completes the current cycle before entering deep sleep. No new accesses are accepted, and internal clocks halt. Outputs go high-impedance after the final data transfer. Exiting ZZ requires releasing ZZ and waiting tZZH (100 ns min) before re-enabling CEN/CLK.

Is the 100-pin TQFP package of CY7C1470BV25-167BZCT pin-compatible with CY7C1472BV25 or CY7C1474BV25?

No. Although all three share NoBL architecture and functional equivalence, CY7C1470BV25 uses 100-pin TQFP for 2M×36, while CY7C1472BV25 (4M×18) and CY7C1474BV25 (1M×72) use 165-ball and 209-ball FBGA packages respectively-different pin counts, layouts, and signal allocations preclude physical compatibility.

CY7C1470BV25-167BZCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
NoBL™
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.4 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1470BV25-167BZCT FAQ

1.How can I place an order for CY7C1470BV25-167BZCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1470BV25-167BZCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1470BV25-167BZCT reliable?

The price and inventory of CY7C1470BV25-167BZCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1470BV25-167BZCT is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1470BV25-167BZCT transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C1470BV25-167BZCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1470BV25-167BZCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1470BV25-167BZCT?

For technical support, including CY7C1470BV25-167BZCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1470BV25-167BZCT requirements.

6.How does Aetrix verify that CY7C1470BV25-167BZCT is sourced from the original manufacturer or authorized distributors?

All CY7C1470BV25-167BZCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1470BV25-167BZCT meets industry standards.

7.What is the process for return or replacement of CY7C1470BV25-167BZCT?

All CY7C1470BV25-167BZCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1470BV25-167BZCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1470BV25-167BZCT part is unused and in its original packaging.

Return procedure for CY7C1470BV25-167BZCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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