Infineon Technologies CY7C1470BV25-167BZIT

Overview

CY7C1470BV25-167BZIT from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom line cards. It operates at 167 MHz with 3.4 ns maximum access time, supports zero-wait-state back-to-back read/write operations, features byte-write capability via four BW pins (BWa–BWd), and uses a single 2.5V core supply with separate 2.5V I/O supply (VDDQ).

For engineers reviewing the CY7C1470BV25-167BZIT datasheet, CY7C1470BV25-167BZIT pinout, CY7C1470BV25-167BZIT application, or CY7C1470BV25-167BZIT equivalent, key selection criteria include burst order configuration (linear/interleaved via MODE pin), synchronous self-timed write timing, JTAG boundary-scan support, and compatibility with ZBT™-based memory controllers requiring low-latency pipelined access.

Technical Context

This SRAM implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs are registered to that same edge. The internal NoBL™ logic eliminates bus latency by enabling true consecutive read/write cycles without wait states, using an on-chip burst counter controlled by ADV/LD and MODE.

It supports two burst orders (linear or interleaved), synchronous self-timed writes qualified by WE and BW signals, and tri-state output control via asynchronous OE-masked during write data phases. Three synchronous chip enables (CE1 active-low, CE2 active-high, CE3 active-low) enable flexible bank decoding, while CEN suspends clock recognition without deselecting the device.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 14 mm, 0.5 mm pitch), Pb-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-250BZI, this 167 MHz variant trades peak bandwidth for lower power (400 mA max vs. 450 mA) and relaxed signal integrity demands; versus IDT72V2115L15PF, it delivers true NoBL™ zero-wait-state operation but requires ZBT-compatible controller firmware.

Availability

CY7C1470BV25-167BZIT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and industrial real-time controller memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1470BV25-167BZIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for applications demanding deterministic, zero-wait-state memory access in high-speed packet-processing and real-time control subsystems.

FAQ

What is the function of the MODE pin on CY7C1470BV25-167BZIT?

The MODE pin configures the on-chip burst counter's sequence: pulled HIGH (or left floating) selects interleaved burst order, while pulled LOW selects linear burst order. It must remain static during device operation and is sampled only at power-up or reset. This setting directly determines how successive burst addresses increment, aligning with either legacy ZBT or modern cache-line access expectations.

How does the ADV/LD pin affect address loading in burst versus single-access modes?

When ADV/LD is LOW at the rising edge of CLK (with CEN active), the current A[18:0] value is loaded into the address register for the next access. When ADV/LD is HIGH, the internal burst counter increments the address for subsequent burst reads/writes. After any deselection event, ADV/LD must be driven LOW once to reload a new base address before restarting burst mode.

Can CY7C1470BV25-167BZIT operate with only two chip enables asserted?

No. All three chip enables-CE1 (active-low), CE2 (active-high), and CE3 (active-low)-must be simultaneously asserted at the rising edge of CLK to initiate any access. This triple-enable scheme prevents partial selection and ensures robust bank isolation in multi-SRAM systems; asserting only two CE signals leaves the device deselected and non-responsive.

Is VDDQ required to be powered even during standby or sleep mode?

Yes. VDDQ must remain at 2.5 V whenever VDD is powered, including in ZZ Sleep Mode. The I/O buffers retain their electrical characteristics and JTAG functionality only when VDDQ is active. Removing VDDQ while VDD is present may cause undefined I/O states and violate absolute maximum ratings, risking latch-up or data corruption on powered-down buses.