Infineon Technologies CY7C1470BV25-200AXC

Overview

CY7C1470BV25-200AXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in networking and telecom ASIC/FPGA interfaces. It operates at 200 MHz with zero wait states, supports 2.5 V core and I/O supply, features fully registered inputs/outputs, and delivers 3.0 ns clock-to-output delay. Used in packet buffering and cache coherency circuits where back-to-back read/write transitions are critical.

For engineers reviewing the CY7C1470BV25-200AXC datasheet, CY7C1470BV25-200AXC pinout, CY7C1470BV25-200AXC application, or CY7C1470BV25-200AXC equivalent, key selection criteria include burst order configuration (linear/interleaved), byte write granularity (four 9-bit groups), synchronous self-timed write control, JTAG boundary scan support, and TQFP/FBGA package compatibility for board-level timing closure.

Technical Context

This SRAM implements a fully synchronous, pipelined architecture with all inputs and outputs registered to the rising edge of CLK, qualified by CEN. Internal address latching, burst counter advancement (via ADV/LD), and on-chip self-timed write logic eliminate external timing constraints for consecutive operations.

Burst capability supports both linear and interleaved orders via MODE pin strap; byte write control uses four independent BWa–BWd signals active-low, each enabling 9-bit data/parity pairs (DQa/DQPa through DQd/DQPd). OE is asynchronous but masked during write data cycles to prevent bus contention.

Key Specifications

Pinout & Package

Available in JEDEC-standard Pb-free 100-pin TQFP (14 × 20 × 1.4 mm) and 165-ball FBGA (15 × 17 × 1.4 mm) packages. Pin functions validated per Cypress Document 001-15032 Rev. *O.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with CY7C1470BV25-200AXC, the -250AXC offers higher throughput at identical voltage and pin compatibility, while the AS7C3256B-20TIN lacks pipelining, burst, and JTAG - making it unsuitable for high-speed data path replacement without architectural redesign.

Availability

CY7C1470BV25-200AXC is available at Aetrix Electronics and suitable for packet buffering in network switches, cache coherency directory storage in multi-core processors, and FPGA-based protocol acceleration requiring stable component supply across production lifecycles.

Supply support for CY7C1470BV25-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip solutions, memory, and USB-C/USB-PD controllers.

CY7C1470BV25 belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory interfacing in ASIC, FPGA, and network processor subsystems.

FAQ

What is the function of the MODE pin on CY7C1470BV25-200AXC?

The MODE pin is a static strap input that configures burst address order: pulled HIGH (or left floating) selects interleaved burst mode; pulled LOW selects linear burst mode. It must be held stable during device operation, as dynamic switching causes undefined address sequencing and potential data corruption during burst accesses.

Can CY7C1470BV25-200AXC operate with only two Chip Enables asserted?

No. All three Chip Enables (CE1 active-low, CE2 active-high, CE3 active-low) must be simultaneously asserted at the rising edge of CLK to initiate any access. Partial enable assertion results in deselection - the device ignores address, data, and control inputs and places outputs in high-impedance state.

How does the device handle byte write operations during a burst write sequence?

Each BWa–BWd signal independently enables its associated 9-bit data/parity group (e.g., BWa controls DQa/DQPa) during every clock cycle of the burst. The write is qualified by WE and occurs synchronously on the rising CLK edge; no external write pulse width control is needed due to on-chip self-timed write circuitry.

Is the ZZ Sleep Mode supported in the CY7C1470BV25-200AXC variant?

Yes. The ZZ pin provides asynchronous deep-sleep control: driving ZZ LOW reduces standby current to ≤120 mA while retaining data. This mode is independent of CEN and CLK, and exit latency is specified as ≤20 ns - enabling rapid wake-up for burst-oriented traffic patterns in power-constrained line cards.